Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 GenX3TM 1200V IGBTs w/ Diode VCES = 1200V IC110 = 55A VCE(sat) 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 IC110 ILRMS ICM TC TC TC TC 125 55 120 400 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125C, RG = 3 Clamped Inductive Load ICM = 110 @ 0.8 * VCES A PC TC = 25C 460 W -55 ... +150 C = 25C ( Chip Capability ) = 110C = 25C (Lead RMS Limit) = 25C, 1ms TJ TJM 150 C Tstg -55 ... +150 C 300 260 C C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 G G VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V 3.0 5.0 IGES VCE = 0V, VGE = 20V VCE(sat) IC = IC110, VGE = 15V, Note 2 TJ = 125C 100 nA 1.85 1.90 2.3 E Tab E = Emitter Tab = Collector Features z z Optimized for Low Conduction Losses Anti-Parallel Ultra Fast Diode Advantages V z z z z z z z z z (c) 2010 IXYS CORPORATION, All Rights Reserved Tab High Power Density Low Gate Drive Requirement Applications V 100 A 2.0 mA Note 1, TJ = 125C C G = Gate C = Collector z Characteristic Values Min. Typ. Max. E E PLUS247TM (IXGX) z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100227(01/10) IXGK55N120A3H1 IXGX55N120A3H1 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = IC110, VCE = 10V, Note 2 Cies Coes TO-264 (IXGK) Outline 45 S 4340 pF 300 pF VCE = 25V, VGE = 0V, f = 1 MHz Cres 115 pF Qg(on) 185 nC Qge IC = IC110, VGE = 15V, VCE = 0.5 * VCES Qgc td(on) tri Inductive load, TJ = 25C 25 nC 75 nC 23 ns 42 ns Eon IC = IC110, VGE = 15V 5.1 mJ td(off) VCE = 0.8 * VCES, RG = 3 365 ns tfi Note 3 282 ns Eoff 13.3 mJ td(on) 24 ns tri Inductive load, TJ = 125C 46 ns Eon IC = IC110, VGE = 15V 9.5 mJ td(off) VCE = 0.8 * VCES, RG = 3 tfi Eoff Note 3 618 ns 635 ns 29.0 mJ Terminals: 1 = Gate 2 = Collector 3 = Emitter 0.27 C/W RthJC RthCK 0.15 C/W PLUS 247TM (IXGX) Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 2 trr IF = 60A, VGE = 0V, 200 ns IRM -diF/dt = 350A/s, VR = 600V, TJ = 100C 24.6 A 1.85 1.90 TJ = 150C RthJC 2.5 V V 0.42 C/W Notes: 1. Part must be heatsunk for high-temp Ices measurement. 2. Pulse test, t 300s, duty cycle, d 2%. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 = Gate 2 = Collector 3 = Emitter Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2