376 9007 8-input NAND Gate Schottky TTL High-Speed TTL Low-Power Schotitky TTL Standard TTL Low-Power TTL Device Type wee Device Type Te lmic A Device Type elon Device Type ape Device Type ae Tt SN29007 JONo FARCAILD nowt pol [Fi MOTOROLA NSC. PHILIPS SIGNETICS SIEMENS FUJITSU HITACHI MITSUBISHI NEC TOSHIBA Electrical Characteristics SN29007 absolute maximum ratings over operating free-air temperature range (Top View) Pin Assignment iP 2f{sf 4 Fs A 2B c D NC NC GND positive logic: Y =ABCDEFGH NC No interna! connection Veltage values, except interemitter voltage, are with respect to network ground Supply voltage. Voc av Operating tree-air o'c to 75C (see Notes | and 2) temperature range {nput voltage 5.5V | Storage temperature range -65C to 150C Interemitter voltage (see Note 3) .5V_ | Steady-state input current range -- 30mA to SMA (Low-level output current i 50mA receammended operating condiions SN29007 UNIT MIN NOM MAX Supply voltage, Voc 4.75 5 5.25 v High | level 20 Normalized fan-out from each cutput, N | gh ingic revel [Low togic levet 10 Operating free-air temperature. Ta o 75, C electrical characteristics at specified free-air temperature PARAMETER TEST CONDITIONS MIN MAX | UNIT orc 9 VIH High-level input voltage 2sc 1.8 v 75C 1.6 Vit Low-level input voltage OC to 75'C o.s| Vv Vy input clamp voltage Voo=4.75V, I= -l2maA OC to 75C 1S v v =A 75V. | =l.2ma VoH High-level output voltage | YO OH "Al re 10 IC [2.8 v Vit =0.85V v. =$.25V. I = 16mA. ce Ol. 0.45 Von =Vinmin . . VoL Low-level output voltage eC to 75C v Voc =4.75V, IoL = (4. ima. 0.45 _ [Vin =Vpyqmn v =.25V, V) =4.5V, Orc to 75C HH High- evel input current ce l 60] uA Other inputs at ground Vy=0.45V Veg =5.25v 1.6 We Low- evel input current Other inputs OC to 75C -- mA at 5.25V Voo 74. 75V 4.4 ; Short-circut output Vv =5.25V OC to SC 18 55 A os current % cee: oR " Supply current, aif outputs . { Voc =5v OC to 75C 7 A CCH high (average per gate) ce " ; Supply current, all outputs sv OC to 75" t ss| mA = c m, cel low (average per gate) cone we Propagation delay time, tPLH . . 3 13 jow-to-high-level output Voo =5V, Ta =25C. ns ' Propagation delay tme, CL =ISeF. Ry = 4802 3 15 . PHL high-to-low-level output NOTES | terminal 2 w The maximum Vog value of 8 volts Is not the primary factor in determining the maxmum Vog wich may be applied to a number of interconnected devices The voltage at a high output 1s approximately two forward-biased-diode drops below the Vog voltage. so the primary limit on Voc is that the voltage at any input May not go above 5.5 volts. This elfectively limits the system Vo to approximately 7 volts This is the voltage between two emitters of a multiple-emitter ransistor. This rating applies between 'nputs that go directiy into the same NAND gate in the functional block alagram @Not more than one output shou'd be shorted at a time and duration of the short-circuit should not exceed one second