The 2N3773 is a power transistor designed for high power NPN POWER TRANSISTORS | audio, disk head positioners and other linear applications. The device can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. Features: e High safe operating area: 150 W @ 100 V Completely characterized for linear operation High DC current gain and low saturation voltage hfe = 15 (Min) @8A,4V VCE(sat) = 1.4 V (Max) @ IC = 8A, IB=0.8A e For low distortion complementary designs 2N3773 140 VOLTS 16 AMP, 150 WATTS NPN COLLECTOR BASE Fi " EMITTER CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.845(21.47} MAX. | p= .958(9.0) MAX 065(1.65) je DIA MAX oo 7 rr SEATING PLANE 0.043(4.09) 014 of be E so10 82) MIN 0.038(0.97} 1.050(26.68) MAX Q.678(17.15) 0.650(16.51) CASE TEMP REFERENCE POINT 20(5.00) EMITTER 1 Zaa| 1.177(29.90) L 1.873(39.96) MAX sass, 0.225(5.72) COLLECTOR 0.162(4.09) Dia 0.205/5.21) (CASE) 0.15(3.84) 2 HOLES 0.440(11.18) 0.420/10.67) maximum ratings (T, = 25C) (unless otherwise specified) RATING SYMBOL 2N3773 UNITS Collector-Emitter Voltage VCEO 140 Volts Collector-Base Voltage VcBo 160 Volts Emitter Base Voltage VEBO 7 Volts Collector Current Continuous Io 16 A Peak lom 30 Base Current Continuous Ip 4 A Peak 15 Total Power Dissipation @ Tc = 25C Pp 150 Watts Derate above 25C 0.855 w/C Operating and Storage Junction Temperature Range Ty, Tsta -65 to +200 C thermal characteristics Thermal Resistance, Junction to Case Rasc 1.17 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 260 C 807 electrical characteristics (Tc = 25C) (uniess otherwise specified) | CHARACTERISTIC | SYMBOL| MIN | TYP | MAX | UNIT | off characteristics Collector-Emitter Sustaining Voltage (Ic = 2A) VCEO(sus) 140 Voits Collector-Emitter Sustaining Voltage (Ic = .1mMA, Vepcoffy = 1.5V, Ree = 100 Ohms) VCEX 160 _ Volts Collector Cutoff Current (VcE = 120V) IcEO _ _ 10 mA Collector Cutoff Current (Voce = 140V, Vee = -1.5V) IcEX _ _ 2 mA (VCE = 140V, VBE = -1.5V, Tc = 150C) _ 10 Emitter Cutoff Current (VeB = 7V) lEBO _ _ 5 mA second breakdown | Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 4 | on characteristics DC Current Gain hee (Ic = 8V, VcE = 4V) 15 _ 60 (Iq = 16A, Veg = 4V) 5 = = Collector-Emitter Saturation Voltage VcE(sat) (Ig = 8A, Ip = 800mA) 1.4 V (I = 16A, Ip = 3.2A) 4 Vv Base-Emitter Voltage VBE(on) (Ic = 8A, Voce = 4V) 2.2 V 300 200 100 70 50 30 20 hee, OC CURRENT GAIN Veg, COLLECTOR-EMITTER VOLTAGE (VOLTS) 7.0 c* 5.0 0 0.2 05 07 10 20 3.0 7 10 20 0.05 0.07 0.1 02 9.3 0.5 07 1.0 Ic, COLLECTOR CURRENT (AMPS) Ig. BASE CURRENT (AMPS) FIGURE 1 DC CURRENT GAIN FIGURE 2 COLLECTOR SATURATION REGION 808 ic, COLLECTOR CURRENT (AMP) V, VOLTAGE (VOLTS) VCE (sat) 0 02 03 0.5 0.7 1.0 20 3.0 .0 7.0 10 20 Ig, COLLECTOR CURRENT (AMPS) FIGURE 3 ON VOLTAGE 30 20 10 5.0 3.0 2.0 1.0 Os BONDING WIRE LIMIT 0.3 THERMAL LIMIT 0.2 @ Tcase = 25C, SINGLE PULSE 01 SECOND BREAKDOWN LIMIT 0.05 0.03 3.0 5.0 7.0 10 20 30 50 70 100 200 300 Vg, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 4 FORWARD BIAS SAFE OPERATING AREA . THERMAL DERATING POWER DERATING FACTOR (%) 0 9 40 80 120 160 200 Tc, CASE TEMPERATURE (C) FIGURE 5 POWER DERATING 809