October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermet ica lly se aled
.EMITTER BALLASTED
.VSWR CAPABILITY ∞:1 @ RATED
CONDITIONS
.REFRACTORY/GOLD METALLIZATION
.HERMETIC STRIPAC PACKAGE
.POUT = 3.0 W MIN. WITH 7.8 dB GAIN
@ 2.0 GHz
DESCRIPTION
The MSC82003 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase ang le und er rat ed rated condi ti ons . The
MSC82003 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
PIN CONNECTION
BRANDING
82003
OR DER COD E
MSC82003
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* 21 .8 W
ICDevice Current* 60 0 mA
VCC Collector-Supply Voltage* 35 V
TJJunction Temperature 20 0 °C
TSTG Storage Temperature − 65 to +200 °C
RTH(j-c) Junction-Case Thermal Resistance* 8. 0 °C/W
*Applies only to rated RF amplifier operation
MSC82003
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symb ol Test C ond iti ons Value Unit
Min. Typ. Max.
POUT f = 2.0 GHz PIN = 0.5 W VCC = 28 V 3.0 3.3 — W
ηcf = 2.0 GHz PIN = 0.5 W VCC = 28 V 35 37 — %
GPf = 2.0 GHz PIN = 0.5 W VCC = 28 V 7.8 8.2 — dB
COB f = 1 MHz VCB = 28 V — — 6.5 pF
STATIC
Symbol Test Co nditions Value Unit
Min. Typ. Max.
BVCBO IC = 1mA IE = 0mA 45 — — V
BVEBO IE = 1mA IC = 0mA 3.5 — — V
BVCER IC = 5mA RBE = 10Ω45 — — V
ICBO VCB = 28V — — 1.0 mA
hFE VCE = 5V IC = 200mA 15 — 120 —
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs FREQUENCY COLLECTOR EFFICIENCY vs
FREQUENCY
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
MSC82003
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TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
PIN = 0.5 W
VCC = 28 V
Normalized to 50 ohms
POUT = Saturate d
VCC = 28 V
Normalized to 50 ohms
IMPEDANCE DATA
ZIN
ZCL
FREQ. ZIN (Ω)Z
CL (Ω)
1.0 GHz 4.4 + j 5.5 9.6 + j 16.0
1.5 GHz 4.5 + j 9.0 4.3 + j 7.0
1.7 GHz 4.5 + j 10.5 3.5 + j 4.0
2.0 GHz 4.6 + j 12.5 3.0 + j 1.0
MSC82003
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PACKAGE MECHANICAL DATA
Ref.: Dwg. No. C125518
All dimensions are in inches.
Frequency 2.0 GHz
RF Amplifier Power Output Test
TEST CIRCUIT
MSC82003
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MSC82003
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