Preliminary Technical Information TrenchMVTM Power MOSFET IXTA220N075T7 VDSS ID25 RDS(on) = 75 V = 220 A 4.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M VGSM 75 75 V V Transient 20 V ID25 ILRMS IDM TC = 25C Package Current Limit, RMS TC = 25C, pulse width limited by TJM 220 120 600 A A A IAR EAS TC = 25C TC = 25C 25 1.0 A J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS TJ 175C, RG = 3.3 3 V/ns PD TC = 25C 480 W -55 ... +175 175 -55 ... +175 C C C 300 260 C C 3 g TJ TJM Tstg TL Tsold 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Weight Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BV DSS VGS = 0 V, ID = 250 A 75 VGS(th) VDS = VGS, ID = 250 A 2.0 IGSS VGS = 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 25 A, Note 1 V TJ = 150C 3.6 4.0 V 200 nA 5 250 A A 4.5 m TO-263 (7-lead) (IXTA..7) 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99693 (11/06) (c) 2006 IXYS All rights reserved IXTA220N075T7 Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 75 120 S 7700 pF 1100 pF 230 pF Ciss Coss TO-263 (7-lead) (IXTA 7) Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz C rss Max. td(on) Resistive Switching Times 29 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 65 ns td(off) RG = 3.3 (External) 55 ns 47 ns 165 nC 40 nC 50 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 0.31 C/W RthJC Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Source-Drain Diode Symbol Test Conditions TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0 V 220 A ISM Pulse width limited by TJM 600 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -dI/dt = 100 A/s VR = 40 V, VGS = 0 V 80 ns Notes: 1. Pulse test, t 300 s, duty cycle d 2 %. PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTA220N075T7 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 300 220 V GS = 10V 8V 7V 200 180 240 160 210 I D - Amperes I D - Amperes VGS = 10V 8V 7V 270 140 120 6V 100 80 180 150 6V 120 90 60 40 60 5V 5V 30 20 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 0.5 1 1.5 2.5 3 3.5 4 4.5 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150C 220 2.4 VGS = 10V 8V 7V 200 180 V GS = 10V 2.2 RDS(on) - Normalized 2 160 I D - Amperes 2 VDS - Volts VDS - Volts 140 120 6V 100 80 60 1.8 1.6 I D = 220A 1.4 I D = 110A 1.2 5V 1 40 0.8 20 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 140 2.6 External Lead Current Limit for TO-263 (7-Lead) 2.4 120 TJ = 175C 2 100 I D - Amperes RDS(on) - Normalized 2.2 VGS = 10V 15V - - - - - 1.8 1.6 1.4 1.2 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 40 1 20 TJ = 25C 0.8 0.6 0 0 30 60 90 120 150 180 I D - Amperes (c) 2006 IXYS All rights reserved 210 240 270 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA220N075T7 Fig. 8. Transconductance Fig. 7. Input Admittance 220 180 200 160 180 TJ = - 40C 140 25C g f s - Siemens I D - Amperes 160 140 120 100 80 40 150C 100 80 60 TJ = 150C 25C - 40C 60 120 40 20 20 0 0 3 3.5 4 4.5 5 5.5 0 6 20 40 60 80 Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 270 10 240 9 VDS = 37.5V I D = 25A 8 210 I G = 10mA 7 180 150 VGS - Volts I S - Amperes 100 I D - Amperes VGS - Volts TJ = 150C 120 90 TJ = 25C 6 5 4 3 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1.3 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Z(th)JC - C / W Capacitance - PicoFarads C iss 1,000 Coss Crss f = 1 MHz 100 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA220N075T7 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 70 75 65 70 VGS = 10V 65 VDS = 37.5V t r - Nanoseconds t r - Nanoseconds 60 RG = 3.3 55 50 45 40 I D = 50A 35 TJ = 25C 60 RG = 3.3 55 VGS = 10V 50 VDS = 37.5V 45 40 35 TJ = 125C 30 30 I D = 25A 25 25 20 20 25 35 45 55 65 75 85 95 105 115 125 24 26 28 30 32 TJ - Degrees Centigrade 220 td(on) - - - - 200 44 46 48 140 I D = 50A 120 I D = 25A 84 80 RG = 3.3, VGS = 10V VDS = 37.5V 47.5 t f - Nanoseconds 55 76 47.0 72 I D = 25A 46.5 68 46.0 64 45 100 40 80 35 60 45.0 56 30 40 44.5 52 20 44.0 25 2 4 6 8 10 12 14 16 18 I D = 50A 45.5 20 25 35 RG - Ohms 95 tf td(off) - - - - RG = 3.3, VGS = 10V 90 75 85 95 48 105 115 125 75 70 46 24 26 28 30 32 34 36 38 40 42 44 46 48 50 I D - Amperes 280 I D = 25A 150 250 130 220 I D = 50A 190 90 160 70 130 50 50 100 45 30 60 44 VDS = 37.5V 170 110 65 TJ = 25C 310 TJ = 125C, VGS = 10V 55 t d ( o f f ) - Nanoseconds TJ = 125C 340 td(off) - - - - tf 190 85 80 (c) 2006 IXYS All rights reserved 65 210 t d ( o f f ) - Nanoseconds t f - Nanoseconds VDS = 37.5V 45 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds 49 47 45 60 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 48 50 t d ( o f f ) - Nanoseconds 160 t d ( o n ) - Nanoseconds 60 t r - Nanoseconds 42 td(off) - - - - tf 48.0 180 VDS = 37.5V 50 40 48.5 TJ = 125C, VGS = 10V 65 38 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 75 70 36 I D - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 34 70 2 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_220N075T (61) 11-20-06-B.xls