DATA SH EET
Product specification
Supersedes data of 2002 Mar 14 2003 Apr 10
DISCRETE SEMICONDUCTORS
PDTA143X series
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
2003 Apr 10 2
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
FEATURES
•Built-in bias resistors
•Simplified circuit design
•Reduction of component count
•Reduced pick and place costs.
APPLICATIONS
•General purpose switching and amplification
•Inverter and interface circuits
•Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
SYMBOL PARAMETER TYP. MAX. UNIT
VCEO collector-emitter
voltage −−50 V
IOoutput current (DC) −−100 mA
R1 bias resistor 4.7 −kΩ
R2 bias resistor 10 −kΩ
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER PACKAGE MARKING CODE NPN COMPLEMENT
PHILIPS EIAJ
PDTA143XE SOT416 SC-75 35 PDTC143XE
PDTA143XEF SOT490 SC-89 41 PDTC143XEF
PDTA143XK SOT346 SC-59 25 PDTC143XK
PDTA143XM SOT883 SC-101 DN PDTC143XM
PDTA143XS SOT54 (TO-92) SC-43 TA143X PDTC143XS
PDTA143XT SOT23 −*31(1) PDTC143XT
PDTA143XU SOT323 SC-70 *46(1) PDTC143XU
2003 Apr 10 3
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING
PIN DESCRIPTION
PDTA143XS 1 base
2 collector
3 emitter
PDTA143XE 1 base
PDTA143XEF 2 emitter
PDTA143XK 3 collector
PDTA143XT
PDTA143XU
PDTA143XM 1 base
2 emitter
3 collector
handbook, halfpage
MAM338
1
2
3
R1
R2
2
3
1
handbook, halfpage
MDB271
Top view
12
3
1
2
3
R1
R2
handbook, halfpage
MDB267
2
1
3
Bottom view
1
2
3
R1
R2
2003 Apr 10 4
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −−50 V
VCEO collector-emitter voltage open base −−50 V
VEBO emitter-base voltage open collector −−10 V
VIinput voltage
positive −+7 V
negative −−20 V
IOoutput current (DC) −−100 mA
ICM peak collector current −−100 mA
Ptot total power dissipation Tamb ≤25 °C
SOT54 note 1 −500 mW
SOT23 note 1 −250 mW
SOT346 note 1 −250 mW
SOT323 note 1 −200 mW
SOT416 note 1 −150 mW
SOT490 notes 1 and 2 −250 mW
SOT883 notes 2 and 3 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT416 note 1 833 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W
2003 Apr 10 5
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB =−50 V; IE=0 −−−100 nA
ICEO collector-emitter cut-off current VCE =−30 V; IB=0 −−−1µA
V
CE =−30 V; IB= 0; Tj= 150 °C−−−50 µA
IEBO emitter-base cut-off current VEB =−5 V; IC=0 −−−600 µA
hFE DC current gain VCE =−5 V; IC=−10 mA 50 −−
V
CEsat collector-emitter saturation voltage IC=−10 mA; IB=−0.5 mA −−−150 mV
Vi(off) input-off voltage IC=−100 µA; VCE =−5V −−0.9 −0.3 V
Vi(on) input-on voltage IC=−20 mA; VCE =−0.3 V −2.5 −1.5 −V
R1 input resistor 3.3 4.7 6.1 kΩ
resistor ratio 1.7 2.1 2.6
Cccollector capacitance IE=i
e= 0; VCB =−10 V; f = 1 MHz −−3pF
R2
R1
--------
2003 Apr 10 6
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
PACKAGE OUTLINES
UNIT A1
max bpcDEe
1H
EL
pQw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
wM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
vMA
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface mounted package; 3 leads SOT416
97-02-28
2003 Apr 10 7
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
UNIT bpcDE e1HELpwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
98-10-23
IEC JEDEC EIAJ
mm 0.33
0.23 0.2
0.1 1.7
1.5 0.95
0.75 0.5
e
1.0 1.7
1.5 0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490 SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
0.8
0.6
c
X
12
3
Plastic surface mounted package; 3 leads SOT490
2003 Apr 10 8
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
UNIT A1bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.50
0.35 0.26
0.10 3.1
2.7 1.7
1.3 0.95
e
1.9 3.0
2.5 0.33
0.23 0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346 TO-236 SC-59
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
A
B
0 1 2 mm
scale
A
1.3
1.0 0.1
0.013
c
X
12
3
Plastic surface mounted package; 3 leads SOT346
98-07-17
2003 Apr 10 9
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
UNIT A1
max.
A(1) bb
1e
1
eLL
1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46 0.20
0.12 0.55
0.47
0.03 0.62
0.55 0.35 0.65
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
0.30
0.22
0.30
0.22
SOT883 SC-101 03-02-05
03-04-03
DE
1.02
0.95
L
E
2
3
1
b
b1
A1
A
D
L1
0 0.5 1 mm
scale
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883
e
e1
2003 Apr 10 10
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43 97-02-28
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
2003 Apr 10 11
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2003 Apr 10 12
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
UNIT A1
max bpcD Ee
1
H
E
L
pQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
2003 Apr 10 13
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Apr 10 14
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
NOTES
2003 Apr 10 15
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩPDTA143X series
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/02/pp16 Date of release: 2003 Apr 10 Document order number: 9397 750 11044
Philips Semiconductors - PIP - PDTA143X series; PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm
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PDTA143X series;
PNP resistor-
equipped
transistors; R1 = 4.7
kOhm, R2 = 10
kOhm
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General description
PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).
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Philips Semiconductors - PIP - PDTA143X series; PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm
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Features
● Built-in bias resistors
● Simplified circuit design
● Reduction of component count
● Reduced pick and place costs.
top
Applications
● General purpose switching and amplification
● Inverter and interface circuits
● Circuit driver.
AN10116_2: Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their Applications (date 05-Aug-02)
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Datasheet
Type number Title Publication release
date Datasheet status Page
count File size
(kB) Datasheet
PDTA143X series PNP resistor-
equipped
transistors; R1 =
4.7 kOhm, R2 = 10
kOhm
4/10/2003 Product specification 16 84
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Philips Semiconductors - PIP - PDTA143X series; PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm
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Parametrics
Type number Package hFE
min hFE
max POLARITY IO
max(mA) VCEO
max(V) Ptot
max(mW) RES
RATIO Complement Input
Resistor(kOhm)
PDTA143XE SOT416
(EMT3,
SMPAK) 50 >50 PNP 100 50 150 2.1 PDTC143XE 4.7
PDTA143XEF SOT490
(SC-89) 50 >50 PNP -100 -50 250 2.1 PDTC143XEF 4.7
PDTA143XK SOT346
(SMT3,
MPAK) 50 >50 PNP 100 50 250 2.1 PDTC143XK 4.7
PDTA143XT SOT23
(SST3) 50 >50 PNP 100 50 250 2.1 PDTC143XT 4.7
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Products, packages, availability and ordering
Type number North American
type number Ordering code
(12NC) Marking/Packing
Download
PDF
File
Discretes packing
info
Package Device status Buy online
PDTA143XE PDTA143XE
T/R 9340 552 81115 Standard Marking *
Reel Pack, SMD
SOT416
(EMT3;
SMPAK) Full production
order this
product
online
-
PDTA143XE
/T3 9340 552 81135 Standard Marking *
Reel Pack, SMD,
Large
SOT416
(EMT3;
SMPAK) Full production
order this
product
online
-
PDTA143XEF PDTA143XEF
T/R 9340 570 05115 Standard Marking *
Reel Pack, SMD SOT490
(SC-89) Full production
order this
product
online
-
PDTA143XK PDTA143XK
T/R 9340 569 75115 Standard Marking *
Reel Pack, SMD
SOT346
(SMT3;
MPAK) Full production
order this
product
online
-
PDTA143XM 9340 571 67315 Standard Marking *
Reel Pack, SMD,
Pitch 2mm SOT883 Development -
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Philips Semiconductors - PIP - PDTA143X series; PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm
PDTA143XS 9340 575 63126 Standard Marking *
Ammopack, Radial SOT54
(SPT; E-1) Full production -
PDTA143XT PDTA143XT
T/R 9340 550 53215 Standard Marking *
Reel Pack, SMD,
Low Profile
SOT23
(SST3) Full production
order this
product
online
-
PDTA143XU 9340 575 36115 Standard Marking *
Reel Pack, SMD
SOT323
(UMT3;
CMPAK) Full production -
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