N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
*R
DS(on)= 10Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 100 V
Continuo us Drain Cur rent at Tamb=25°C ID200 mA
Pulsed Drain Current IDM 2A
Gate-Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 625 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 100 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS 1
50 µA
µAVDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 500 mA VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 10 ΩVGS=10V,ID=500mA
Forward Transconductance(1)(2
)gfs 100 mS VDS=25V,ID=500mA
Input Capacitance (2) Ciss 40 pF
Common So urce Output
Capacitance (2) Coss 15 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
(2) Crss 5pF
Turn-On Delay Time (2)(3) td(on) 5ns
VDD
≈25V, ID=500mA
Rise Time (2)(3) tr7ns
Turn-Off Delay Time (2)(3) td(off) 6ns
Fall Time (2)(3) tf7ns
E-Line
TO92 Compatible
ZVN3310A
3-378
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(On)
-On-State Drain Current (Amps)
Transfer Characteristics
0246810
01020 30 40 50
Saturation Characteristics
6
0
2
4
8
04 8 121620
10
VDS-Drain Source Voltage (Volts)
Voltage Satura tion Cha racteristics
VGS-Gate Source Voltage (Volts)
5V
ID=
1A
0.5A
0.2A
I
D(On)-
On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
1.4
1.2
0.8
0.2
0
0.4
1.0
0.6
VGS=
10V
7V
8V
I
D(On)
-On-State Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
1234567891020
6V
4V
3V
1.6
1.2
0.4
0
0.8
0246810
1.4
1.2
0.8
0.2
0
0.4
1.0
0.6
VDS=
25V
9V
1.4
1.0
0.6
0.2
5V
VGS=
10V
7V
8V
6V
4V
3V
9V
ID=
1A
0.5A
0.2A
1
10
100
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
ID=-0.5A
T-Temperature (C°)
0.4-80 -60
ZVN3310A
3-379
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
*R
DS(on)= 10Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 100 V
Continuo us Drain Cur rent at Tamb=25°C ID200 mA
Pulsed Drain Current IDM 2A
Gate-Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 625 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 100 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS 1
50 µA
µAVDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 500 mA VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 10 ΩVGS=10V,ID=500mA
Forward Transconductance(1)(2
)gfs 100 mS VDS=25V,ID=500mA
Input Capacitance (2) Ciss 40 pF
Common So urce Output
Capacitance (2) Coss 15 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
(2) Crss 5pF
Turn-On Delay Time (2)(3) td(on) 5ns
VDD
≈25V, ID=500mA
Rise Time (2)(3) tr7ns
Turn-Off Delay Time (2)(3) td(off) 6ns
Fall Time (2)(3) tf7ns
E-Line
TO92 Compatible
ZVN3310A
3-378
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(On)
-On-State Drain Current (Amps)
Transfer Characteristics
0246810
01020 30 40 50
Saturation Characteristics
6
0
2
4
8
04 8 121620
10
VDS-Drain Source Voltage (Volts)
Voltage Satura tion Cha racteristics
VGS-Gate Source Voltage (Volts)
5V
ID=
1A
0.5A
0.2A
I
D(On)-
On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
1.4
1.2
0.8
0.2
0
0.4
1.0
0.6
VGS=
10V
7V
8V
I
D(On)
-On-State Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
1234567891020
6V
4V
3V
1.6
1.2
0.4
0
0.8
0246810
1.4
1.2
0.8
0.2
0
0.4
1.0
0.6
VDS=
25V
9V
1.4
1.0
0.6
0.2
5V
VGS=
10V
7V
8V
6V
4V
3V
9V
ID=
1A
0.5A
0.2A
1
10
100
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
ID=-0.5A
T-Temperature (C°)
0.4-80 -60
ZVN3310A
3-379
TYPICAL CHA RACTERIST ICS
T ransconductance v drain current
ID- Drain Current (Amps)
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
0
80
0
40
120
160
VDS= 25V
0.2 0.4 0.6 0.8 1.0 1.2 0
80
0
40
120
160
VDS= 25V
24 681012
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Coss
Ciss
Crss
010 20 30 40 50
0
30
20
10
40
50
Q-Charge (nC)
Transconductan ce v gate-sou rce vol ta ge
VGS-Gate Source Voltage (Volts)
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
VDS=
20V
ID=0.6A
50V 80V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
ZVN3310A
3-380
