R07DS0224EJ0500 Rev.5.00 Page 1 of 9
Oct 19, 2015
Preliminary Datasheet
BCR10CS-12LB
600V-10A-Triac
Medium Power Use
Features
IT (RMS) : 10 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
The product gua rant eed maxim um junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
Outline
2, 4
1
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
4. T
2
Terminal
123
4
RENESAS Package code: PRSS0004AB-A
(Package name: TO-220S)
EOL
OL P
OL P
OL P
OL PKG
44
LP
OL P
OL P
L
L
OL P
PR
PR
20S) 0S)
123
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
123
4
RENESAS Package code: PRSS0004AS-A
(Package name: TO-263)
RENESAS Package code: PRSS0004AR-A
(Package name: TO-262)
4
123
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid
state relay, copying machine, electric tool, electric heater control, and other general purp ose control applications
Maximum Ratings
Parameter Symbol
Voltage class Unit
12
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 720 V
R07DS0224EJ0500
Rev.5.00
Oct 19, 2015
BCR10CS-12LB Preliminary
R07DS0224EJ0500 Rev.5.00 Page 2 of 9
Oct 19, 2015
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 10 A
Commercial frequency, sine full wave
360° conduction, Tc = 128CNote3
Surge on-state current ITSM 100 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 41.6 A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction temperature Tj – 40 to +150 C
Storage temperature Tstg – 40 to +150 C
Mass — 1.3 g Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150C, VDRM applied
On-state voltage VTM — — 1.5 V
Tc = 25C, ITM = 15 A,
Instantaneous measurement
Gate trigger voltageNote2 V
FGT — — 1.5 V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
V
RGT — — 1.5 V
V
RGT — — 1.5 V
Gate trigger currentNote2 I
FGT — — 30Note6 mA Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
I
RGT — — 30Note6 mA
I
RGT — — 30Note6 mA
Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125C/150C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 1.8 C/W Junction to caseNote3 Note4
Critical-rate of rise of off-state
commutating voltageNote5 (dv/dt)c 10/1 — — V/s Tj = 125C/150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measure d on the T2 tab.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is sho wn in the table bel ow.
6. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5.0 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR10CS-12LB Preliminary
R07DS0224EJ0500 Rev.5.00 Page 3 of 9
Oct 19, 2015
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C) × 100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C) × 100 (%)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
1.5 2.5 3.51.00.5 2.0 3.0 4.0
10
2
7
5
3
2
10
1
7
5
7
5
3
2
10
0
10
0
2510
1
40
30
20
10
37
10
2
4
25374
50
60
70
80
90
100
0
10
0
2310
1
5710
2
23 5710
3
23 5710
4
7
5
3
2
10
1
7
5
3
5
2
7
5
10
–1
3
2
10
2
5
10
1
7
2
3
10
3
5
7
2
3
–60 –20 20 60 100 160140–40 0 40 80 120
10
1
10
3
7
5
3
2
10
2
7
5
4
4
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
2.2
2.4
0
2.0
1.8
1.6
1.4
1.2
0.6
0.4
0.2
0.8
2310
–1
5710
0
23 5710
1
23 5710
2
2310
2
5710
3
1.0
2
Tj = 25°C
Tj = 150°C
VGM = 10V
PGM = 5W
IGM = 2A
VGT = 1.5V
VGD = 0.1V
IFGT I, IRGT III
IRGT I
PG(AV) =
0.5W
Typical Example
IRGT I, IRGT III
IFGT I
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
BCR10CS-12LB Preliminary
R07DS0224EJ0500 Rev.5.00 Page 4 of 9
Oct 19, 2015
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
32
24
20
12
4
01682
046101214
8
16
28
160
120
100
60
20
016
02 6 10 14
40
80
140
4812
10
3
7
5
3
2
10
2
10
4
7
5
3
2
10
5
7
5
3
2
10
6
7
5
3
2
–60 –20 20 60 100 160140–400 4080120
10
3
7
5
3
2
10
2
7
5
3
2
4
4
10
1
–60 –20 20 60 100 140 160–400 4080120
160
120
100
60
20
016
02 6 10 14
40
80
140
4812
160
120
100
60
20
04.0
00.51.52.53.5
40
80
140
1.02.0 3.0
360° Conduction
Resistive,
inductive loads
360° Conduction
Resistive,
inductive loads
Curves apply
regardless of
conduction angle
Typical Example
Typical Example
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
All fins are black
painted aluminum
and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
BCR10CS-12LB Preliminary
R07DS0224EJ0500 Rev.5.00 Page 5 of 9
Oct 19, 2015
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)× 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)× 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
160–400 4080120
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
160
100
80
40
20
0
140
60
120
–60 –20 20 60 100 160140–400 4080120
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
10
0
7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
10
0
Distribution T2+, G–
Typical Example
T2+, G+
T2–, G–Typical Example
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
Minimum
Characteristics
Value
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
Minimum
Characteristics
Value
I Quadrant
III Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 150°C
III Quadrant
I Quadrant
Typical Example
BCR10CS-12LB Preliminary
R07DS0224EJ0500 Rev.5.00 Page 6 of 9
Oct 19, 2015
C1 = 0.1 to 0.47μF
R1 = 47 to 100Ω
C0 = 0.1μF
R0 = 100Ω
Gate Trigger Characteristics Test CircuitsRecommended Circuit Values Around The Triac
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (μs)
Gate Trigger Current vs.
Gate Current Pulse Width
10
1
10
3
10
2
7
5
3
2
10
0
23 5710
1
7
5
3
2
23 5710
2
4
4
44
C
1
C
0
R
0
R
1
6Ω6Ω
6Ω
6V6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
Typical Example
I
FGT I
I
RGT I
I
RGT III
Load
BCR10CS-12LB Preliminary
R07DS0224EJ0500 Rev.5.00 Page 7 of 9
Oct 19, 2015
Package Dimensions
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
Package Name
LDPAK(S)-(1)
S
C-8
3
1.2g
M
ASS[Typ.
]
TO-220
S
P
RSS0004AB-A
RENESAS CodeJEITA Package Code
P
revious Code
Unit: mm
10.5Max
1.5Max
0.8 0.5
4.5
2.6 ± 0.4
4.5
(1.5)
0
+0.3
–0
3.0
+0.3
–0.5
P
ac
k
a
g
e
N
ame
TO-220S
EOL P
OL
OL
O
O
O
L
L
L
OL
OL
OL
OL
L
L
L PKG
K
PK
K
K
K
K
K
P
OL
OL
OL
OL
OL
OL
L
L
L
L
L
L
OL
OL
L
L
OL
OL
OL
O
O
OL
O
O
O
O
O
O
P
P
L
P
P
P
LP
L
L
L
OL
L
L
L
P
K
PK
K
KG
K
PK
K
P
P
P
P
P
P
P
P
P
L
L
L
L
L
L
O
O
O
O
O
O
OL
OL
OL
O
O
O
OL
OL
OL
L
L
L
L
K
K
K
K
K
K
K
K
PK
PK
K
1
1.
5
Max
5
1
1.
31.3
4.5
8
.
6
±±
0
.
3 0.3
9
.
89.8
±±
0
.
5 0.5
BCR10CS-12LB Preliminary
R07DS0224EJ0500 Rev.5.00 Page 8 of 9
Oct 19, 2015
MASS (Typ) [g]
1.4
Unit: mm
RENESAS Code
PRSS0004AS-A
Previous Code
TO-263A
JEITA Package Code
—
Package Name
TO-263
A
A
1
b
b
2
c
c
2
D
D
1
E
E
1
e
H
L
L
1
L
2
L
3
L
4
4.20
0.00
0.65
1.12
0.381
1.15
8.50
6.90
10.05
8.00
15.00
1.90
—
—
4.78
Min Nom
Dimensions in millimeters
Reference
Symbol
Max
—
—
—
—
—
—
—
—
—
—
2.54 BSC
—
—
—
—
0.25 BSC
—
4.60
0.255
0.95
1.42
0.737
1.40
9.10
7.50
10.65
8.80
15.60
2.50
1.70
1.78
5.28
EA
E1
D1
D
L
L4
GAUGE
PLANE
0
°
~ 8
°
A1
L3
H
L1L2
2x b2
2x b
A
e
H
c
0.25 A B
MM
B
c2
MASS (Typ) [g]
1.4
Unit: mm
RENESAS Code
PRSS0004AR-A
Previous Code
TO-262A
JEITA Package Code
—
Package Name
TO-262
A
A
1
b
1
b
2
c
1
c
2
D
E
e
H
L
L
1
L
2
4.200
2.050
0.635
0.640
1.140
0.330
8.500
9.650
—
12.900
—
—
Min Nom
Dimensions in millimeters
Reference
Symbol
Max
4.400
2.400
1.050
0.750
1.300
0.500
9.250
10.000
2.54 BSC
23.850
13.500
4.550
1.100
4.600
2.750
1.400
0.880
1.400
0.600
9.650
10.370
—
14.100
4.800
1.727
A
E
L2
D
L
L1
b1
b2
c2
A1
c1
e
0.25 A B
M
H
A
B
BCR10CS-12LB Preliminary
R07DS0224EJ0500 Rev.5.00 Page 9 of 9
Oct 19, 2015
Ordering Information
Orderable Part Number Package Packing Quantity Remark
BCR10CS-12LB#BH0 TO-263 Tube 50 pcs.
BCR10CS-12LBT 1#BH0 TO-263 Embossed Tape 800 pcs. Taping direction “T1”
BCR10CS-12LBA1#BH0 TO-262 Tube 50 pcs.
BCR10CS-12LB#B00 LDPAK(S)-(1) Tube 50 pcs. Not Recommend for New Design
BCR10CS12LBT11#B00 LDPAK(S)-(1) Embossed Tape 1000 pcs. Not Recommend for New Design
BCR10CS-12LB#B01 TO-220S Tube 50 pcs. EOL
BCR10CS12LBT11#B01 TO-220S Embossed Tape 1000 pcs. EOL
Note : Please confirm the specification about the shipping in detail.
Notice
1. Descripti on s of ci rcuit s , sof twar e and other r el ated inf o rmat ion i n this document are p r ov i ded on ly to ill ustr ate t he o per a t i on of sem ic o nd uc tor pr odu c ts and a ppl ic ation ex amples. You ar e f u ll y r es p on s ibl e for
the incorporatio n of the s e c i r c u its, s oft ware, a nd i nforma tion in the desi gn o f your equi pm e nt. Re ne s as E l ec tronics as s umes no responsibility for any losses incurred by you or third parties arising from the
use of these c i r c ui ts, s oft ware, or i nform a tion.
2. Renesas E l ec troni c s has u s ed re asonable c are in prep ar i ng the inf o r m ation inc l ud ed in this do c u m en t , but Renesas Electron ic s do es n ot warrant that s uc h informatio n i s er r or free. Renes a s E l ectro ni c s
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
3. Renesas E l ec troni c s does not as s ume any li ab ility for infrin gement of pat ents, copy r i gh ts, or other i ntellec tual pr ope r ty ri g h ts of third par ties by or ar ising f r om the use o f Renes as E le c tronics pr oducts or
tech ni c a l in forma tion des c r ib ed in this do c u m ent. N o li ce ns e , expr e s s, im plie d or oth er w is e, is gr a nted here by under an y pa t e nts, copyrights or other intellectual property rights of Renesas Electronics or
others.
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thir d pa r ties ar is i ng f r o m s uch alt er ation, modification, copy or otherw is e m is a ppropria t i on of Renesas Elec tronics pro duct.
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the product's qua li ty gra de, as ind icated bel ow.
"Standar d": C om p uters; of fice eq uipm e nt; c ommunic ations e qui pment; t es t and mea s urement equipm en t; audi o a nd v is u al equ ipm e nt; home electronic appliances; machine tools; personal electronic
equipme nt; and in dus trial r obo ts et c .
"Hig h Quality" : Transportation equi pm e nt (automobil es, trains , ship s , etc .); tr aff ic c on trol s yst em s; anti-d is as ter s yst ems; an t i-crime syst ems; and safety equipment etc.
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implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check t he quality grade of each Renesas Electronics product before using it
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incur r ed by you or third par ties arising from the use of any Re nes as Elec troni c s pr o du c t for wh ic h t h e pr o du c t is not inte nde d by Renesas Elec troni c s .
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redundan c y , fire control an d m a lfunction pre v en tion, app r op r iate t r ea tment for a gin g d egr a da t i on or any other appr o priat e m e asures. Bec a use the eval ua t i on of micr o c o m pu t e r s oft ware alone is v er y difficul t,
please ev al ua te the s a fet y of the f i nal pr o ducts or s y stem s m a nu f a c tured by you.
8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
produc ts in c om p li an c e wi t h al l ap plicable laws a nd r eg ul ations t h at regula te t he inc l usion or use of c o ntrol led s u bs tance s , including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for dam ag es o r losses oc cu rring as a resu lt of y ou r n onc omplianc e with applicable laws a nd r eg ula tions.
9. Renesas E l ec troni c s pr o duc ts an d technolo gy m a y no t be used f o r o r incorporated into any p r odu c ts or s yst ems whose manufact u re, us e, or s al e i s pr oh ib ited under an y appl icable dom e s tic or f o reign laws or
regulations . You should not use R en es as Electronic s produc ts or technolo gy desc r ib ed in this doc u m en t for an y pu r pose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document , you s h oul d comply wi t h t h e ap pl ic ab le e x po r t control la ws an d
regulations and follow the procedures requir ed by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places t he pr od uct with a th ir d par ty, to no tif y s uc h thir d party in a dv a nc e of th e
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or R enes a s E lectr o ni c s pr o duc ts, or if you hav e a ny other inqu iries.
(Not e 1) "Re nesas El ec tronics" as u s ed in t h is d oc ument m ean s R en es a s Electronic s Corpor a t i on and als o i nc l ud es its m ajorit y - owned subsidiari es.
(Not e 2) "Re nesas El ec tronics prod uct( s)" m e ans an y pr od uct dev e lo pe d or m an ufactured by or for R en esa s Electronic s.
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Renesas Electronics America Inc.
2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3
Tel: +1-905-237-2004
Renesas El e ctronics Europe Limi te d
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas El e ctronics Eur ope G m bH
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Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas El e ctronics (China) Co., Ltd.
Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas El e ctronics (Sha ngha i ) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Ele ctronics Hong Kong Limited
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Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas El e ctronics Ta i wan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas El e ctronics Malay sia Sdn. Bhd.
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas El e ctronics Indi a Pvt. Ltd.
No.777C, 100 Feet Road, HALII Stage, Indiranagar, Bangalore, India
Tel: +91-80-67208700, Fax: +91-80-67208777
Renesas Electronics Korea Co., Ltd.
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
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