LM27761DSGR - TEXAS INSTRUMENTS

June, 2014 − Rev. 2 1Publication Order Number:

NSR0240H/D

NSR0240H

Schottky Barrier Diode

Schottky barrier diodes are optimized for very low forward voltage

drop and low leakage current and are used in a wide range of dc−dc

converter, clamping and protection applications in portable devices.

NSR0240H in a SOD−323 miniature package enables designers to

meet the challenging task of achieving higher efficiency and meeting

reduced space requirements.

Features

•Very Low Forward Voltage Drop −480 mV @ 100 mA

•Low Reverse Current − 0.2 mA @ 25 V VR

•250 mA of Continuous Forward Current

•Power Dissipation of 160 mW with Minimum Trace

•Very High Switching Speed

•Low Capacitance − CT = 4 pF

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

•LCD and Keypad Backlighting

•Camera Photo Flash

•Buck and Boost dc−dc Converters

•Reverse Voltage and Current Protection

•Clamping & Protection

Markets

•Mobile Handsets

•MP3 Players

•Digital Camera and Camcorders

•Notebook PCs and PDAs

•GPS

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage VR40 Vdc

Forward Continuous Current (DC) IF250 mA

Non−Repetitive Peak Forward Surge

Current IFSM 1.0 A

ESD Rating: Human Body Model

Machine Model ESD Class 1B

Class A

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

40 VOLT SCHOTTKY

BARRIER DIODE

Device Package Shipping†

ORDERING INFORMATION

NSR0240HT1G SOD−323

(Pb−Free) 3000 / Tape & Ree

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

AC = Specific Device Code

M = Date Code

G= Pb−Free Package

MARKING

DIAGRAM

CATHODE 2

ANODE

SOD−323

CASE 477

STYLE 1

2AC MG

NSVR0240HT1G SOD−323

(Pb−Free) 3000 / Tape & Ree

(Note: Microdot may be in either location)

NSR0240H

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance

Junction−to−Ambient (Note 1)

Total Power Dissipation @ TA = 25°CRqJA

PD740

160 °C/W

Thermal Resistance

Junction−to−Ambient (Note 2)

Total Power Dissipation @ TA = 25°CRqJA

PD460

270 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Leakage

(VR = 10 V)

(VR = 25 V)

(VR = 40 V)

0.2

0.6

0.55

2.0

Forward Voltage

(IF = 10 mA)

(IF = 100 mA)

(IF = 200 mA)

VF345

480

585

450

550

710

Total Capacitance

(VR = 5.0 V, f = 1 MHz) CT 4.0 pF

Reverse Recovery Time

(IF = IR = 10 mA, IR = 1.0 mA) trr 3.0 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.

2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.

3. Pulse Generator transition time << trr.

4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.

5. tp » trr

RL = 50 W

Current

Transformer

DUT

750 mH

0.1 mF

50 W Output

Pulse

Generator

trtp

10%

90%

IRM

trr

iR(REC) = 1 mA

Output Pulse

(IF = IRM = 10 mA; measured

at iR(REC) = 1 mA)

Pulse Generator

Output

Figure 1. Recovery Time Equivalent Test Circuit

50 W Input

Oscilloscope

0.1 mF

DC Current

Source

0 V

Adjust for IRM

−+

NSR0240H

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 2. Forward Voltage Figure 3. Leakage Current

VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)

0.60.50.40.30.10

0.001

0.01

0.1

100

1000

35302520151050

0.00001

0.0001

0.001

0.01

0.1

100

1000

Figure 4. Total Capacitance

VR, REVERSE VOLTAGE (V)

45352520151050

IF, FORWARD CURRENT (mA)

Ir, REVERSE CURRENT (mA)

CT, TOTAL CAPACITANCE (pF)

0.2

150°C

125°C

−40°C85°C 25°C

150°C

125°C

−40°C

85°C

25°C

30 40

TA = 25°C

NSR0240H

http://onsemi.com

PACKAGE DIMENSIONS

SOD−323

CASE 477−02

ISSUE H

STYLE 1:

PIN 1. CATHODE

2. ANODE

1.60

0.063

0.63

0.025 0.83

0.033

2.85

0.112

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. LEAD THICKNESS SPECIFIED PER L/F DRAWING

WITH SOLDER PLATING.

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

5. DIMENSION L IS MEASURED FROM END OF RADIUS.

NOTE 3

12bE

CNOTE 5

DIM MIN NOM MAX

MILLIMETERS

A0.80 0.90 1.00

A1 0.00 0.05 0.10

A3 0.15 REF

b0.25 0.32 0.4

C0.089 0.12 0.177

D1.60 1.70 1.80

E1.15 1.25 1.35

0.08

2.30 2.50 2.70

0.031 0.035 0.040

0.000 0.002 0.004

0.006 REF

0.010 0.012 0.016

0.003 0.005 0.007

0.062 0.066 0.070

0.045 0.049 0.053

0.003

0.090 0.098 0.105

MIN NOM MAX

INCHES

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NSR0240H/D

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