Rev.4.00 Sep 07, 2005 page 1 of 6
2SK3081
Silicon N Channel MOS FET
High Speed Power Switching REJ03G1064-0400
(Previous: ADE-208-636A)
Rev.4.00
Sep 07,2005
Features
• Low on-resistance
RDS(on) = 10 mΩ typ.
• 4 V gate drive devices.
• High speed switching
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
1. Gate
2. Drain
(Flange
)
3. Source
123
D
G
S
3
D
G
2SK3081
Rev.4.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID 45 A
Drain peak current ID(pulse)Note1 180 A
Body-drain diode reverse drain current IDR 45 A
Channel dissipation Pch Note2 75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V
RDS(on) — 10 14 mΩ I
D = 20 A, VGS = 10 V Note3
Static drain to source on state
resistance RDS(on) — 15 25 mΩ I
D = 20 A, VGS = 4 V Note3
Forward transfer admittance |yfs| 20 30 — S ID = 20 A, VDS = 10 V Note3
Input capacitance Ciss — 1570 — pF
Output capacitance Coss — 1100 — pF
Reverse transfer capacitance Crss — 410 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 32 — ns
Rise time tr — 300 — ns
Turn-off delay time td(off) — 180 — ns
Fall time tf — 200 — ns
VGS = 10 V, ID = 20 A,
RL = 0.5 Ω
Body–drain diode forward voltage VDF — 1.0 — V IF = 45 A, VGS = 0
Body–drain diode reverse
recovery time trr — 75 — ns IF = 45 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 3. Pulse test
Unit Test
30 — — V I
D
= 10 mA, V
G
=
±
100
— — 10
µ
A V
DS
±
10
µ
A V
1.0 — 2.0 V I
— 10 14 m
— 15 25 m
| 20 30 — S I
Ciss — 1570 — pF
Coss — 1100 — pF
Coss — 1100 — pF
Reverse transfer capacitance Crss — 410 — pF
d(on)
— 32 — ns
t
r
— 300 — ns
r — 300 — ns
r
t
d(off)
— 180 — ns
t
f
— 200 — ns
f — 200 — ns
f
Body–drain diode forward voltage V
DF
— 1.0 — V I
Body–drain diode reverse
t
— 75 — ns
2SK3081
Rev.4.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature T
C
(°C)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
75
50
25
050 100 150 200 0.1 0.3 1 310 30 100
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25°C
1 shot pulse
10 µs
100 µs
1 ms
PW = 10 ms
DC Operation
(Tc = 25°C)
Operation in
this area is
limited by RDS(on)
100
80
60
40
20
0246810
100
80
60
40
20
0246810
4 V
V
GS
= 2.5 V
6 V
8 V
5 V
4.5 V
10 V
Tc = –25°C25°C
75°C
3.5 V
3 V
V
DS = 10 V
Pulse Test
Pulse Test
1.0
0.8
0.6
0.4
0.2
048
12 16 20 1 10 100250
100
20
50
10
5205
Pulse Test
ID = 50 A
10 A
20 A
V
GS
= 4 V
10 V
Pulse Test
Drain to Source Voltage V
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
100
80
60
246810
GS
GS
= 2.5 V
Tc = –25
3 V
2SK3081
Rev.4.00 Sep 07, 2005 page 4 of 6
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
50
40
30
20
10
–40 0 40 80 120 160
00.1 0.3 1 3 10
10
5
1
2
0.5
V
GS
= 4 V
10 V
I
D
= 20 A 10 A
10, 20 A50 A
30
20
50
10
0
25°C
Tc = –25°C
75°C
V
DS
= 10 V
Pulse Test
Pulse Test
0.1 0.3 1 3 10 30 100 0 10 20 30 40 50
500
10000
1000
2000
5000
50
40
30
20
10
0
20
16
12
8
4
20 40 60 80 100
0
1000
500
100
200
20
50
10
0.1 0.3 3 10 100
1000
500
100
200
20
50
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C100
200
5
301
I
D
= 45 A
V
GS
V
DS
V
DD
= 5 V
10 V
15 V
V
DD
= 15 V
10 V
5 V
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
V
GS
= 10 V,
V
DD
= 10 V
PW = 5 µs, duty < 1 %
tr
td(on)
td(off)
tf
Typical Capacitance
vs. Drain to Source Voltage
Reverse Drain Current I
DR
(A)
Capacitance C (pF)
Dynamic Input Characteristics
0.1 0.3 1 3 10 30 100
500
1000
2000
5000
µ
s
= 0, Ta = 25
°
C
= 45 A
2SK3081
Rev.4.00 Sep 07, 2005 page 5 of 6
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.67°C/W, Tc = 25°C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
100
80
60
40
20
00.4 0.8 1.2 1.6 2.0
Pulse Test
V
GS
= 0, –5 V
5 V
10 V
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Waveform
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25
100
µ
1 m 10 m
θ γ θ
ch – c(t) = s (t)
θ γ θ
ch – c(t) = s (t)
θ
Switching Time Test Circuit
2SK3081
Rev.4.00 Sep 07, 2005 page 6 of 6
Package Dimensions
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 Max
1.5 Max
11.5 Max
9.5
8.0
1.27
6.4
+0.2
–0.1
φ 3.6
+0.1
–0.08
Package Name
PRSS0004AC-A TO-220AB / TO-220ABV
MASS[Typ.]
1.8gSC-46
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK3081-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
0.5 ± 0.1
Quantity
Note: For some grades, production may be terminated. Please
production before ordering the product.
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diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
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The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
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5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
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cannot be imported into a country other than the approved destination.
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8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas T
echnology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating
in the use of any product data,
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i
nformation on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvement
s or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distrib
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Techn
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a
evaluate all information as a total system before making a final decision on the applicability of the information and products.
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materi
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a lic
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com/en/network
" for the latest and detailed information.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071