© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1200 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C ( Chip Capability ) 125 A
IC110 TC= 110°C 55 A
ILRMS TC= 25°C (Lead RMS Limit) 120 A
ICM TC= 25°C, 1ms 400 A
SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 110 A
(RBSOA) Clamped Inductive Load @ 0.8 • VCES
PCTC= 25°C 460 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C
MdMounting Torque ( IXGK ) 1.13/10 Nm/lb.in.
FCMounting Force ( IXGX ) 20..120/4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VGE(th) IC= 1mA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 100 μA
Note 1, TJ = 125°C 2.0 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= IC110, VGE = 15V, Note 2 1.85 2.3 V
TJ = 125°C 1.90
DS100227(01/10)
GenX3TM 1200V
IGBTs w/ Diode
IXGK55N120A3H1
IXGX55N120A3H1
VCES = 1200V
IC110 = 55A
VCE(sat) ≤ ≤
≤ ≤
≤ 2.3V
Ultra-Low-Vsat PT IGBTs for
up to 3kHz Switching
Features
zOptimized for Low Conduction Losses
zAnti-Parallel Ultra Fast Diode
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
zInrush Current Protection Circuits
G = Gate E = Emitter
C = Collector Tab = Collector
PLUS247TM (IXGX)
GCE Tab
TO-264 (IXGK)
E
G
CE Tab
Advance Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK55N120A3H1
IXGX55N120A3H1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = IC110, VCE = 10V, Note 2 30 45 S
Cies 4340 pF
Coes VCE = 25V, VGE = 0V, f = 1 MHz 300 pF
Cres 115 pF
Qg(on) 185 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 25 nC
Qgc 75 nC
td(on) 23 ns
tri 42 ns
Eon 5.1 mJ
td(off) 365 ns
tfi 282 ns
Eoff 13.3 mJ
td(on) 24 ns
tri 46 ns
Eon 9.5 mJ
td(off) 618 ns
tfi 635 ns
Eoff 29.0 mJ
RthJC 0.27 °C/W
RthCK 0.15 °C/W
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 0.8 • VCES, RG = 3Ω
Note 3
Inductive load, TJ = 125°C
IC = IC110, VGE = 15V
VCE = 0.8 • VCES, RG = 3Ω
Note 3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Notes:
1. Part must be heatsunk for high-temp Ices measurement.
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-264 (IXGK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
PLUS 247TM (IXGX) Outline
Terminals: 1 = Gate
2 = Collector
3 = Emitter
Terminals: 1 = Gate
2 = Collector
3 = Emitter
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VF IF = 60A, VGE = 0V, Note 2 1.85 2.5 V
TJ = 150°C 1.90 V
trr 200 ns
IRM 24.6 A
RthJC 0.42 °C/W
IF = 60A, VGE = 0V,
-diF/dt = 350A/μs, VR = 600V, TJ = 100°C
