2SK3081 Silicon N Channel MOS FET High Speed Power Switching REJ03G1064-0400 (Previous: ADE-208-636A) Rev.4.00 Sep 07,2005 Features * Low on-resistance RDS(on) = 10 m typ. * 4 V gate drive devices. * High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.4.00 Sep 07, 2005 page 1 of 6 2 3 S 2SK3081 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID Ratings 30 20 45 180 45 75 150 -55 to +150 ID(pulse)Note1 IDR Pch Note2 Tch Tstg Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 6 Symbol V(BR)DSS V(BR)GSS Min 30 20 20 Typ -- -- Max -- -- Unit V V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 IDSS IGSS VGS(off) RDS(on) -- -- 1.0 -- -- 20 -- -- -- -- -- -- -- -- -- -- -- -- 10 15 30 1570 1100 410 32 300 180 200 1.0 75 10 10 2.0 14 25 -- -- -- -- -- -- -- -- -- -- A A V m m m m S pF pF pF ns ns ns ns V ns VDS = 30 V, VGS = 0 VGS = 16 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V Note3 ID = 20 A, VGS = 4 V Note3 ID = 20 A, VDS = 10 V Note3 RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 20 A, RL = 0.5 IF = 45 A, VGS = 0 IF = 45 A, VGS = 0 diF/ dt = 50 A/ s 2SK3081 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 300 Drain Current ID (A) Channel Dissipation Pch (W) 100 75 50 25 0 50 100 150 10 s 100 10 30 DC = 0 s m s Op 10 m (T erat s c = io n 25 C ) 10 Operation in this area is limited by RDS(on) 3 1 0.3 Ta = 25C 1 shot pulse 0.1 0.1 0.3 1 200 PW 1 3 30 10 100 Case Temperature TC (C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V 8 V 100 100 Pulse Test 5V 80 Drain Current ID (A) Drain Current ID (A) 6V 4.5 V 60 4V 40 3.5 V 20 3V 25C Tc = -25 -25C 80 75C 60 40 20 VDS = 10 V Pulse Test VGS = 2.5 V 2 4 6 8 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.8 0.6 ID = 50 A 0.4 20 A 0.2 10 A 0 0 10 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.4.00 Sep 07, 2005 page 3 of 6 Static Drain to Source on State Resistance RDS (on) (m) Drain to Source Saturation Voltage VDS (on) (V) 0 100 Pulse Test 50 20 VGS = 4 V 10 V 10 5 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 30 10 A ID = 20 A 20 VGS = 4 V 50 A 10, 20 A 10 10 V 0 -40 0 40 80 120 160 50 20 10 75C 2 1 0.5 0.1 0.3 1 3 30 10 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 Capacitance C (pF) 500 200 100 50 20 di / dt = 50 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 2000 100 Ciss 1000 Coss 500 Crss 200 100 VGS = 0 f = 1 MHz 5 0 100 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 45 A 40 16 VGS VDD = 5 V 10 V 15 V VDS 20 12 8 10 4 VDD = 15 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) Rev.4.00 Sep 07, 2005 page 4 of 6 0 100 1000 Switching Time t (ns) 50 0 VDS = 10 V Pulse Test Drain Current ID (A) 10000 30 25C 5 1000 10 0.1 Tc = -25C Case Temperature TC (C) Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS (on) (m) 2SK3081 500 td(off) 200 tf 100 tr 50 td(on) VGS = 10 V, VDD = 10 V PW = 5 s, duty < 1 % 20 10 0.1 0.3 1 3 10 30 Drain Current ID (A) 100 2SK3081 (A) 100 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 80 10 V 5V VGS = 0, -5 V 60 40 20 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.67C/W, Tc = 25C 0.1 0.05 0.03 0.01 10 PDM 0.02 1 lse 0.0 t pu o h 1s D= PW T 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vout Vin 10 V PW T 50 VDD = 30 V 10% 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 5 of 6 10% tr 90% td(off) tf 2SK3081 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 0.2 11.5 Max 10.16 0.2 9.5 3.6 1.26 0.15 15.0 0.3 18.5 0.5 1.27 6.4 +0.2 -0.1 8.0 4.44 0.2 +0.1 -0.08 7.8 0.5 0.76 0.1 14.0 0.5 2.7 Max 1.5 Max 0.5 0.1 2.54 0.5 2.54 0.5 Ordering Information Part Name 2SK3081-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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