A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 36 V
BVCES IC = 50 mA 36 V
BVCEO IC = 50 mA 18 V
BVEBO IE = 10 mA 4.0 V
ICES VCE = 12.5 V 5.0 mA
hFE VCE = 5.0 V IC = 5.0 A 20 200 ---
COB VCB = 12.5 V f = 1.0 MHz 165 pF
PG
η
ηη
ηC VCC = 12.5 V POUT = 40 W f = 88 MHz 10
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VMB40-12F
DESCRIPTION:
The ASI VMB40-12F is Designed for
12.5 V, Medium Band Class C
Applications.
FEATURES:
• Common Emitter
• PG = 10 dB @ 40W/175MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 5.0 A
VCBO 36 V
VCEO 18 V
VEBO 4.0 V
PDISS 70 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 2.5 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10743
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
