WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES Access Times 20, 25, 35, 45ns Standard Microcircuit Drawing, 5962-92078 MIL-STD-883 Compliant Devices Available JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300) Commercial, Industrial and Military Temperature Range (-55C to +125C) Organized as 512K x 8 5V Power Supply Low Power CMOS TTL Compatible Inputs and Outputs Battery Back-Up Operation FIGURE 1 - PIN CONFIGURATION TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 PIN DESCRIPTION A0-18 I/O 0-7 CS# OE# WE# VCC GND VCC A15 A17 WE# A13 A8 A9 A11 OE# A10 CS# I/O7 I/O6 I/O5 I/O4 I/O3 Address Inputs Data Input/Output Chip Select Output Enable Write Enable +5.0V Power Ground BLOCK DIAGRAM A0-16 I/O0-7 WE# OE# 128K x 8 A17 A18 128K x 8 128K x 8 128K x 8 Decoder CS# Microsemi Corporation reserves the right to change products or specifications without notice. May 2011 Rev. 5 (c) 2011 Microsemi Corporation. All rights reserved. 1 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS512K8-XCX ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC Min -55 -65 -0.5 -0.5 TRUTH TABLE Max +125 +150 VCC+0.5 150 7.0 Unit C C V C V CS# H L L L OE# X L X H WE# X H L H Mode Standby Read Write Out Disable Data I/O High Z Data Out Data In High Z Power Standby Active Active Active CAPACITANCE RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Symbol VCC VIH VIL TA Min 4.5 2.2 -0.5 -55 Max 5.5 VCC + 0.3 +0.8 +125 (TA = +25C) Unit V V V C Parameter Input capacitance Output capicitance Symbol CIN COUT Condition VIN = 0V, f = 1.0MHZ VOUT = 0V, f = 1.0MHZ Max 45 45 Unit pF pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, -55C TA 125C) Parameter Symbol Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage ILI ILO ICC ISB VOL VOH -20 Conditions Min VCC = 5.5, VIN = GND to VCC CS# = VIH, OE# = VIH, VOUT = GND to VCC CS# = VIL, OE# = VIH, f = 5MHZ, VCC = 5.5 CS# = VIH, OE# = VIH, f = 5MHZ IOL = 8mA, VCC = 4.5 IOH = -4.0mA, VCC = 4.5 -25 Max 10 10 210 80 0.4 2.4 Min -35 Max 10 10 210 60 0.4 2.4 Min -45 Max 10 10 210 60 0.4 2.4 Min Max 10 10 210 55 0.4 2.4 Units A A mA mA V V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V DATA RETENTION CHARACTERISTICS FOR LOW POWER "L" VERSION (-55C TA 125C) Parameter Symbol Data Retention Supply Voltage Data Retention Current VDR ICCDR1 Conditions CS# * VCC -0.2V VCC = 3V Min 2.0 8.0 FIGURE 2 - AC TEST CIRCUIT Min 2.0 -25 Typ 8.0 Max 5.5 12.8 Min 2.0 -35 Typ 8.0 Max 5.5 12.8 Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level IOL Min 2.0 -45 Typ 8.0 Max 5.5 12.8 Units V mA Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. VZ 1.5V (Bipolar Supply) CEFF = 50 pf Max 5.5 12.8 AC TEST CONDITIONS Current Source D.U.T. -20 Typ IOH Current Source Microsemi Corporation reserves the right to change products or specifications without notice. May 2011 Rev. 5 (c) 2011 Microsemi Corporation. All rights reserved. 2 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS512K8-XCX AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, -55C TA 125C) Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Symbol tRC tAA tOH tACS tOE tCLZ1 tOLZ1 tCHZ1 tOHZ1 -20 Min -25 Max 20 Min -35 Max 25 3 3 45 3 35 25 3 0 15 12 Max 35 25 10 3 0 Min 45 25 20 10 3 0 -45 Max 35 20 3 Min 45 35 3 0 17 15 20 20 30 25 Units ns ns ns ns ns ns ns ns ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 5.0V, GND =0V, -55C TA 125C) Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time Symbol tWC tCW tAW tDW tWP tAS tAH tOW1 tWHZ1 tDH -20 Min -25 Max 20 16 16 15 16 2 2 4 10 1 Min 25 20 20 15 20 2 2 5 0 1 -35 Max 15 Min 35 25 25 20 25 2 2 5 0 1 -45 Max 20 Min 45 30 30 25 30 2 2 5 0 1 Max 25 Units ns ns ns ns ns ns ns ns ns ns 1. This parameter is guaranteed by design but not tested. Microsemi Corporation reserves the right to change products or specifications without notice. May 2011 Rev. 5 (c) 2011 Microsemi Corporation. All rights reserved. 3 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS512K8-XCX FIGURE 3 - TIMING WAVEFORM - READ CYCLE tRC ADDRESS tRC tAA ADDRESS CS# tAA tACS DATA I/O tCHZ tCLZ tOH PREVIOUS DATA VALID OE# DATA VALID tOE tOHZ tOLZ READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH) DATA I/O DATA VALID HIGH IMPEDANCE READ CYCLE 2 (WE# = VIH) FIGURE 4 - WRITE CYCLE - WE# CONTROLLED tWC ADDRESS tAW tAH tCW CS# tAS tWP WE# tOW tDW tWHZ tDH DATA VALID DATA I/O WRITE CYCLE 1, WE# CONTROLLED FIGURE 5 - WRITE CYCLE - CS# CONTROLLED tWC ADDRESS tAW tAS tAH tCW CS# tWP WE# tDW DATA I/O tDH DATA VALID WRITE CYCLE 2, CS# CONTROLLED Microsemi Corporation reserves the right to change products or specifications without notice. May 2011 Rev. 5 (c) 2011 Microsemi Corporation. All rights reserved. 4 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS512K8-XCX PACKAGE 300 - 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED 42.4 (1.670) 0.4 (0.016) 15.04 (0.592) 0.25 (0.012) 4.34 (0.171) 0.79 (0.031) 3.2 (0.125) MIN PIN 1 IDENTIFIER 0.25 (0.010) 0.05 (0.002) 0.84 (0.033) 0.4 (0.014) 2.5 (0.100) TYP 1.27 (0.050) 0.1 (0.005) 15.25 (0.600) 0.25 (0.010) 0.46 (0.018) 0.05 (0.002) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Microsemi Corporation reserves the right to change products or specifications without notice. May 2011 Rev. 5 (c) 2011 Microsemi Corporation. All rights reserved. 5 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS512K8-XCX ORDERING INFORMATION W S 512K 8 X - XXX C X X MICROSEMI CORPORATION SRAM ORGANIZATION, 512K x 8 OPTIONS Blank = Standard Power L = Low Power ACCESS TIME (ns) PACKAGE: C = Ceramic 0.600" DIP (Package 300) DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55C to +125C I = Industrial -40C to +85C C = Commercial 0C to +70C LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE TYPE SPEED PACKAGE SMD NO. 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM 45ns 35ns 25ns 20ns 32 pin DIP 32 pin DIP 32 pin DIP 32 pin DIP 5962-92078 06HTX 5962-92078 07HTX 5962-92078 08HTX 5962-92078 09HTX Microsemi Corporation reserves the right to change products or specifications without notice. May 2011 Rev. 5 (c) 2011 Microsemi Corporation. All rights reserved. 6 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS512K8-XCX Document Title 512Kx8 SRAM MODULE, SMD 5962-92078 Revision History Rev # History Release Date Status Rev 5 Changes (Pg. 1-7) May 2011 Final 5.1 Change document layout from White Electronic Designs to Microsemi 5.2 Add document Revision History page Microsemi Corporation reserves the right to change products or specifications without notice. May 2011 Rev. 5 (c) 2011 Microsemi Corporation. All rights reserved. 7 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com