HN2D03F
2004-03-01
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TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D03F
High Speed Switching Application
Small package
Low forward voltage : VF (2) = 0.94V (typ.)
Small total capacitance : CT = 2.5pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 420 V
Reverse voltage VR 400 V
Maximum (peak) forward current IFM 300* mA
Average forward current IO 100* mA
Surge current (10ms) IFSM 2* A
Power dissipation P 300** mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55~150 °C
*: Maximum Ratings per each one of Q1,Q2 or Q3. In case of
simultaneous use, the Maximum Ratings per diode shall be derated to
75%.
** :Total rating
Electrical Characteristics (Q1, Q2, Q3, Common, Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) ― I
F = 10mA ― 0.8 ―
Forward voltage
VF (2) ― I
F = 100mA ― 1.0 1.3
V
IR (1) ― VR = 300V ― ― 0.1
Reverse current
IR (2) ― V
R = 400V ― ― 1.0
µA
Total capacitance CT ― V
R = 0, f = 1MHz ― 2.5 5.0 pF
Reverse recovery time trr ― IF = 10mA (fig.1) ― 0.5 ― us
1.CATHODE(C1)
2.CATHODE(C2)
3.CATHODE(C3)
4.ANODE (A3)
5.ANODE (A2)
6.ANODE (A1)
JEDEC ―
JEITA ―
TOSHIBA 1-3K1C
Weight: 0.015mg(typ.)
Unit in mm
HN2D03F
2004-03-01
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Pin Assignment (Top View) Marking
Fi g .1 Re v ers e R eco very Tim e (trr) Test Circuit
10ns
A7
4 5 6
1 2 3
Q1 Q2
Q3
HN2D03F
2004-03-01
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AMBIENT TEMPERATURE Ta (°C)
PC* – Ta
COLLECTOR POWERDISSPATION
PC (mW)
0
0
100
300
200
500
400
150100 125 50 75
25 175
*Total Rating.
HN2D03F
2004-03-01
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• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and
sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
