APTGU40TA120P Triple phase leg PT IGBT Power Module VBUS2 VBUS3 G1 G3 G5 E1 U G2 E2 0/VBUS1 E3 U E5 W G4 G6 E4 E6 0/VBUS2 0/VBUS3 VBUS 1 0/VBUS 1 V Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control VBUS 2 VBUS 3 G1 G3 E1 E3 0/VBUS 2 G5 0/VBUS 3 E5 E2 E4 E6 G2 G4 G6 V W Features * Power MOS 7(R) Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 200kHz range - Soft recovery parallel diodes - Low diode VF * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation SSOA Switching Safe Operating Area Tc = 25C Max ratings 1200 64 40 160 20 277 Tj = 150C 170A @ 960V Tc = 25C Tc = 80C Tc = 25C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-6 APTGU40TA120P - Rev 0 September, 2004 VBUS1 VCES = 1200V IC = 40A @ Tc = 80C APTGU40TA120P All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon1 Eon2 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-on Switching Energy X Eoff Td(on) Tr Td(off) Tf Eon1 Eon2 Eoff Turn-off Switching Energy Y Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-on Switching Energy X Turn-off Switching Energy Y Test Conditions VGE = 0V, IC = 500A Tj = 25C VGE = 0V VCE = 1200V Tj = 125C T VGE =15V j = 25C IC = 40A Tj = 125C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 40A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 40A R G = 5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 40A R G = 5 Min Typ Max 1200 3.3 3.0 3 Min Typ 3935 300 55 185 25 80 18 29 102 38 900 1869 904 18 29 151 79 900 3078 2254 500 2500 3.9 Unit V A V 6 100 V nA Max Unit pF nC ns J ns J APT website - http://www.advancedpower.com 2-6 APTGU40TA120P - Rev 0 September, 2004 X Eon2 includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 APTGU40TA120P Reverse diode ratings and characteristics Symbol Characteristic VRRM Test Conditions Min Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 25A VGE = 0V trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 25A VR = 600V di/dt =800A/s 250 500 Tc = 80C Tj = 25C Tj = 125C 25 2.3 1.8 Tj = 125C 0.13 Tj = 25C 2.3 Tj = 125C 6 Symbol Characteristic Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Unit To heatsink V Tj = 25C Tj = 125C Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Max 1200 Maximum Peak Repetitive Reverse Voltage IRM RthJC Typ M6 2500 -40 -40 -40 3 Typ A A 2.8 V s C Max 0.45 1 Unit C/W V 150 125 100 5 250 C N.m g Package outline APT website - http://www.advancedpower.com 3-6 APTGU40TA120P - Rev 0 September, 2004 5 places (3:1) APTGU40TA120P Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (V GE=10V) 90 250s Pulse Test < 0.5% Duty cycle 80 70 Ic, Collector Current (A) 60 50 TJ=125C 40 30 TJ=25C 20 10 0 250s Pulse Test < 0.5% Duty cycle 80 70 60 50 TJ=125C 40 30 TJ=25C 20 10 0 0 1 2 3 4 0 1 2 3 4 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE , Gate to Emitter Voltage (V) 250s Pulse Test < 0.5% Duty cycle 140 120 TJ=125C 100 80 60 40 TJ=25C 20 TJ=-55C 0 VCE, Collector to Emitter Voltage (V) 0 2 4 6 8 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 5 IC=80A IC =40A 3 IC =20A 2 TJ = 25C 250s Pulse Test < 0.5% Duty cycle 1 0 8 10 12 14 VGE, Gate to Emitter Voltage (V) 14 10 8 VCE =960V 6 4 2 0 40 80 120 Gate Charge (nC) 160 200 On state Voltage vs Junction Temperature 5 IC =80A 4 IC=40A 3 2 IC =20A 250s Pulse Test < 0.5% Duty cycle VGE = 15V 1 0 0 16 VCE=240V VCE=600V 12 0 Breakdown Voltage vs Junction Temp. 25 50 75 100 TJ, Junction Temperature (C) 125 DC Collector Current vs Case Temperature 1.20 100 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) 6 IC = 40A TJ = 25C 16 10 6 4 Gate Charge 18 VCE, Collector to Emitter Voltage (V) Ic, Collector Current (A) 160 5 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125 80 60 40 20 0 -50 0 50 100 150 TC, Case Temperature (C) APT website - http://www.advancedpower.com 4-6 APTGU40TA120P - Rev 0 September, 2004 Ic, Collector current (A) 90 Turn-On Delay Time vs Collector Current 35 30 td(off), Turn-Off Delay Time (ns) VGE = 10V 25 20 VGE = 15V 15 10 TJ = 25C, TJ = 125C VCE = 600V RG = 5, L=100H 5 0 0 20 40 60 80 Turn-Off Delay Time vs Collector Current 180 160 VGE =15V, TJ=125C 140 VGE =10V, TJ=125C 120 VGE =15V, T J=25C 100 80 VGE =10V, T J=25C 60 40 VCE = 600V, RG = 5, L=100H 20 0 100 Current Rise Time vs Collector Current 80 20 tf, Fall Time (ns) tr, Rise Time (ns) 100 TJ = 125C 60 VGE=15V 40 T J = 25C, T J = 125C VCE = 600V RG = 5, L=100H 20 TJ = 25C 60 40 20 VCE = 600V, RG = 5, L=100H, VGE = 15V 0 0 20 40 60 80 100 0 ICE, Collector to Emitter Current (A) 7 TJ =125C, VGE=15V TJ =125C, VGE=10V 6 5 TJ =25C, V GE=10V 4 TJ=25C, VGE =15V 3 2 V CE = 600V RG = 5, L=100H 1 0 0 20 40 60 80 4 TJ = 125C 2 T J = 25C 1 0 0 Switching Energy Losses (mJ) 4 Eoff, 40A Eon2,20A Eoff, 20A 0 10 20 30 40 Gate Resistance (Ohms) 40 60 80 100 Switching Energy Losses vs Junction Temp. Eon2, 80A Eon2, 40A 0 20 ICE, Collector to Emitter Current (A) Eoff, 80A 2 100 3 100 8 6 80 VCE = 600V VGE = 15V RG = 5 L=100H 5 Switching Energy Losses vs Gate Resistance 10 60 6 ICE, Collector to Emitter Current (A) V CE = 600V VGE = 15V, TJ = 125C 40 Turn-Off Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 8 20 ICE , Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current Eon2, Turn-On Energy Loss (mJ) 80 80 0 Switching Energy Losses (mJ) 60 Current Fall Time vs Collector Current 100 VGE=10V 12 40 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) 8 VCE = 600V VGE = 15V RG = 5 6 Eoff, 80A 4 Eon2, 40A Eoff, 40A 2 Eon2,20A Eoff, 20A 0 50 Eon2, 80A 0 25 50 75 100 TJ, Junction Temperature (C) APT website - http://www.advancedpower.com 125 5-6 APTGU40TA120P - Rev 0 September, 2004 td(on), Turn-On Delay Time (ns) APTGU40TA120P APTGU40TA120P Minimum Switching Safe Operating Area 1000 Coes 100 180 IC, Collector current (A) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 Cies Cres 160 140 120 100 80 60 40 20 0 10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 200 400 600 800 1000 V CE , Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0 50 0.45 0.9 0.4 0.35 0.3 0.7 0.25 0.5 0.2 0.3 0.15 0.1 0.05 0.1 Single Pulse 0.05 0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Rectangular Pulse Duration (Seconds) 1.E+00 1.E+01 ZVS 150 ZCS VCE = 800V D = 50% RG = 5 T J = 125C T C = 75C 100 hard switching 50 0 0 10 20 30 40 IC, Collector current (A) 50 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 6-6 APTGU40TA120P - Rev 0 September, 2004 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 200