ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 4500
V
IC = 1000
A
Doc. No. 5SYA 1597-00 Oct 07
• Ultra low-loss, rugged SPT+ chip-set
• Smooth switching SPT+ chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V 4500
V
DC collector current IC Tc = 85 °C 1000
A
Peak collector current ICM tp = 1 ms, Tc = 85 °C 2000
A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 10000
W
DC forward current IF 1000
A
Peak forward current IFRM 2000
A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 8000
A
IGBT short circuit SOA tpsc VCC = 3400 V, VCEM CHIP ≤ 4500 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Isolation voltage Visol 1 min, f = 50 Hz 7400
V
Junction temperature Tvj 150 °C
Junction operating temperature Tvj(op) -40 125 °C
Case temperature Tc -40 125 °C
Storage temperature Tstg -40 125 °C
Ms Base-heatsink, M6 screws 4 6
Mt1 Main terminals, M8 screws 8 10
Mounting torques 2) Mt2 Auxiliary terminals, M4 screws 2 3 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB HiPak
IGBT Module
5SNA 1000G450300
PRELIMINARY
5SNA 1000G450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1597-00 Oct 07 page 2 of 9
IGBT characteristic values 3)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 10 mA, Tvj = 25 °C 4500
V
Tvj = 25 °C 3.0 V
Collector-emitter 4)
saturation voltage VCE sat IC = 1000 A, VGE = 15 V Tvj = 125 °C 3.7 V
Tvj = 25 °C 12 mA
Collector cut-off current ICES VCE = 4500 V, VGE = 0 V Tvj = 125 °C 120 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C 5.5 7.0 V
Gate charge Qge IC = 1000 A, VCE = 2800 V,
VGE = -15 V .. 15 V 8100
µC
Input capacitance Cies 105.6
Output capacitance Coes 7.35
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 2.04 nF
Tvj = 25 °C 440
Turn-on delay time td(on) Tvj = 125 °C 560 ns
Tvj = 25 °C 180
Rise time tr
VCC = 2800 V,
IC = 1000 A,
RG = 1.5 Ω, CGE = 220 nF,
VGE = ±15 V,
Lσ = 150 nH, inductive load
Tvj = 125 °C 180 ns
Tvj = 25 °C 1450
Turn-off delay time td(off) Tvj = 125 °C 1950
ns
Tvj = 25 °C 600
Fall time tf
VCC = 2800 V,
IC = 1000 A,
RG = 1.5 Ω, CGE = 220 nF,
VGE = ±15 V,
Lσ = 150 nH, inductive load
Tvj = 125 °C 420 ns
Tvj = 25 °C 2300
Turn-on switching energy Eon
VCC = 2800 V,
IC = 1000 A,
RG = 1.5 Ω, CGE = 220 nF,
VGE = ±15 V,
Lσ = 150 nH, inductive load
Tvj = 125 °C 3000
mJ
Tvj = 25 °C 3150
Turn-off switching energy Eoff
VCC = 2800 V,
IC = 1000 A,
RG = 1.5 Ω, CGE = 220 nF,
VGE = ±15 V,
Lσ = 150 nH, inductive load
Tvj = 125 °C 4300
mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 3400 V, VCEM CHIP ≤ 4500 V 3360
A
Module stray inductance Lσ CE 18 nH
TC = 25 °C 0.07
Resistance, terminal-chip RCC’+EE’ T
C
= 125 °C 0.1 mΩ
3) Characteristic values according to IEC 60747 – 9
4) Collector-emitter saturation voltage is given at chip level
5SNA 1000G450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1597-00 Oct 07 page 3 of 9
Diode characteristic values 5)
Parameter Symbol Conditions min typ max
Unit
Tvj = 25 °C 3.1
Forward voltage 6) VF IF = 1000 A Tvj = 125 °C 3.4 V
Tvj = 25 °C 960
Reverse recovery current Irr Tvj = 125 °C 1200
A
Tvj = 25 °C 820
Recovered charge Qrr Tvj = 125 °C 1400
µC
Tvj = 25 °C 1500
Reverse recovery time trr Tvj = 125 °C 1900
ns
Tvj = 25 °C 1200
Reverse recovery energy Erec
VCC = 2800 V,
IF = 1000 A,
VGE = ±15 V,
RG = 1.5 Ω,
CGE = 220 nF,
Lσ = 150 nH
inductive load
Tvj = 125 °C 2330
mJ
5) Characteristic values according to IEC 60747 – 2
6) Forward voltage is given at chip level
Package properties 7)
Parameter Symbol Conditions min typ max
Unit
IGBT thermal resistance
junction to case Rth(j-c)IGBT 0.010
K/W
Diode thermal resistance
junction to case Rth(j-c)DIODE
0.020
K/W
IGBT thermal resistance 2)
case to heatsink Rth(c-s)IGBT
IGBT per switch, λ grease = 1W/m x K 0.009
K/W
Diode thermal resistance 7)
case to heatsink Rth(c-s)DIODE
Diode per switch, λ grease = 1W/m x K 0.019
K/W
Partial discharge extinction
voltage Ve f = 50 Hz, QPD ≤ 10pC (acc. to IEC 61287)
3500
V
Comparative tracking index CTI ≥ 600
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties 7)
Parameter Symbol Conditions min typ max
Unit
Dimensions L x W x H
Typical , see outline drawing 190 x 140 x 48 mm
Term. to base:
40
Clearance distance in air da according to IEC 60664-1
and EN 50124-1 Term. to term:
26 mm
Term. to base:
64
Surface creepage distance ds according to IEC 60664-1
and EN 50124-1 Term. to term:
56 mm
Mass m 1760
g
7) Package and mechanical properties according to IEC 60747 – 15
5SNA 1000G450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1597-00 Oct 07 page 4 of 9
Electrical configuration
5 7 9
4 6 8
2
1
3
Outline drawing 2)
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
5SNA 1000G450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1597-00 Oct 07 page 5 of 9
0
500
1000
1500
2000
0 1 2 3 4 5 6
V
CE
[V]
I
C
[A]
125 °C
25 °C
V
GE
= 15V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 1 2 3 4 5 6 7 8 91011121314
V
GE
[V]
I
C
[A]
V
CE
= 25 V
125 °C
25 °C
Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 1 2 3 4 5
V
CE
[V]
I
C
[A]
T
vj
= 25 °C
9V
11V
13V
15V
17V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0123456
V
CE
[V]
I
C
[A]
9V
T
vj
= 125 °C
11V
13V
15V
17V
Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level
5SNA 1000G450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1597-00 Oct 07 page 6 of 9
0
1
2
3
4
5
6
7
8
9
0500 1000 1500 2000
I
C
[A]
E
on
, E
off
[J]
V
CC
= 2800 V
V
GE
= ±15 V
R
G
= 1.5 ohm
C
GE
= 220 nF
T
vj
= 125 °C
L
σ
= 150 nH
E
on
E
off
E
sw
[J] = 1.43 x 10
-6
x I
C2
+ 4.68 x 10
-3
x I
C
+ 1.1
0
2
4
6
8
10
12
14
0246810 12 14 16
R
G
[ohm]
E
on
, E
off
[J]
V
CC
= 2800 V
I
C
= 1000 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 150 nH
C
GE
= 220 nF
E
on
E
off
Fig. 5 Typical switching energies per pulse
vs collector current Fig. 6 Typical switching energies per pulse
vs gate resistor
0.01
0.1
1
10
0500 1000 1500 2000
I
C
[A]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
V
CC
= 2800 V
R
G
= 1.5 ohm
C
GE
= 220 nF
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 150 nH
t
d(off)
t
f
t
d(on)
t
r
0.1
1
10
0246810 12 14 16
R
G
[ohm]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
V
CC
= 2800 V
I
C
= 1000 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 150 nH
C
GE
= 220 nF
t
d(off)
t
f
t
d(on)
t
r
Fig. 7 Typical switching times
vs collector current Fig. 8 Typical switching times
vs gate resistor
5SNA 1000G450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1597-00 Oct 07 page 7 of 9
1
10
100
1000
0 5 10 15 20 25 30 35
V
CE
[V]
C [nF]
C
ies
C
oes
C
res
V
GE
= 0V
f
OSC
= 1 MHz
V
OSC
= 50 mV
0
5
10
15
20
01234567
Q
g
[µC]
V
GE
[V ]
V
CC
= 2800 V
V
CC
= 3600 V
I
C
= 1000 A
T
vj
= 25 °C
Fig. 9 Typical capacitances
vs collector-emitter voltage Fig. 10 Typical gate charge characteristics
0
0.5
1
1.5
2
2.5
01000 2000 3000 4000 5000
V
CE
[V]
I
Cpulse
/ I
C
Chip
Module
V
CC
≤
3600 V, T
vj
= 125 °C
V
GE
= ±15 V, R
G
= 1.5 ohm, C
GE
= 220 nF
Fig. 11 Turn-off safe operating area (RBSOA)
5SNA 1000G450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1597-00 Oct 07 page 8 of 9
0
500
1000
1500
2000
2500
3000
0 500 1000 1500 2000
I
F
[A]
E
rec
[mJ], I
rr
[A] , Q
rr
[µC ]
I
rr
Q
rr
E
rec
V
CC
= 2800 V
V
GE
= ±15 V
R
G
= 1.5 ohm
C
GE
= 220 nF
T
vj
= 125 °C
L
σ
= 150 nH
E
rec
[mJ] = -597 x 10
-6
x I
F2
+ 2.46 x I
F
+ 413
0
500
1000
1500
2000
2500
0 1 2 3 4 5
di/dt [kA/µs]
E
rec
[mJ],I
rr
[A], Q
rr
[µC]
V
CC
= 2800 V
I
F
= 1000 A
T
vj
= 125 °C
L
σ
= 150 nH
C
GE
= 220 nF
E
rec
Q
rr
I
rr
R
G
= 6.8 ohm R
G
= 10 ohm
R
G
= 2.2 ohm
R
G
= 3.3 ohm
R
G
= 1.8 ohm
R
G
= 1.5 ohm
R
G
= 15 ohm
R
G
= 4.7 ohm
Fig. 12 Typical reverse recovery characteristics
vs forward current Fig. 13 Typical reverse recovery characteristics
vs di/dt
0
500
1000
1500
2000
012345
V
F
[V]
I
F
[A]
125 °C
25 °C
0
500
1000
1500
2000
0 1000 2000 3000 4000 5000
V
R
[V]
I
R
[A]
V
CC
≤
3600 V
di/dt
≤
5500 A/µs
T
vj
= 125 °C
L
σ
≤
150 nH
Fig. 14 Typical diode forward characteristics,
chip level Fig. 15 Safe operating area diode (SOA)
5SNA 1000G450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1597-00 Oct 07
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-(jth ∑
=
i
τ
i 1 2 3 4 5
Ri(K/kW) 6.95 2.3 1.13
IGBT
τi(ms) 192.6 21.4 2.78
Ri(K/kW) 13.6 4.75 2.34
DIODE
τi(ms) 191.5 22.5 3.1
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Z
th(j-c)
[K/W ] IG B T, DIODE
Z
th(j-c)
IGBT
Z
th(j-c)
Diode
Fig. 16 Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043-01 Load – cycle capability of HiPaks
• 5SZK 9120-00 Specification of environmental class for HiPak