POWER MOS IV
®
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APL1001P 1000V 18.0A 0.60W
HERMETIC PACKAGE
N-CH AN NEL ENHANCEMENT MODE H IGH VOLTAGE POWER MOSFETS
G
D
S
050-5899 Rev - 8-2001
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1 and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APL1001P
1000
18
72
±30
520
4.16
-55 to 150
300
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 8V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
MIN TYP MAX
1000
18
0.60
25
250
±100
24
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
UNIT
Volts
Amps
Ohms
µA
nA
Volts
Symbol
VDSS
ID
IDM, lLM
VGS
PD
TJ,TSTG
TL
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 5792 15 15 FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
THERMAL CHARACTERISTICS
Symbol
RQJC
RQCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN TYP MAX
0.24
0.06
UNIT
°C/W
P-Pack
DYNAMIC CHARACTERISTICS APL1001P
1Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3See MIL-STD-750 Method 3471
SAFE OPERATING AREA CHARACTERISTICS
Test Conditions / Part Number
VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C Watts
050-5899 Rev - 8-2001
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
MIN TYP MAX
6000 7200
775 1080
285 430
14 28
14 28
60 92
14 20
UNIT
pF
ns
Symbol
SOA1
MIN TYP MAX
325
UNIT
Characteristic
Safe Operating Area
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
40
30
20
10
0
40
30
20
10
0
020406080100 0 4 8121620
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
6.0 V
5.0 V
5.5 V
4.5 V
VGS= 15V, 10V, 8V, 7V & 6.5V
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
ZqJC, THERMAL IMPEDANCE (°C/W)
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
6.0 V
5.0 V
5.5 V
4.5 V
VGS=6.5V, 7.0V, 8.0V,
10V & 15V
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
C, CAPACITANCE (pF) VGS(TH), THRESHOLD VOLTAGE BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED) VOLTAGE (NORMALIZED)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +125°C
TJ = +25°C TJ = -55°C
VGS=10V
VGS=20V
ID = 0.5 ID [Cont.]
VGS = 10V
Crss
Coss
Ciss
050-5899 Rev - 8-2001
20
15
10
5
0
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
.1
100µS
1mS
10mS
100mS
DC
OPERATION HERE
LIMITED BY RDS (ON)
TC =+25°C
TJ =+150°C
SINGLE PULSE
02468 010203040
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
1 10 100 1000 .01 .1 1 10 50
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20,000
10,000
5,000
1,000
500
100
NORMALIZED TO
VGS = 10V @ 0.5 ID [Cont.]
APL1001P
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
050-5899 Rev - 8-2001
P-Pack Package Outline
29.34 (1.155)
29.08 (1.145)
35.81 (1.41)
35.31 (1.39)
51.05 (2.01)
50.55 (1.99)
3.43 (.135)
2.92 (.115)
(4-Places)
11.63 (.458)
11.13 (.438) 12.45 (.490)
11.94 (.470)
35.18 (1.385)
34.67 (1.365)
41.53 (1.635)
41.02 (1.615)
3.43 (.135)
2.92 (.115)
(4-Places)
5.33 (.210)
4.83 (.190)
1.40 (.055)
1.02 (.040)
9.27 (.365)
8.64 (.340)
.635 (.025)
.381 (.015)
4.39 (.173)
4.14 (.163)
(4 Places)
Dimensions in Millimeters and (Inches)
28.70 (1.130)
28.45 (1.120)
4.06 (.160)
3.81 (.150)
(5 Places)
10.92 (.430)
10.67 (.420)
Drain Gate
Source Source Sense
APL1001P
