D P-Pack G APL1001P S POWER MOS IV (R) 1000V 18.0A 0.60W HERMETIC PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APL1001P UNIT 1000 Volts Drain-Source Voltage 18 Continuous Drain Current @ TC = 25C 1 Amps IDM, lLM Pulsed Drain Current VGS Gate-Source Voltage 30 Volts Total Power Dissipation @ TC = 25C 520 Watts Linear Derating Factor 4.16 W/C PD TJ,TSTG TL 72 and Inductive Current Clamped -55 to 150 Operating and Storage Junction Temperature Range C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 1000 Volts ID(ON) On State Drain Current 18 Amps Symbol RDS(ON) IDSS IGSS VGS(TH) 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) Drain-Source On-State Resistance 2 TYP 0.60 (VGS = 10V, 0.5 ID [Cont.]) UNIT Ohms 25 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) A 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage MAX 2 (VDS = VGS, ID = 2.5mA) 100 nA 4 Volts MAX UNIT THERMAL CHARACTERISTICS Characteristic RQCS Case to Sink 0.24 C/W (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.06 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 8-2001 Junction to Case TYP Rev - RQJC MIN 050-5899 Symbol DYNAMIC CHARACTERISTICS Symbol APL1001P Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 6000 7200 Coss Output Capacitance VDS = 25V 775 1080 Reverse Transfer Capacitance f = 1 MHz 285 430 Turn-on Delay Time VGS = 15V 14 28 Crss td(on) tr Rise Time td(off) tf Turn-off Delay Time Fall Time VDD = 0.5 VDSS 14 28 ID = ID [Cont.] @ 25C 60 92 RG = 0.6W 14 20 TYP MAX UNIT pF ns SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 Test Conditions / Part Number MIN VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60C 325 Characteristic Safe Operating Area Watts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 D=0.5 0.1 0.2 0.1 0.05 0.01 0.005 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) q 0.3 0.05 0.02 0.01 0.001 10-5 t2 Peak TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 40 VGS= 15V, 10V, 8V, 7V & 6.5V 5.5 V 5.0 V 10 4.5 V 0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 8-2001 Rev 050-5899 6.0 V 20 0 10 40 VGS=6.5V, 7.0V, 8.0V, 10V & 15V 30 t1 Duty Factor D = t1/t2 SINGLE PULSE 30 6.0 V 5.5 V 20 5.0 V 10 4.5 V 0 UNIT 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 10 TJ = +125C 5 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 15 10 5 0 1.15 GS VGS=10V 1.10 1.00 0.80 0 10 20 30 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I D = 0.5 I D V GS [Cont.] = 10V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VGS=20V 0.90 25 2.0 1.5 1.0 0.5 1.1 1.0 0.9 0.8 0.7 0.6 -50 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 20,000 100 OPERATION HERE LIMITED BY RDS (ON) 10 1mS 10mS 1 100mS TC =+25C TJ =+150C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 10,000 100S Ciss C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) D 1.20 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE .1 = 10V @ 0.5 I [Cont.] 5,000 1,000 500 Coss Crss DC 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 8-2001 ID, DRAIN CURRENT (AMPERES) 20 NORMALIZED TO V Rev - 15 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 1.30 050-5899 ID, DRAIN CURRENT (AMPERES) TJ = -55C RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 20 BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) APL1001P APL1001P P-Pack Package Outline 41.53 (1.635) 41.02 (1.615) 35.18 (1.385) 34.67 (1.365) 3.43 (.135) 2.92 (.115) (4-Places) 9.27 (.365) 8.64 (.340) 1.40 (.055) 1.02 (.040) 28.70 (1.130) 28.45 (1.120) Drain Source 3.43 (.135) 2.92 (.115) (4-Places) 4.06 (.160) 3.81 (.150) (5 Places) 51.05 (2.01) 50.55 (1.99) 35.81 (1.41) 35.31 (1.39) 29.34 (1.155) 29.08 (1.145) 8-2001 Rev 050-5899 .635 (.025) .381 (.015) Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 Source Sense 11.63 (.458) 11.13 (.438) 5.33 (.210) 4.83 (.190) 4.39 (.173) 4.14 (.163) (4 Places) 12.45 (.490) 11.94 (.470) Gate 10.92 (.430) 10.67 (.420)