BUL1203EFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■HIGH VOLTAGE CAPABILITY
■LOW SPREAD OF DYNAMIC PARAMETERS
■MINIM UM LO T- TO- LO T SPR E AD FO R
REL IABLE OPERATIO N
■VERY HIGH SWITCHING SPEED
■FULLY INS ULAT E D PA CKAG E (U. L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
■ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
DESCRIPTION
The BUL1203EFP is a new device manufac tured
using Diffused Collector technology to enhance
switching speeds and tight hFE range while
mainta ining a wide RBSO A .
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in t ypical converters
for lamp ballast.
®
INTERNAL SCHEMATI C DI AG RAM
November 2003
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCBO Collector-BaseVoltage (IE = 0) 1200 V
VCES Collector-Emitter Voltage (VBE = 0) 1200 V
VCEO Collector-Emitter Voltage (IB = 0) 550 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
ICCollector Current 5 A
ICM Collector Peak Current (tp < 5 ms) 8 A
IBBase Current 2 A
IBM Base Peak Current (tp < 5 ms) 4 A
Ptot Total Dissipation at Tc = 25 oC36W
V
isol Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink 1500 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
TO-220FP
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 3.47
62.5
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 1200 V 100 µA
ICEO Collector Cut-off
Current (IB = 0) VCE = 550 V 100 µA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA L = 25 mH 550 V
VEBO Emitter-Base Voltage
(IC = 0) IE = 10 mA 9 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A
IC = 3 A IB = 1 A
0.5
0.7
1.5
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 2 A IB = 0.4 A
IC = 3 A IB = 1 A 1.5
1.5 V
V
hFE∗DC Current Gain IC = 1 mA VCE = 5 V
IC = 10 mA VCE = 5 V
IC = 0.8 A VCE = 3 V
IC = 2 A VCE = 5 V
10
10
14
932
28
ton
ts
tf
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
IC = 2 A IB1 = 0.4 A
IB2 = -0.8 A tp = 30 µs
VCC = 150 V (see figure 2) 2.5
0.2
0.5
3.0
0.3
µs
µs
µs
Ear Repetitive Avalanche
Energy L = 2 mH C = 1.8 nF
VCC = 50 V VBE = -5 V
(see figure 3)
6mJ
∗ P ulsed: P ulse durati on = 300 µs, duty cycle 1.5 %
Safe O perat ing Area Derating Curve
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DC Current Gain DC Current Ga in
C ollector -Em itter Sat uration Volt ag e Base- Em itter Saturat ion Voltage
Induct ive Lo ad St orage Tim e Induct ive Load Fall Time
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Figure 1: Induct ive Load Switching Test Circu it
Reverse Biased Safe Operating Area
Figure 2: Resist ive Load Switching Tes t Circuit
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Figure 3: Ener gy Rating Tes t Circuit
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
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Information furnished is b elieved to be accurate a nd relia ble. However, STMicroelectronics assumes no responsibility for the c onsequ ences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird pa rties w hich m ay resu lt from i ts use . No li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publicati on are
subject t o cha nge without notice. This publication supersedes and r eplaces al l information previously supplied. S TMicroelectronics p roducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 S TMicroelectronics – All Rights reserved
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