ZXMS6005DN8Q-13 - DIODES INC

ZXMS6005DN8Q

Document number: DS38927 Rev. 2 - 2

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ZXMS6005DN8Q

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

IntelliFET MOSFET

Product Summary

 Continous Drain-Source Voltage: 60V

 On-State Resistance: 200mΩ

 Nominal Load Current (VIN = 5V): 1.8A

 Clamping Energy: 120mJ

Description

The ZXMS6005DN8Q is a dual self-protected low side IntelliFETTM

MOSFET with logic level input. It integrates overtemperature,

overcurrent, overvoltage (active clamp) and ESD protected logic level

functionality. The ZXMS6005DN8Q is ideal as a general purpose

switch driven from 3.3V or 5V microcontrollers in harsh environments

where standard MOSFETs are not rugged enough.

Applications

 Lamp Driver

 Motor Driver

 Relay Driver

 Solenoid Driver

Features and Benefits

 Low Input Current

 Logic Level Input (3.3V and 5V)

 Short Circuit Protection with Auto Restart

 Overvoltage Protection (Active Clamp)

 Thermal Shutdown with Auto Restart

 Overcurrent Protection

 Input Protection (ESD)

 High Continuous Current Rating

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish

 Weight: 79.1mg (Approximate)

Ordering Information (Note 5)

Part Number

Marking

Reel Size (inches)

Tape Width (mm)

Quantity per Reel

ZXMS6005DN8Q-13

6005DN8

13

12

2,500 units

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Top View

SO-8

D2

S2

IN2

D1

S1

IN1

= Manufacturer’s Marking

6005DN8 = Product Type Marking Code

YYWW = Date Code Marking

YY: Year

WW: Week: 01~52;

52 Represents 52 and 53 Week

IntelliFET is a trademark of Diodes Incorporated.

6005DN8

YYWW

S1

IN1

S2

IN2

D1

D2

D1

D2

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ZXMS6005DN8Q

Functional Block Diagram

Application Information

 Two Completely Isolated Independent Channels

 Especially Suited for Loads with a High In-rush Current Such as Lamps and Motors

 All Types of Resistive, Inductive and Capacitive Loads in Switching Applications

 μC Compatible Power Switch for 12V and 24V DC Applications

 Replaces Electromechanical Relays and Discrete Circuits

 Linear Mode Capability — the current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation

The maximum DC operating current is therefore determined by the thermal capability of the package or board combination, rather than by the

protection circuitry. This does not compromise the product’s ability to self-protect at low VDS.

Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)

Characteristic

Symbol

Value

Unit

Continuous Drain-Source Voltage

VDS

60

V

Drain-Source Voltage For Short Circuit Protection

VDS(SC)

16

V

Continuous Input Voltage

VIN

-0.5 to +6

V

Continuous Input Current @-0.2V ≤ VIN ≤ 6V

Continuous Input Current @VIN< -0.2V or VIN> 6V

IIN

No Limit

│IIN│≤ 2

mA

Pulsed Drain Current @VIN = 3.3V

IDM

5

A

Pulsed Drain Current @VIN = 5V

IDM

6

A

Continuous Source Current (Body Diode) (Note 6)

IS

2.5

A

Pulsed Source Current (Body Diode)

ISM

10

A

Unclamped Single Pulse Inductive Energy,

TJ = +25°C, ID = 0.5A, VDD = 24V

EAS

120

mJ

Electrostatic Discharge (Human Body Model)

VHBM

4,000

V

Charged Device Model

VCDM

1,000

V

Note: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

ZXMS6005DN8Q

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Recommended Operating Conditions

The ZXMS6005DN8Q is optimized for use with µC operating from 3.3V and 5V supplies.

Characteristic

Symbol

Min

Max

Unit

Input Voltage Range

VIN

0

5.5

V

Ambient Temperature Range

TA

-40

+125

°C

High Level Input Voltage for MOSFET to be On

VIH

3

5.5

V

Low Level Input Voltage for MOSFET to be Off

VIL

0

0.7

V

Peripheral Supply Voltage (Voltage to which load is referred)

VP

0

16

V

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation at TA = +25°C (Note 6)

Linear Derating Factor

PD

1.21

9.7

W

mW/°C

Power Dissipation at TA = +25°C (Note 7)

Linear Derating Factor

PD

1.56

12.5

W

mW/°C

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

103

°C/W

Thermal Resistance, Junction to Ambient (Note 7)

RθJA

81

°C/W

Thermal Resistance, Junction to Case (Note 8)

RθJC

13.5

°C/W

Operating Temperature Range

TJ

-40 to +150

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Notes: 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

8. Thermal resistance between junction and the mounting surfaces of drain and source pins.

Single Pulse

TA = 25°C

25 x 25 x 1.6mm FR-4

Single 1oz Cu

One active die

TA = 25°C

25 x 25 x 1.6mm FR-4

Single 1oz Cu

One active die

Single Pulse

TA = 25°C

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Notes:

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Static Characteristics

Drain-Source Clamp Voltage

VDS(AZ)

60

65

70

V

ID = 10mA

Off-State Drain Current

IDSS

—

1

µA

VDS = 12V, VIN = 0V

—

2

VDS = 36V, VIN = 0V

Input Threshold Voltage

VIN(TH)

0.7

1

1.5

V

VDS = VGS, ID = 1mA

Input Current

IIN

—

60

100

µA

VIN = 3V

—

120

200

VIN = 5V

Input Current while Over-Temperature Active

—

300

µA

VIN = 5V

Static Drain-Source On-State Resistance

RDS(ON)

—

170

250

mΩ

VIN = 3V, ID = 1A

—

150

200

VIN = 5V, ID = 1A

Continuous Drain Current (Note 6)

ID

1.4

—

A

VIN = 3V; TA = +25°C

1.6

—

VIN = 5V; TA = +25°C

Continuous Drain Current (Note 7)

1.7

—

VIN = 3V; TA = +25°C

1.8

—

VIN = 5V; TA = +25°C

Current Limit (Note 9)

ID(LIM)

2.2

5

—

A

VIN = 3V

3.3

7

—

VIN = 5V

Dynamic Characteristics

Turn On Delay Time

tD(ON)

—

6

—

µs

VDD = 12V, ID = 0.5A, VGS = 5V

Rise Time

tR

—

14

—

µs

Turn Off Delay Time

tD(OFF)

—

34

—

µs

Fall Time

tF

—

19

—

µs

Over-Temperature Protection

Thermal Overload Trip Temperature (Note 10)

TJT

+150

+175

—

°C

—

Thermal Hysteresis (Note 10)

∆TJT

—

+10

—

°C

—

9. The drain current is restricted only when the device is in saturation (see graph “Typical Output Characteristic”). This allows the device to be used in the

onstate without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside

saturation makes current limit unnecessary.

10. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal

operating range, so this part is not designed to withstand over-temperature for extended periods.

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Typical Characteristics

IS, Source Current (A)

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Typical Characteristics (Cont.)

-50 0 50 100 150 200 250 300

0

2

4

6

8

10

12

-50 0 50 100 150 200 250 300

0

2

4

6

8

10

12

0 5 10 15

0

2

4

6

8

Switching Speed

VIN

Drain-Source Voltage (V)

Time (s)

VDS

ID=1A VDS

VIN

Switching Speed

Drain-Source Voltage (V)

Time (s)

ID=1A

Typical Short Circuit Protection

VIN = 5V

VDS = 15V

RD = 0

ID Drain Current (A)

Time (ms)

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Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SO-8

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SO-8

1

b

e

E

A

A1

9° (All sides)

4°± 3°

c

Q

h

45°

R 0.1

7°

D

E0

E1

L

Seating Plane

Gauge Plane

CX

Y

Y1

X1

SO-8

Dim

Min

Max

Typ

A

1.40

1.50

1.45

A1

0.10

0.20

0.15

b

0.30

0.50

0.40

c

0.15

0.25

0.20

D

4.85

4.95

4.90

E

5.90

6.10

6.00

E1

3.80

3.90

3.85

E0

3.85

3.95

3.90

e

--

1.27

h

-

--

0.35

L

0.62

0.82

0.72

Q

0.60

0.70

0.65

All Dimensions in mm

Dimensions

Value (in mm)

C

1.27

X

0.802

X1

4.612

Y

1.505

Y1

6.50

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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