© 2006 IXYS All rights reserved
DS99693 (11/06)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C75V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ75 V
VGSM Transient ± 20 V
ID25 TC= 25°C 220 A
ILRMS Package Current Limit, RMS 120 A
IDM TC= 25°C, pulse width limited by TJM 600 A
IAR TC= 25°C25A
EAS TC= 25°C 1.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 3 V/ns
TJ≤ 175°C, RG = 3.3 Ω
PDTC= 25°C 480 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
Tsold Plastic body for 10 seconds 260 °C
Weight 3g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA75V
VGS(th) VDS = VGS, ID = 250 μA 2.0 4.0 V
IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 5μA
VGS = 0 V TJ = 150°C 250 μA
RDS(on) VGS = 10 V, ID = 25 A, Note 1 3.6 4.5 mΩ
TrenchMVTM
Power MOSFET
Preliminary Technical Information
N-Channel Enhancement Mode
Avalanche Rated
IXTA220N075T7 VDSS =75 V
ID25 = 220 A
RDS(on) ≤≤
≤≤
≤4.5 mΩΩ
ΩΩ
Ω
TO-263 (7-lead) (IXTA..7)
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
1
7
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA220N075T7
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %.
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
TO-263 (7-lead) (IXTA 7) Outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10 V; ID = 60 A, Note 1 75 120 S
Ciss 7700 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1100 pF
Crss 230 pF
td(on) Resistive Switching Times 29 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 65 ns
td(off) RG = 3.3 Ω (External) 55 ns
tf47 ns
Qg(on) 165 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 40 nC
Qgd 50 nC
RthJC 0.31°C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0 V 220 A
ISM Pulse width limited by TJM 600 A
VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V
trr IF = 25 A, -dI/dt = 100 A/μs80ns
VR = 40 V, VGS = 0 V
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
© 2006 IXYS All rights reserved
IXTA220N075T7
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
220
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
00.511.522.533.544.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
180
200
220
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. RDS(on) Normalized to ID = 110A Value
vs. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 220A
I
D
= 110A
Fig. 5. RDS(on) Normalized to ID = 110A Value
vs. Drain Current
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 30 60 90 120 150 180 210 240 270 300
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V - - - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA220N075T7
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
220
33.5 44.55 5.56
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
30
60
90
120
150
180
210
240
270
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 37.5V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
© 2006 IXYS All rights reserved
IXTA220N075T7
IXYS REF: T_220N075T (61) 11-20-06-B.xls
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
25
30
35
40
45
50
55
60
65
70
75
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanosecond
s
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 37.5V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
25
30
35
40
45
50
55
60
65
70
75
2 4 6 8 101214161820
RG - Ohms
t
r
- Nanoseconds
20
40
60
80
100
120
140
160
180
200
220
t d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 37.5V
I
D
= 25A
I
D
= 50A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
44.0
44.5
45.0
45.5
46.0
46.5
47.0
47.5
48.0
48.5
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
f
- Nanoseconds
48
52
56
60
64
68
72
76
80
84
t d ( o f f ) - Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 37.5V
I
D
= 25A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
44
45
46
47
48
49
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
t
f
- Nanoseconds
45
50
55
60
65
70
75
80
85
90
95
t d ( o f f ) - Nanosecond
s
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 37.5V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
25
30
35
40
45
50
55
60
65
70
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 37.5V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
30
50
70
90
110
130
150
170
190
210
2 4 6 8 10 12 14 16 18 20
RG - Ohms
t
f
- Nanoseconds
70
100
130
160
190
220
250
280
310
340
t d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 37.5V
I
D
= 50A
I
D
= 25A
