Single N-channel Trench MOSFET 30V, 47.6A, 9.0m General Description Features The MDU1516 uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1516 is suitable device for DC/DC Converter and general purpose applications. D D D D D D D D S S S G G S S S VDS = 30V ID = 47.6A @VGS = 10V RDS(ON) < 9.0 m @VGS = 10V < 14.0 m @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V 20 V VGSS TC=25oC TC=70oC Continuous Drain Current (1) o TA=25 C 47.6 38.0 ID TA=70oC Pulsed Drain Current 14.9(3) IDM o TC=25 C TC=70oC Power Dissipation o TA=25 C Single Pulse Avalanche Energy Junction and Storage Temperature Range 100 A 35.7 PD TA=70oC (2) A 18.6(3) 22.8 W 5.5(3) 3.5(3) EAS 53.0 TJ, Tstg -55~150 Symbol Rating RJA 22.7 RJC 3.5 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Feb. 2014. Version 1.3 1 Unit o C/W MagnaChip Semiconductor Ltd. MDU1516 - Single N-Channel Trench MOSFET 30V MDU1516 Part Number Temp. Range Package Packing Quantity Rohs Status MDU1516URH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.9 2.7 - - 1 - - 5 - - 0.1 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V TJ=55oC VGS = 20V, VDS = 0V VGS = 10V, ID = 14A Drain-Source ON Resistance Forward Transconductance - 7.8 9.0 - 11.3 13.0 VGS = 4.5V, ID = 11A - 11.7 14.0 VDS = 5V, ID = 10A - 31 - 11.0 14.6 18.3 5.2 6.9 8.6 - 3.0 - - 2.6 - 662 882 1103 TJ=125oC RDS(ON) gfs V A m S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 14A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz nC Reverse Transfer Capacitance Crss 65 86 108 Output Capacitance Coss 134 178 223 Turn-On Delay Time td(on) - 10.3 - - 10.6 - - 23.0 - - 7.4 - 2.0 3.0 4.5 - 0.8 1.1 V - 19.5 29.3 ns - 11.0 16.5 nC Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS = 15.0V, ID = 14A , RG = 3.0 tf Rg f=1 MHz VSD IS = 14A, VGS = 0V pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 14A, dl/dt = 100A/s Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 18A, VDD = 27V, VGS = 10V 3. T < 10sec. Feb. 2014. Version 1.3 2 MagnaChip Semiconductor Ltd. MDU1516 - Single N-Channel Trench MOSFET 30V Ordering Information VGS = 10V Drain-Source On-Resistance [m] 4.0V ID, Drain Current [A] 4.5V 5.0V 20 3.5V 10 3.0V 0 0.0 VGS = 4.5V 12 VGS = 10V 8 4 0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 15 20 25 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 100 Notes : Notes : 1. VGS = 10 V 2. ID = 16.0 A 1.6 ID = 14.0A RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 30 ID, Drain Current [A] VDS, Drain-Source Voltage [V] 1.4 1.2 1.0 0.8 0.6 -50 80 60 40 TA = 25 20 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 16 Notes : Notes : VGS = 0V 1 IDR, Reverse Drain Current [A] ID, Drain Current [A] VDS = 5V 12 8 TA=25 4 0 0 1 2 3 4 TA=25 0 10 -1 10 0.3 5 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics Feb. 2014. Version 1.3 10 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDU1516 - Single N-Channel Trench MOSFET 30V 16 30 1200 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Note : ID = 14A VDS = 15V Ciss 8 VGS, Gate-Source Voltage [V] MDU1516 - Single N-Channel Trench MOSFET 30V 10 Capacitance [pF] 900 6 4 600 Notes ; Coss 300 1. VGS = 0 V 2. f = 1 MHz 2 Crss 0 0 0 4 8 12 16 0 5 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 15 20 25 30 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 60 2 10 ms 50 10 1s 1 ID, Drain Current [A] ID, Drain Current [A] 100 ms 10s DC 10 10 Operation in This Area is Limited by R DS(on) 0 10 30 20 10 Single Pulse TJ=Max rated TC=25 -1 40 -1 10 0 10 1 10 0 25 2 50 150 10 ZJA(t), Thermal Response ZJC(t), Thermal Response 125 1 1 10 0 10 D=0.5 0.2 -1 100 Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 10 75 TA, Case Temperature [] VDS, Drain-Source Voltage [V] 0.1 0.05 0.02 0.01 -2 10 ? Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * ZJC * RJC(t) + TC 0 10 D=0.5 0.2 0.1 -1 10 0.05 0.02 0.01 -2 10 * Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * ZJA * RJA(t) + TA single pulse single pulse -3 -3 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve (Junction-to-Case) Feb. 2014. Version 1.3 -4 10 10 Fig.12 Transient Thermal Response Curve (Junction-to-Ambient) 4 MagnaChip Semiconductor Ltd. PowerDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Dimension MILLIMETERS Min Max A 0.90 1.10 b 0.33 0.51 C 0.20 0.34 D1 4.50 5.10 D2 - 4.22 E 5.90 6.30 E1 5.50 6.10 E2 - 4.30 e Feb. 2014. Version 1.3 5 1.27BSC H 0.41 0.71 K 0.20 - L 0.51 0.71 0 12 MagnaChip Semiconductor Ltd. MDU1516 - Single N-Channel Trench MOSFET 30V Package Dimension MDU1516 - Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Feb. 2014. Version 1.3 6 MagnaChip Semiconductor Ltd.