TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2004
1
77 GHz Transceiver Switch
Key Features
• I/O Compatible with MA4GC6772
• 3 Antenna Ports
• Receive, So urce, and LO Port s
• 2.5 dB RX/TX Insertion Loss Typical
• 40 dB Source/Mixer Isolation T ypical
• 25 dB Ant/Ant Isolation Typical
• Bias Supply: 1.3V@40mA
• Die Siz e: 1.70 x 2.16 x 0.1 mm
Primary Applications
• Aut omotive Rada r
• Instrumentation
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
TGS4307-EPU
Product Description
The TGS4307 is a 77 GHz switch matrix for
use in automotive radar transceivers. The
switch is designed using TriQuint’s proven
VPIN diode production process.
Three antenna ports may be selected
independently and directed to a source (J5)
or a receive (J4) port. Additionally, the
source port can be directed to the LO port
for use with a downconverting mixer.
Measured Fixtured Data
Bias: 1.3V @ 40mA
Radar Application Schematic
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
70 71 72 73 74 75 76 77 78 79 80
Frequency (GHz)
Insertion Loss (dB)
Recei ve Path
Transmit P ath
LO Path
-80
-70
-60
-50
-40
-30
-20
-10
0
70 71 72 73 74 75 76 77 78 79 80
Frequency (GHz)
Isolation (dB)
Ant / Ant
Source / Ant
Source / LO
Source / RX
J1
TGS4307
J3
J2
J6
IF
J5
J4
RX Port
Source
Port
LO Port
B1 B3
B2
B4 B5
B4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2004
2
TABLE I
MAXIMUM RATINGS 1/
SYMBOL PARAMETER VALUE NOTES
V+Po s itive Su pply Voltage 2 V 2/
V-Negative Supply Voltage -8 V 2/
I+Positive Supply Current (Quiescent) 80 mA 2/, 3/
PIN Input Continuous Wave Power TBD
PDPower Dissipation 160 mW 2/
TMMounting Temperatu re (30 Seconds) 320 0C
TSTG Storage Temperature -65 to 150 0C
1/ Thes e ratings repres ent the maximum operable v alues for this de vic e.
2/ Com binations o f supply voltage, supply current, input pow er, a nd output power sh all not exceed P D.
3/ Control line B1, B2, B3 maximum c urre nt = 2 0 mA
Control line B4, B5 maximum current = 40 m A
TGS4307-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
PARAMETER TYPICAL UNITS
Frequency Range 75 - 80 GH z
Bias Supply 1.3V @ 40mA
Ins e rtion L o s s, P o rt J 3 to J4 (RX ) 2 .5 d B
Ins e rtion L o s s, P o rt J 1 to J5 (T X) 2 .5 d B
In s e r tio n L o ss So u rce to LO, Po r t J 5 to J6 ( RX ) 1 .8 d B
Is o la tio n So u rc e to RX, P o r t J 4 to J 5 ( RX ) > 4 0 d B
Isolation Source to A ntenna, Port J1 to J5 (RX) >40 dB
Isolation Antenna to A ntenna, P ort J1 to J3 (RX,TX) 25 dB
Is o la tio n So u rc e to LO, Po r t J 5 to J 6 ( T X) 2 0 d B
R e tu rn L os s > 8 d B
TABLE II
ELECTRICAL CHA RACTERIST ICS
(Ta = 25 0C Nominal)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2004
3
TGS4307-EPU
Prelimi nary Measured Data
Bias: 1.3V @ 40mA
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specif ica tions.
Specifications are subject to change without notice
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
65 67 69 71 73 75 77 79 81 83 85 87 89 91
Frequency (GHz)
Insertion Loss (dB)
Recei ve Path
Transmi t Path
LO Path
-80
-70
-60
-50
-40
-30
-20
-10
0
65 67 69 71 73 75 77 79 81 83 85 87 89 91
Frequency (GHz)
Isolation (dB)
An t / Ant
Sou rce / An t
Sou rce / L O
Sou rce / RX
Ant/Ant
Source/LO
Source/RX
Source/Ant
LO Path
Receive Path
Transmit Path
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specif ica tions.
Specifications are subject to change without notice
Prelimi nary Measured Data
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
65 67 69 71 73 75 77 79 81 83 85 87 89 91
Frequency (GHz)
Return Lo ss (dB)
RL @ RX P ort
RL @ Antenna Port
Antenna 3 to RX Port
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
65 67 69 71 73 75 77 79 81 83 85 87 89 91
Freque nc y (GHz)
Return Loss (dB)
RL @ Antenna Port
RL @ Source Port
Source Port to Antenna 1
TGS4307-EPU
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2004
5
TGS4307-EPU
Prelimi nary Measured Data
Source Port to LO Port
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
65 67 69 71 73 75 77 79 81 83 85 87 89 91
Fre quency (GHz)
Return Loss (dB)
RL @ LO Port
RL @ Source Port
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specif ica tions.
Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2004
6
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specif ica tions.
Specifications are subject to change without notice
TGS4307-EPU
1
2
34
5
6
7
8
9
10
11
0
0
0.103
(0.004) 0.341
(0.013) 0.717
(0.028) 1.657
(0.065) 1.760
(0.069)
0.103
(0.004)
0.335
(0.013)
0.775
(0.031)
1.274
(0.050)
1.873
(0.074)
2.038
(0.080)
1.638
(0.064)
1.230
(0.048)
0.880
(0.035)
0.123
(0.005)
2.160
(0.085)
2.058
(0.081)
1.870
(0.074)
1.274
(0.050)
0.463
(0.018)
0.123
(0.005)
Units: millimeter s (inches)
Thickness: 0.1016 (0.004)
Chip edge to bond pad di mensions are shown to center of bond pads
Chip siz e to lera n ce: +/- 0.0 5 (0.002)
GND IS BACKSIDE OF MMIC
Bond Pad # 1 (Antenna Port 1)
Bond Pad # 2 (VB1)
Bond Pad # 3 (Antenna Port 2)
Bond Pad # 4 (VB2)
Bond Pad # 5 (VB3)
Bond Pad # 6 (Antenna Port 3)
Bond Pad # 7 (VB5)
Bond Pad # 8 (Source Port)
Bond Pad # 9 (LO Po rt)
Bond Pad # 10 (VB4)
Bond Pad # 11 (Receiv er Port)
0.100 x 0.100 (0.004 x 0.004)
0.140 x 0.100 (0.006 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.100 x 0.140 (0.004 x 0.006)
0.140 x 0.100 (0.006 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.140 x 0.100 (0.006 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.100 x 0.140 (0.004 x 0.006)
0.100 x 0.100 (0.004 x 0.004)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2004
7
TGS4307-EPU
Assembly Drawing
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specif ica tions.
Specifications are subject to change without notice
B1 B2 B3
B4 B5
Note: Unused Ports should be terminated with 50 .
Substrate: GaAs
r=12.9
Thickness=4mil
Note: Ribbon bond is acceptable
(instead of 3 bondwires)
Recommended Interconnect Scheme
Substrate: Alumina
r=9.8
Thickness=5mil
Exter nal Interface (TF N ) Switch MMIC
Microstrip Trace
Width=120mm (50 )
3 Bondwire s
Gap ~4mil
Diameter=0.7mil
Height < 1 mil
5mil
3mil
RF I/O Pad
TFN
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2004
8
Function Selected Antenna
(B1, B2, or B3) Unused Antennas
(B1, B2, or B3) B4 B5
Transmit -5 to 0V +10mA each +20mA 0V
Receive -5 to 0V +10mA each 0V +20mA
Bias State Table
Forward voltage is ~ +1.3V to achieve bi as current
Applicati on Schem atic
TGS4307-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specif ica tions.
Specifications are subject to change without notice
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
J1
TGS4307
J3
J2
J6
IF
J5
J4
RX Port
Source
Port
LO Port
B1 B3
B2
B4
B5
B4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2004
9
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGS4307-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specif ica tions.
Specifications are subject to change without notice
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 3000C (30 seconds max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is crit ical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Wedge bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 2000C.
