APTGU40TA120P - Advanced Power Technology

APTGU40TA120P

APTGU40TA120P – Rev 0 September, 2004

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G5

G6

E6

E5

G3

VBUS 2 VBUS 3

G4

E4

WV

E3 0/VBUS 3

0/VBUS 2

G1

VBUS 1

U

E2

G2

0/VBUS 1 E1

Absolute maximum ratings

Symbol Parameter Max ratings Unit

VCES Collector - Emitter Breakdown Voltage 1200 V

Tc = 25°C 64

IC Continuous Collector Current Tc = 80°C 40

ICM Pulsed Collector Current Tc = 25°C 160

A

VGE Gate – Emitter Voltage ±20 V

PD Maximum Power Dissipation Tc = 25°C 277 W

SSOA Switching Safe Operating Area Tj = 150°C 170A @ 960V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

VBUS1 VBUS2 VBUS3

W

E6

0/VB US3

V

G6

E5

0/VB US1

G2

E1

E2

0/VB US2

U

E3

E4

G4

G1 G3 G5

VCES = 1200V

IC = 40A @ Tc = 80°C

Applicatio

n

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

Features

• Power MOS 7® Punch Through (PT) IGBT

- Low conductio n loss

- Ul tra fast tail current shutoff

- Low gate charge

- Switching frequency capability in the 200kHz

range

- Soft recovery parallel diodes

- Low diode VF

• Kelvin emitter for easy drive

• Very low stray inductance

- Symmetrical design

- Lead frames for power connections

• High level of integration

Benefits

• Outstandi ng perfor mance at hi gh freq uenc y

operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Very low (12mm) profile

• Each leg can be easily paralleled to achieve a phase

leg of three times the current capability

• Module can be configured as a three phase bridge

• Module can be configured as a boost followed by a

full bridge

Triple phase leg

P

T IGBT Power Module

APTGU40TA120P

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA 1200 V

Tj = 25°C 500

ICES Zero Gate Voltage Collector Current VGE = 0V

VCE = 1200V Tj = 125°C 2500

µA

Tj = 25°C 3.3 3.9

VCE(on) Collector Emitter on Voltage VGE =15V

IC = 40A Tj = 125°C 3.0 V

VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1mA 3 6 V

IGES Gate – Emitter Leakage Current VGE = ±20V, VCE = 0V ±100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Cies Input Capacitance 3935

Coes Output Capacitance 300

Cres Reverse Transfer Capacitance

VGE = 0V

VCE = 25V

f = 1MHz 55

pF

Qg Total gate Charge 185

Qge Gate – Emitter Charge 25

Qgc Gate – Collector Charge

VGE = 15V

VBus = 300V

IC = 40A 80

nC

Td(on) Tur n-o n Delay Ti me 18

Tr Rise Time 29

Td(off) Turn-off Delay Time 102

Tf Fall Time 38

ns

Eon1 Turn-on Switching Energy 900

Eon2 Tur n-on Switchi ng Energy X 1869

Eoff Turn-off Switching Energy Y

Inductive Switching (25°C)

VGE = 15V

VBus = 600V

IC = 40A

RG = 5Ω

904

µJ

Td(on) Tur n-o n Delay Ti me 18

Tr Rise Time 29

Td(off) Turn-off Delay Time 151

Tf Fall Time 79

ns

Eon1 Turn-on Switching Energy 900

Eon2 Tur n-on Switchi ng Energy X 3078

Eoff Turn-off Switching Energy Y

Inductive Switching (125°C)

VGE = 15V

VBus = 600V

IC = 40A

RG = 5Ω

2254

µJ

X Eon2 includes diode reverse recovery

Y In accordance with JEDEC standard JESD24-1

APTGU40TA120P

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Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

VRRM Maximum Peak Repetitive Reverse Voltage 1200 V

Tj = 25°C 250

IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA

IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C 25 A

Tj = 25°C 2.3 2.8

VF Diode Forward Voltage IF = 25A

VGE = 0V Tj = 125°C 1.8 V

trr Reverse Recovery Time Tj = 125°C 0.13 µs

Tj = 25°C 2.3

Qrr Reverse Recovery Charge

IF = 25A

VR = 600V

di/dt =800A/µs Tj = 125°C 6 µC

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT 0.45

RthJC Junction to Case Diode 1

°C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M6 3 5 N.m

Wt Package Weight 250 g

Package outline

5 places (3:1)

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Typical Performance Curve

Outpu t characteristics (VGE=15V)

TJ=25°C

TJ=125°C

0

10

20

30

40

50

60

70

80

90

01234

Ic, Collector current (A)

V

C

E, Collector to Emitter Voltage (V)

250µs Pulse T est

< 0.5% Dut

y

c

y

cle

Gate Charge

VCE=240V

VCE=600V

VCE =960V

0

2

4

6

8

10

12

14

16

18

0 40 80 120 160 200

Gate Charge (nC)

VGE, Gate to Emitter Voltage (V)

IC = 40A

TJ = 25°C

0

20

40

60

80

100

-50 0 50 100 150

TC, Case Temperature (°C)

Ic, DC Collector Current (A)

DC Collector Current vs Case Temperature

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-50 -25 0 25 50 75 100 125

TJ, Junction Temperature (°C)

Breakdown Voltage vs Junction Temp.

Collector to Emitter Breakdown Voltage

(Normalized)

IC=80A

IC=40A

IC=20A

0

1

2

3

4

5

025 50 75 100 125

TJ, Junction Temperature (°C)

On state Voltage vs Junction Temperature

VCE, Collector to Emitter Voltage (V)

250µs Pulse Te st

< 0.5% Duty cycle

VGE = 15V

IC=80A

IC=40A

IC=20A

0

1

2

3

4

5

6

6 8 10 12 14 16

VGE, Gate to Emitter Voltage (V)

VCE, Collector to Emitter Voltage (V)

On state Voltage vs Gate to Emitter Volt.

TJ = 25°C

250µs Pulse Te st

< 0. 5% Duty cycle

Output Characteristics (V GE=10V)

TJ=25°C

TJ=125°C

0

10

20

30

40

50

60

70

80

90

012345

Ic, Collector Current (A)

VCE, Collector to Emitter Voltage (V)

250µs Pulse T est

< 0.5% Duty cycle

Transfer Characteristics

TJ=25°C TJ=-55°C

TJ=12 5°C

0

20

40

60

80

100

120

140

160

0246810

VGE, Gate to Emitter Voltage (V)

Ic, Collector Cur rent (A)

250µs Pulse Test

< 0.5% Duty cycle

APTGU40TA120P

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Eon2, 80A

Eoff, 80A

Eon2, 40A

Eoff, 40A

Eon2,20A

Eoff, 20A

0

2

4

6

8

0 255075100125

TJ, Junction Temperature (°C)

Switching Energy Losses (mJ)

Switching Energy Losses vs Junction Temp.

VCE = 600V

VGE = 15V

RG = 5Ω

Eon2, 80A

Eoff, 80A

Eon2, 40A

Eoff, 40A

Eon2,20A

Eoff, 20A

0

2

4

6

8

10

12

0 1020304050

Gate Resistance (Ohms)

Switch ing Ener gy Losses (mJ)

Switching Energy Losses vs Gate Resistance

VCE = 600V

VGE

= 15V, TJ= 125°C

TJ = 25°C

TJ = 125°C

0

1

2

3

4

5

6

0 20406080100

ICE, Collector to Emitter Current (A)

Eoff, Turn-off Energy Loss (mJ)

Turn-Off Energy Loss vs Collector Current

VCE = 600V

VGE

= 15V

RG = 5Ω

L=100µH

TJ=25°C,

VGE=15V

TJ=25°C,

VGE=10V

TJ=125°C,

VGE=15V

TJ=125°C,

VGE=10V

0

1

2

3

4

5

6

7

8

0 20406080100

ICE, Collector to Emitter Current (A)

Turn-On Energy Loss vs Collector Curren

t

Eon2, Turn-On Energy Loss (mJ

)

VCE = 600V

RG = 5Ω, L=100µH

TJ = 25°C

TJ = 125°C

0

20

40

60

80

100

0 20406080100

ICE , Collector to Emitter Current (A)

tf, Fall Time (ns)

Current Fall Time vs Collector Current

VCE = 600V, RG = 5Ω, L=100µH, VGE = 15V

VGE=15V

VGE

=10V

0

20

40

60

80

0 20406080100

ICE, Collector to Emitter Current (A)

tr, Rise Time (ns)

Current Rise Time vs Collector Current

TJ = 25°C, TJ = 125°C

VCE = 600V

RG = 5Ω, L=100µH

VGE=15V,

TJ=25°C

VGE=10V,

TJ=25°C

VGE=15V,

TJ=125°C

VGE=10V,

TJ=125°C

20

40

60

80

100

120

140

160

180

0 20406080100

ICE, Collector to Emitter Current (A)

td(off), Turn-Off Delay Time (ns)

Turn-Off Delay Time vs Collector Current

VCE = 600V, RG = 5Ω, L= 10 0µH

VGE = 15V

VGE

= 10V

0

5

10

15

20

25

30

35

0 20406080100

ICE, Collector to Emitter Current (A)

td(on), Turn-On Delay Time (ns)

Turn-On Delay Time vs Collector Current

TJ = 25°C, TJ = 125°C

VCE = 600V

RG = 5Ω, L= 100µH

APTGU40TA120P

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hard

switching

ZCS

ZVS

0

50

100

150

200

0 1020304050

IC, Collector current (A)

Fmax, Operating Frequency (kHz)

Operating Frequency vs Collector Current

VCE = 800V

D = 50%

RG = 5Ω

TJ = 125°C

TC = 75°C

Maximum Effective Tr ansient Thermal Impedan ce, Junction to Case vs Pu lse Dur ation

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

0

20

40

60

80

100

120

140

160

180

0 200 400 600 800 1000

IC, Collector current (A)

VCE , Collector to Emitter Voltage (V)

Minimum Switching Safe Operating Area

Cies

Cres

Coes

10

100

1000

10000

0 1020304050

C, Capacitance (pF)

Capacitance vs Collector to Emitter Voltage

VCE, Collector to Emitter Voltage (V)

APT re s e rves the rig ht to cha nge , wit ho ut not ice , the specificatio ns and i nfo rma tio n co nta ine d herein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522