, 4 Ordering number : EN12520_ No.1252c |] 28C3184 NPN Triple Diffused Planar Silicon Transistor 800V/0.5A Switching Regulator Applications Features , : - High breakdown voltage (Vcgo 2900V). - Fast switching speed. - Wide ASO. Absolute Maximum Ratings at Ta=25C unit Collector-to-Base Voltage Vcgo 900 Vv Collector-to-Emitter Voltage Voro 800 Vv Emitter-to-Base Voltage VERO 7 Vv Collector Current Ic 0.5 A Collector Current (Pulse) Icp PW 3300yps,duty cycle 510% 2 A Collector Dissipation Pe Tce=25C , 30 WwW Junction Temperature Tj - 150 C Storage Temperature Tstg ~55 to +150 c Electrical Characteristics at Ta = 25C min typ max unit Collector Cutoff Current Icno Vcop=800V Ig =0 10 =wvA Emitter Cutoff Current Ippo Vep=5V,Ic=0 10 =owA DC Current Gain hrg(1) Vor =5V,I=60mA 10K 402K hrg(2) Veg =5V,I=300mA : 8 C-E Saturation Voltage Vertat) %Ic=300mA,Ip=60mA 2 Vv Gain-Bandwidth Product fp Voge=10V,Ic=60mA 15 MHz Output Capacitance Cob Vcp=10V, f=1MHz 20 pF C-B Breakdown Voltage Vieaicspo Ic=1mA,m=0 900 Vv C-E Breakdown Voltage Vericeo Ic=1mA,Rpp= 800 Vv C-E Sustain Time Verous) I=0.5A,1g=0.1A,L=5mH 800 v Voexisus) I=0.5A,Ig7=0.1A,Ipo= 0.1A 900 V . L=5mH,clamped Turn-ON Time ton Ic =400mA, Ip] =80mA, 1.0 us Ipe=160mA Storage Time tstg I=400mA, Ip; =80mA, 3.0 ps _Ipe=160mA Fall Time te I=400mA, Ip) =80mA, 10 us Ipo= 160mA *%% : For the hpg(1) of the 25C3184, specify two ranks or more in principle. 10 K 20 15 L 30 | | | Package Dimensions 2010C 20 M 40 (unit : mm) Ls 15.1-+f- 14.0 a a 2.7 TT a i 1 1: Base tet = 2: Collector t L0.4 3: Emitter JEDEC: TO-220AB EIAJ : SC-46 1.3 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 90595MO (KOTO), 5137KU/0183KI/TSJII 8-6008, 8-5082 No.1252-1/3 73 me7o9707b OOe20073 58T WHF UMHIL YE -2$C3184 5 Switching Time Test Circuit / OUTPUT 400V le Vce 250 200 ~y we nt, Collector Current, Ig 8 Collector Curre w 0 10 2 4 6 8 Collector-to-Emitter Voltage,Vcoz V Ic ~ V S a Vcr=5V A so 8 we . we 2 Ly DC Current Gain, hyp Collector Current, Ip 2 _ 1.2 0.8 Base-to-Emitter Voltage, Vpz V Ic 0 0 0.2 0.4 0.6 1.0 Vv _- o Ic/Ip=5 Saturation Voltage, Vonuay ~ V Collector-to-Emitter 0.001 0.01 0.1 Collector Current, Ip - A - Base-to-Emitter Saturation Voltage, Varyeay) > V ~ 0 I 8 10 2 6 Collector-to-Emitter Voltage,Vcop V h . Ic Vv 5V 0.01 0. Collector Current, Ip VBE(sat) Ic ] A 0.001 0.01 0.1 Collector Current, Ip A 74 ' mm 7997076 OOe0074 616 me 28C3 184 SWTime | Forward Bias AS O 101 Switching Time,SW Time ps Veco =400V Rload I=5lp, = 2.5Ip9 1 < | ? 1 a co 5 0.1 8 Bo Pa Ss 3 oS 0.1 . 0.01 pulse 0.01 0.1 1 10 100 1000 Collector Current, Ip, A Collector-to-Emitter Voltage,Vop V R BiasASO 32 Po - Te < = | I ? a 3 8 5 & 5 g & = go! : 3 So a 2 =5lgi = 5Ipe -lIpo= >0. 001 [= 1e2= 100mA (I> 0.5) 100 1000 Collector-to-Emitter Voltage, Vcp V Case Temperature,Tc C me 7d?7o7b OO2007s 752