DG2034E
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Power Down Fault Protected,
1.8 V to 5.5 V, 2.5 , 4-Channel (4:1) Multiplexer
DESCRIPTION
The DG2034E is a four-channel multiplexer that operates
with a single 1.8 V to 5.5 V power supply. It features power
down fault protection that prevents excessive current flow
when V+ is to ground.
The device’s low power dissipation and wide voltage range
make it ideal for use in battery powered products. The ultra
low capacitance and charge injection of the switch make it
an ideal solution for data acquisition and sample and hold
applications, where low glitch and fast settling are required.
Low switch resistance and fast switching speeds, together
with high signal bandwidth, make the DG2034E suitable for
video signal switching.
The DG2034E switches one of four inputs to a common
output as determined by the 3-bit binary address lines: A0,
A1, and EN. Each switch conducts equally well in both
directions when on, blocks input voltages up to the supply
level when off, and exhibits break before make switching
action.
The device’s high ESD and latch-up current capability make
it more reliable in designs where the part sits close to the
interface.
The DG2034E is available in MSOP10 and QFN12
3 mm x 3 mm packages.
FEATURES
•2.5 switch on-resistance
7 pF source-off capacitance
27 pF comm-off capacitance
33 pF comm-on capacitance
13 ns turn-on time
-2 pC charge injection
-67 dB off-isolation at 1 MHz
-71 dB crosstalk at 1 MHz
166 MHz bandwidth
•8 kV ESD / HBM
400 mA latch-up current
BENEFITS
Power down fault protection
Low parasitic and charge injection
Wide operation voltage range
High ESD tolerance
APPLICATIONS
Automatic test equipment
Process control and automation
Data acquisition systems
Meters and instruments
Medical and healthcare systems
Communication systems
Audio and video switching
Relay replacements
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic
GND COM
S3 S4
S1 S2
1
2
3
9
8
7
456
12 11 10
EN NC V+
Top V i ew
12-Pin QFN (3 mm x 3 mm)
A0 NC A1
A1
S2
COM
1
2
3
10
9
Top View
A0
S1
GND 8
MSOP-10
S4
V+
4
5
7
S3
EN 6
Logic
DG2034E
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Notes
a. Signals on SX, COM, EN or AX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 16.2 mV/°C above 70 °C
d. Derate 4 mV/°C above 70 °C
TRUTH TABLE
A1 A0 EN ON SWITCH
XX0None
001S1
011S2
101S3
111S4
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to +85 °C
MSOP-10 DG2034EDQ-T1-GE3
12-pin QFN
(3 mm x 3 mm) DG2034EDN-T1-GE4
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
Referenced V+ to GND -0.3 to +6 V
AX, EN, SX, COM a-0.3 to (V+ + 0.3)
Continuous current (any terminal) ± 50 mA
Peak current (pulsed at 1 ms, 10 % duty cycle) ± 100
Power dissipation (package) bQFN-12 (3 mm x 3 mm) c1295 mW
MSOP-10 d320
Storage temperature (D suffix) -65 to +150 °C
ESD / HBM EIA / JESD22-A114-A 8k V
ESD / CDM EIA / JESD22-C101-A 2k
Latch up JESD78 400 mA
DG2034E
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Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. VA, EN = input voltage to perform proper function
f. Difference of min. and max. values
g. Guaranteed by 5 V testing
SPECIFICATIONS (V+ = 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 3 V, ± 10 %, VAL = 0.5 V, VAH = 1.5 V e
TEMP. a
LIMITS
-40 to +85 °C UNIT
MIN. cTYP. bMAX. c
Analog Switch
Analog signal range dVANALOG Full 0 - V+ V
Drain-source
On-resistance RDS(on)
V+ = 1.8 V, VS = 0.4 V / V+, IS = 8 mA Room - 7 10
Full - - 11
V+ = 2.7 V, VCOM = 0.8 V / 1.8 V ICOM = 10 mA Room - 4.6 5.3
Full - - 5.9
On-resistance matching RDS(on) V+ = 2.7 V, VCOM = 0.8 V / 1.4 V / 1.8 V
ICOM = 10 mA
Room - 0.02 0.27
Full - - 0.41
On-resistance flatness d, f R
flat(on)
Room - 0.62 1
Full - - 1.3
Off leakage current gIS(off) V+ = 3.3 V, VS = 1 V / 3 V
VCOM = 3 V / 1 V, VEN = 0 V
Room -2 0.01 2
nA
Full -5 - 5
COM off leakage current gICOM(off)
Room -2 0.01 2
Full -5 - 5
Channel-on leakage current gICOM(on) V+ = 3.3 V
VCOM = VS = 1 V / 3 V
Room -2 0.01 2
Full -5 - 5
Digital Control
Input current dIA or IEN VA/EN = 0 V or V+, see truth table Full -1 0.05 1 μA
Input high voltage dVAH or VENH Full 1.5 1.25 - V
Input low voltage dVAL or VENL Full - 1 0.5
Digital input capacitance dCIN Room - 3 - pF
Dynamic Characteristics
Turn-on time tON
VS = 1.5 V, CL = 35 pF, RL = 300
Room - 19 29
ns
Full - - 39
Turn-off time tOFF
Room - 16 26
Full - - 36
Break-before-make time dtBBM
Room 7 12 -
Full 5 - -
Transition time ttrans VS = 1.5 V / 0 V, VS = 0 V / 1.5 V, RL = 300 Room - 26 41
Full - - 51
Charge injection dQINJ CL = 1 nF, Vgen = 1.5 V, Rgen = 0 Room - -2 - pC
Bandwidth dBW CL = 5 pF (set up capacitance) Room - 166 - MHz
Off-isolation dOIRR RL = 50 , CL = 5 pF f = 1 MHz Room - -67 -
dB
f = 10 MHz Room - -52 -
Channel-to-channel crosstalk dXTALK RL = 50 , CL = 5 pF f = 1 MHz Room - -71 -
f = 10 MHz Room - -55 -
Off capacitance dCS(off)
V+ = 2.7 V, f = 1 MHz
Room - 7 -
pFCOM off capacitance dCCOM(off) Room - 27 -
COM on capacitance dCCOM(on) Room - 33 -
Power Supply
Power supply range V+ Full 2.7 - 3.3 V
Power supply current dI+ V+ = 2.7 V, VA/EN = 0 V or 2.7 V, see truth table Full - - 1 μA
DG2034E
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Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. VA, EN = input voltage to perform proper function
f. Difference of min. and max. values
g. Guaranteed by 5 V testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 5 V, ± 10 %, VAL = 0.5 V, VAH = 2 V eTEMP. a
LIMITS
-40 to +85 °C UNIT
MIN. cTYP. bMAX. c
Analog Switch
Analog signal range dVANALOG Full 0 - V+ V
Drain-source
On-resistance RDS(on) V+ = 4.5 V, VCOM = 0.8 V / 3.5 V
ICOM = 10 mA
Room - 2.5 3.1
Full - - 4
On-resistance matching RDS(on) V+ = 4.5 V, VCOM = 0.8 V / 2.5 V / 3.5 V
ICOM = 10 mA
Room - 0.02 0.29
Full - - 0.42
On-resistance flatness d, f R
flat(on)
Room - 0.6 0.9
Full - - 1.2
Off leakage current gIS(off) V+ = 5.5 V, VS = 1 V / 4.5 V
VCOM = 4.5 V / 1 V, VEN = 0 V
Room -2 0.17 2
nA
Full -8 - 8
COM off leakage current gICOM(off)
Room -5 0.77 5
Full -15 - 15
Channel-on leakage current gICOM(on) V+ = 5.5 V, VCOM = VS = 1 V / 4.5 V Room -5 0.61 5
Full -15 - 15
Power down leakage dIPD
V+ = 0 V, VD = 5.5 V, SX open Full - 0.01 5 μA
V+ = 0 V, VS = 5.5 V, COM, open Full - 0.01 5
Digital Control
Input current dIA or IEN VA/EN = 0 V or V+, see truth table Full - 0.01 1 μA
Input high voltage dVAH or VENH Full 2 1.76 - V
Input low voltage dVAL or VENL Full - 1.3 0.5
Digital input capacitance dCIN Room - 3 - pF
Dynamic Characteristics
Turn-on time tON
VS = 3 V, CL = 35 pF, RL = 300
Room - 13 25
ns
Full - - 35
Turn-off time tOFF
Room - 12 20
Full - - 30
Break-before-make time dtBBM
Room 4 10 -
Full 3 - -
Transition time ttrans VS = 3 V / 0 V, VS = 0 V / 3 V, RL = 300 Room - 17 32
Full - - 42
Propagation delay dtPD V+ = 5 V, no RLOAD Room - 537 - ps
Charge injection dQINJ CL = 1 nF, Vgen = 2.5 V, Rgen = 0 Room - -2.6 - pC
Bandwidth dBW CL = 5 pF (set up capacitance) Room - 166 - MHz
Off-isolation dOIRR RL = 50 , CL = 5 pF f = 1 MHz Room - -67 -
dB
f = 10 MHz Room - -52 -
Channel-to-channel crosstalk dXTALK RL = 50 , CL = 5 pF f = 1 MHz Room - -71 -
f = 10 MHz Room - -55 -
Off capacitance dCS(off)
V+ = 5 V, f = 1 MHz
Room - 7 -
pFCOM off capacitance dCCOM(off) Room - 27 -
COM on capacitance dCCOM(on) Room - 36 -
Power Supply
Power supply range V+ Full 4.5 - 5.5 V
Power supply current dI+ V+ = 5.5 V, VA/EN = 0 V or 5.5 V, see truth table Full - - 1 μA
DG2034E
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
Leakage Current vs. Temperature
Leakage Current vs. Temperature
Supply Current vs. Temperature
10
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
012345
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
V+ = +1.8 V
V+ = +2.7 V
V+ = +3 V
V+ = +4.5 V
V+ = +5 V
IS= 10 mA
10
100
1000
10000
1
2
3
4
5
6
7
0 0.5 1 1.5 2 2.5 3
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +2.7 V
IS= 10 mA
10
100
1000
10000
0
1
2
3
4
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +4.5 V
IS= 10 mA
10
100
1000
10000
-15000
-13000
-11000
-9000
-7000
-5000
-3000
-1000
1000
-40-20 0 20406080100
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
Temperature (°C)
2nd line
ICOM(OFF),V
COM = 4.5 V, VS= 1 V
ICOM(ON),V
COM = 4.5 V
IS(OFF),V
COM = 1 V, VS= 4.5 V
IS(OFF),V
COM = 4.5 V, VS= 1 V
ICOM(ON),V
COM = 1 V
ICOM(OFF),V
COM = 1 V,
VS= 4.5 V
V+ = +5.5 V
10
100
1000
10000
-800
-600
-400
-200
0
200
-40-20 0 20406080100
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
Temperature (°C)
2nd line
ICOM(OFF),V
COM = 3 V, VS= 1 V
ICOM(ON),V
COM = 3 V
IS(OFF),V
COM = 1 V, VS= 3 V
IS(OFF),V
COM = 3 V, VS= 1 V
ICOM(ON),V
COM = 1 V
ICOM(OFF),V
COM = 1 V, VS= 3 V
V+ = +3.3 V
10
100
1000
10000
0
1
2
3
4
5
6
7
8
9
10
-40-20 0 20406080100
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (nA)
Temperature (°C)
2nd line
V+ = +2.7 V
V+ = +5.5 V
VA/EN = V+
DG2034E
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Switching Time vs. Temperature
Switching Time vs. Temperature
Switching Time vs. Temperature
Loss, OIRR, XTALK vs. Frequency
Positive Supply Current vs. Switching Frequency
Switching Threshold vs. Supply Voltage
10
100
1000
10000
10
12
14
16
18
20
22
24
-50-25 0 255075100
Axis Title
1st line
2nd line
2nd line
tON(EN), tOFF(EN) - Switching Time (ns)
Temperature (°C)
2nd line
V+ = +3 V, t
ON
V+ = +3 V, t
OFF
V+ = +5 V, t
ON
V+ = +5 V, t
OFF
10
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
-50 -25 0 25 50 75 100
Axis Title
1st line
2nd line
2nd line
tBBM - Switching Time (ns)
Temperature (°C)
2nd line
V+ = +5 V
V+ = +3 V
10
100
1000
10000
0
5
10
15
20
25
30
35
40
-50 -25 0 25 50 75 100
Axis Title
1st line
2nd line
2nd line
tTRANS - Switching Time (ns)
Temperature (°C)
2nd line
V+ = +5 V
V+ = +3 V
10
100
1000
10000
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
100K 1M 10M 100M 1G
Axis Title
1st line
2nd line
2nd line
Loss, OIRR, XTALK (dB)
Frequency (Hz)
2nd line
OIRR
V+ = +5 V
Loss
XTALK
10
100
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10 100 1000 10K 100K 1M 10M
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (μA)
V
A/EN
Switching Frequency (Hz)
2nd line
V+ = +5 V
V+ = +2.7 V
10
100
1000
10000
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
123456
Axis Title
1st line
2nd line
2nd line
VT- Switching Threshold (V)
V+ - Supply Voltage (V)
2nd line
-40 °C to +85 °C
VIH = -40 °C
VIL = 85 °C
DG2034E
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Charge Injection vs. Source Voltage Positive Supply Current vs. Logic Voltage
Leakage Current vs. Analog Voltage
10
100
1000
10000
-40
-30
-20
-10
0
10
20
0123456
Axis Title
1st line
2nd line
2nd line
QINJ - Charge Injection (pC)
VS- Analog Voltage (V)
2nd line
V+ = 5 V
V+ = 3 V
V+ = 1.8 V
10
100
1000
10000
0.001
0.01
0.1
1
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (μA)
VA/EN (V)
2nd line
V+ = 2.7 V
V+ = 5 V
-16 000
-14 000
-12 000
-10 000
-8000
-6000
-4000
-2000
0
2000
4000
0123456
Leakage Current (pA)
V
D
- Analog Voltage (V)
IS(off)
ICOM
(on)
V+ = +5.5 V
ICOM(off)
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TEST CIRCUITS
Fig. 1 - Switching Time
Fig. 2 - Break-Before-Make
Fig. 3 - Transition Time
Logic
Input
Switch
Output
50 %
0 V
tr < 5 ns
tf < 5 ns
90 %
tOFF
tON
VOUT
Note: Logic input waveform is inverted for switches that
have the opposite logic sense control
CL (includes fixture and stray capacitance)
V+
IN
RL
RL + rON
VOUT = VIN
NO or NC COM VOUT
GND
CL
35 pF
RL
300
V+
VIN
Switch
Input
Switch
Output
VINH
VINL
0.9 x VOUT
CL (includes fixture and stray capacitance)
NC
VNO
NO
VNC
0 V
Logic
Input
Switch
Output
VO
VNC = VNO
tr < 5 ns
tf < 5 ns
90 %
tDtD
IN
COM
V+
GND
V+
CL
35 pF
VO
RL
300
VINH
VINL
CL (includes fixture and stray capacitance)
RL
RL + rON
VO = VS
V+
IN
CL
35 pF
RL
300
VO
VS2
VS1
GND
+15 V
50 %
Logic
Input
Switch
Output
VS1
tr < 5 ns
tf < 5 ns
10 %
tTRANS+
90 %
V01
VS2
V02
tTRANS-
NO or NC COM
NC or NO
VINH
VINL
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TEST CIRCUITS
Fig. 4 - Charge Injection
Fig. 5 - Crosstalk
Fig. 6 - Off Isolation Fig. 7 - Source / Drain Capacitances
CL
1 nF
Rg
VO
V+
COM
IN
Vg
GND
OFFONOFF
VO
VO
IN
IN dependent on switch configuration Input polarity determined
by sense of switch.
V+
VIN = 0 - V+
Q = VO x CL
NO or NC
NO or NC
XTALK Isolation = 20 log
VOUT
VIN
C = RF bypass
COM
VS
0 V or 2.4 V
IN
50
Rg = 50
V+
GND
C
V+
VIN
NC or NO
VOUT
RL
50
COM
0 V, 2.4 V
V+
Rg = 50
GND
Off Isolation = 20 log
VCOM
VNO/NC
IN
NO or NC
C
C = RF Bypass
NO or NC
IN
COM
V+
GND
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
C
V+
f = 1 MHz
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TEST CIRCUITS
Fig. 8 - Source / Drain Power Down Leakage
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73172.
+
-
5.5 V A
IN
NC, NO, Sx
V+
V+
GND
COM
V+
+
-
5.5 V
A
IN
NC, NO, Sx
V+
V+
GND
COM
V+
NOTES:
1. Die thickness allowable is 0.203"0.0127.
2. Dimensioning and tolerances per ANSI.Y14.5M-1994.
3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are
measured at Datum plane -H- , mold flash or protrusions shall not exceed
0.15 mm per side.
4. Dimension is the length of terminal for soldering to a substrate.
5. Terminal positions are shown for reference only.
6. Formed leads shall be planar with respect to one another within 0.10 mm at
seating plane.
7. The lead width dimension does not include Dambar protrusion. Allowable
Dambar protrusion shall be 0.08 mm total in excess of the lead width
dimension at maximum material condition. Dambar cannot be located on the
lower radius or the lead foot. Minimum space between protrusions and an
adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”.
8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip.
9. Controlling dimension: millimeters.
10. This part is compliant with JEDEC registration MO-187, variation AA and BA.
11. Datums -A- and -B- to be determined Datum plane -H- .
12. Exposed pad area in bottom side is the same as teh leadframe pad size.
5
N N-1 A B C 0.20
(N/2) Tips)
2X
N/221
0.60
0.50
0.60
E
Top V iew
e
See Detail “B”
-H-
3
D-A-
Seating Plane
A1
A
6
C0.10
Side View
0.25
BSC
T4
L-C-
Seating Plane
0.07 R. Min
2 Places
Parting Line
Detail “A”
(Scale: 30/1)
0.48 Max
Detail “B”
(Scale: 30/1)
Dambar Protrusion
7
C0.08 MBSAS
b
b1
With Plating
Base Metal
c1c
Section “C-C”
Scale: 100/1
(See Note 8)
See Detail “A”
A20.05 S
C
C
ς
3
E1-B-
End View
e1
0.95
Package Information
Vishay Siliconix
Document Number: 71245
12-Jul-02 www.vishay.com
1
MSOP: 10−LEADS
JEDEC Part Number: MO-187, (Variation AA and BA)
N = 10L
MILLIMETERS
Dim Min Nom Max Note
A- - 1.10
A10.05 0.10 0.15
A20.75 0.85 0.95
b0.17 - 0.27 8
b10.17 0.20 0.23 8
c0.13 - 0.23
c10.13 0.15 0.18
D3.00 BS C 3
E4.90 BSC
E12.90 3.00 3.10 3
e0.50 BSC
e12.00 BSC
L0.40 0.55 0.70 4
N10 5
T0_4_6_
ECN: T-02080—Rev. C, 15-Jul-02
DWG: 5867
NOTES:
1. All dimensions are in millimeters.
2. N is the total number of terminals.
3. Dimension b applies to metallized terminal and is measured
between 0.25 and 0.30 mm from terminal tip.
4. Coplanarity applies to the exposed heat sink slug as well as the
terminal.
5. The pin #1 identifier may be either a mold or marked feature, it
must be located within the zone iindicated.
3
Terminal Tip
D2
D2/2
4
Exposed Pad
E2/2
E2
3
C0.10 MA B
4xb
2 x e
BOTTOM VIEW
TOP VIEW
-A-
-B-
E
D
D/2
E/2
C0.25
C0.25
-C-
C0.08
C0.10//
SEATING
PLANE
A3
A1A
4NX
SIDE VIEW
BB
CC
AA
DD
Pin #1 Identifier
L
e
2 x e
Package Information
Vishay Siliconix
Document Number: 72209
14-Apr-03 www.vishay.com
1
QFN−12 LEAD (3 X 3)
MILLIMETERS INCHES
Dim Min Nom Max Min Nom Max
A0.80 0.90 1.00 0.032 0.035 0.039
b0.18 0.23 0.30 0.007 0.009 0.012
D3.00 BS C 0.118 BSC
D2 1.00 1.15 1.25 0.039 0.045 0.049
E3.00 BSC 0.118 BSC
E2 1.00 1.15 1.25 0.039 0.045 0.049
e0.50 BSC 0.02 BSC
L0.45 0.55 0.65 0.018 0.022 0.026
AA 0.435 0.017
BB 0.435 0.017
CC 0.18 0.007
DD 0.18 0.007
ECN: C-03092—Rev. A, 14-Apr-03
DWG: 5898
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Revision: 08-Feb-17 1Document Number: 91000
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