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Description
The 20193 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60
watts minimum output power and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
60 Watts, 1.8–1.9 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
PTB 20193
60 Watts, 1.8–1.9 GHz
Cellular Radio RF Power Transistor
20193
LOT CODE
Package 20223
Typical Output Power vs. Input Power
10
20
30
40
50
60
70
135791113
Input Power (Wa tts)
Output Power (Watts)
VCC = 26 V
ICQ = 150 mA
f = 1.9 GH z
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 55 Vdc
Collector-Emitter Voltage VCES 55 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC8 Adc
Total Device Dissipation at Tflange = 25° C PD233 W
Above 25°C derate by 1.33 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70° C) RθJC 0.75 °C/W
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PTB 20193
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Frequency Z Source Z Load
GHz R jX R jX
1.80 4.0 -1.6 2.7 0.65
1.90 3.6 -.08 2.6 1.90
Z Source Z Load
Electrical Characteristics (100% Tested)
Characteristics Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 60 mA, RBE = 27 ΩV(BR)CER 55 — — Volts
Breakdown Voltage C to E VBE = 0 V, IC = 60 mA V(BR)CES 55 — — Volts
Breakdown Voltage E to B IC = 0 V, IE = 25 mA V(BR)EBO 4 5 — Volts
DC Current Gain VCE = 5 V, IC = 300 mA Hfe 20 50 120 —
RF Specifications (100% Tested)
Characteristics Symbol Min Typ Max Units
Gain
(VCC = 26 Vdc, Pout = 15 W, ICQ = 150 mA, f = 1.9 GHz) Gpe 8.0 8.5 — dB
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 150 mA, f = 1.9 GHz) P-1dB 60 — — Watts
Collector Efficiency
(VCC = 26 Vdc, Pout = 60 W, ICQ = 150 mA, f = 1.9 GHz) ηC43 — — %
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 30 W, ICQ = 150 mA, Ψ— — 5:1 —
f = 1.9 GHz—all phase angles at frequency of test)
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 60 W, ICQ = 150 mA)
Z0 = 50 Ω
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PTB 20193
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Int ermo dulation Distortion vs. Power O utput
-40
-38
-36
-34
-32
-30
-28
-26
0 102030405060
Output Power (Watts-PEP)
IMD (dBc)
VCC = 26 V
ICQ = 150 mA
f1 = 1.899 GH z
f2 = 1.900 GH z
Efficiency vs. O utput Power
0
10
20
30
40
50
60
20 25 30 35 40 45 50 55 60 65
Output Power (Watts)
Efficiency (%)
VCC = 26 V
ICQ = 150 mA
f = 1.9 GH z
Gain vs. Frequency
(as measured in a broadba nd circuit)
7.0
7.5
8.0
8.5
9.0
1800 1820 1840 1860 1880 1900
Frequency (MHz)
Gain (dB)
VCC = 26 V
ICQ = 150 mA
Pout =15 W
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20193 Uen Rev. A 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5/19/98
