MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .. .. . EMITTER BALLASTED VSWR CAPABILITY :1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC PACKAGE POUT = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC82003 BRANDING 82003 PIN CONNECTION DESCRIPTION The MSC82003 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82003 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Value Unit Power Dissipation* 21.8 W Device Current* 600 mA Collector-Supply Voltage* 35 V TJ Junction Temperature 200 C TSTG Storage Temperature - 65 to +200 C 8.0 C/W PDISS IC VCC Parameter THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation October 1992 1/5 MSC82003 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 1mA IE = 0mA 45 -- -- V BVEBO IE = 1mA IC = 0mA 3.5 -- -- V BVCER IC = 5mA RBE = 10 45 -- -- V ICBO VCB = 28V -- -- 1.0 mA hFE VCE = 5V 15 -- 120 -- IC = 200mA DYNAMIC Symbol Value Test Conditions Min. Typ. Max. POUT c f = 2.0 GHz PIN = 0.5 W VCC = 28 V 3.0 3.3 -- W f = 2.0 GHz PIN = 0.5 W VCC = 28 V 35 37 -- % GP f = 2.0 GHz PIN = 0.5 W VCC = 28 V 7.8 8.2 -- dB COB f = 1 MHz VCB = 28 V -- -- 6.5 pF TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY COLLECTOR EFFICIENCY vs FREQUENCY RELATIVE POWER OUTPUT vs COLLECTOR VOLTAGE 2/5 Unit MSC82003 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 0.5 W VCC = 28 V Normalized to 50 ohms FREQ. ZIN () ZCL () 1.0 GHz 4.4 + j 5.5 9.6 + j 16.0 1.5 GHz 4.5 + j 9.0 4.3 + j 7.0 1.7 GHz 4.5 + j 10.5 3.5 + j 4.0 2.0 GHz 4.6 + j 12.5 3.0 + j 1.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL POUT = Saturated VCC = 28 V Normalized to 50 ohms 3/5 MSC82003 TEST CIRCUIT Ref.: Dwg. No. C125518 All dimensions are in inches. Frequency 2.0 GHz RF Amplifier Power Output Test PACKAGE MECHANICAL DATA 4/5 MSC82003 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5