Advance Product Information July 22, 2004 77 GHz Transceiver Switch TGS4307-EPU Key Features * * * * * * * * I/O Compatible with MA4GC6772 3 Antenna Ports Receive, Source, and LO Ports 2.5 dB RX/TX Insertion Loss Typical 40 dB Source/Mixer Isolation Typical 25 dB Ant/Ant Isolation Typical Bias Supply: 1.3V@40mA Die Size: 1.70 x 2.16 x 0.1 mm Primary Applications * * Automotive Radar Instrumentation Radar Application Schematic Product Description The TGS4307 is a 77 GHz switch matrix for use in automotive radar transceivers. The switch is designed using TriQuint's proven VPIN diode production process. J2 TGS4307 B2 J3 J1 B3 B1 Three antenna ports may be selected independently and directed to a source (J5) or a receive (J4) port. Additionally, the source port can be directed to the LO port for use with a downconverting mixer. J4 RX Port J5 B5 B4 Source Port B4 IF J6 LO Port Measured Fixtured Data Bias: 1.3V @ 40mA 0 0 -10 -2 -20 -3 Isolation (dB) Insertion Loss (dB) -1 -4 -5 -6 -7 Receive Path Transmit Path LO Path -8 -9 -10 -30 -40 -50 Ant / Ant Source / Ant Source / LO Source / RX -60 -70 -80 70 71 72 73 74 75 76 Frequency (GHz) 77 78 79 80 70 71 72 73 74 75 76 77 78 79 80 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL V + - V I + PARAMETER VALUE NOTES Positive Supply Voltage 2V 2/ Negative Supply Voltage -8 V 2/ Positive Supply Current (Quiescent) 80 mA 2/, 3/ PIN Input Continuous Wave Power PD Power Dissipation TM TSTG TBD 160 mW 2/ 0 Mounting Temperature (30 Seconds) 320 C -65 to 150 0C Storage Temperature 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Control line B1, B2, B3 maximum current = 20 mA Control line B4, B5 maximum current = 40 mA TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PA R A M ET E R Frequency R ange Bias Supply TY PIC A L U N ITS 75 - 80 GHz 1.3V @ 40m A Insertion Loss, Port J3 to J4 (RX) 2.5 dB Insertion Loss, Port J1 to J5 (TX) 2.5 dB Insertion Loss Source to LO , Port J5 to J6 (R X) 1.8 dB Isolation Source to R X, Port J4 to J5 (R X) > 40 dB Isolation Source to Antenna, Port J1 to J5 (RX) > 40 dB Isolation Antenna to Antenna, Port J1 to J3 (RX,TX) 25 dB Isolation Source to LO , Port J5 to J6 (TX) 20 dB R eturn Loss >8 dB Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Preliminary Measured Data Bias: 1.3V @ 40mA 0 -1 LO Path Insertion Loss (dB) -2 -3 -4 -5 Transmit Path Receive Path -6 -7 -8 Receive Path Transmit Path LO Path -9 -10 65 67 69 71 73 75 77 79 81 Frequency (GHz) 83 85 87 89 91 Isolation (dB) 0 -10 Source/LO -20 Ant/Ant -30 Source/RX -40 -50 -60 Ant / Ant Source / Ant Source / LO Source / RX Source/Ant -70 -80 65 67 69 71 73 75 77 79 81 83 85 87 89 91 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Return Loss (dB) Preliminary Measured Data Antenna 3 to RX Port 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 RL @ RX Port RL @ Antenna Port 65 67 69 71 73 75 77 79 81 Frequency (GHz) 83 85 87 89 91 Source Port to Antenna 1 0 -2 RL @ Antenna Port RL @ Source Port -4 -6 Return Loss (dB) -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 65 67 69 71 73 75 77 79 81 Frequency (GHz) 83 85 87 89 91 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Preliminary Measured Data Source Port to LO Port 0 RL @ LO Port RL @ Source Port -2 -4 -6 Return Loss (dB) -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 65 67 69 71 73 75 77 79 81 Frequency (GHz) 83 85 87 89 91 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Mechanical Drawing 0.880 (0.035) 0.123 (0.005) 1.230 (0.048) 1.638 (0.064) 2.160 (0.085) 3 2.058 (0.081) 1.870 (0.074) 1.274 (0.050) 0.463 (0.018) 2.038 (0.080) 4 5 2 6 1 1.873 (0.074) 1.274 (0.050) 7 0.775 (0.031) 8 0.335 (0.013) 11 0.123 (0.005) 10 9 0.341 (0.013) 0.717 (0.028) 0.103 (0.004) 0 0 0.103 (0.004) 1.657 1.760 (0.065) (0.069) Units: millimeters (inches) Thickness: 0.1016 (0.004) Chip edge to bond pad dimensions are shown to center of bond pads Chip size tolerance: +/- 0.05 (0.002) GND IS BACKSIDE OF MMIC Bond Pad # 1 (Antenna Port 1) Bond Pad # 2 (VB1) Bond Pad # 3 (Antenna Port 2) Bond Pad # 4 (VB2) Bond Pad # 5 (VB3) Bond Pad # 6 (Antenna Port 3) Bond Pad # 7 (VB5) Bond Pad # 8 (Source Port) Bond Pad # 9 (LO Port) Bond Pad # 10 (VB4) Bond Pad # 11 (Receiver Port) 0.100 x 0.100 0.140 x 0.100 0.100 x 0.100 0.100 x 0.140 0.140 x 0.100 0.100 x 0.100 0.140 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.140 0.100 x 0.100 (0.004 x 0.004) (0.006 x 0.004) (0.004 x 0.004) (0.004 x 0.006) (0.006 x 0.004) (0.004 x 0.004) (0.006 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.006) (0.004 x 0.004) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Assembly Drawing External Interface (TFN) Switch MMIC Substrate: Alumina r=9.8 Thickness=5mil Substrate: GaAs r=12.9 Thickness=4mil 5mil 3mil 3 Bondwires Gap ~4mil Diameter=0.7mil Height< 1mil B1 B2 B4 B5 B3 TFN Microstrip Trace Width=120mm (50 ) RF I/O Pad Note: Ribbon bond is acceptable (instead of 3 bondwires) Recommended Interconnect Scheme Note: Unused Ports should be terminated with 50 . GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Application Schematic J2 TGS4307 B2 J3 J1 B3 B1 J4 J5 RX Port B5 B4 Source B4 Port IF J6 LO Port Bias State Table Function Selected Antenna (B1, B2, or B3) Unused Antennas (B1, B2, or B3) B4 B5 Transmit -5 to 0V +10mA each +20mA 0V Receive -5 to 0V +10mA each 0V +20mA Forward voltage is ~ +1.3V to achieve bias current GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 3000C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Wedge bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 2000C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com