OP236TXV - Optek Technologies, Inc.

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A 03/09

Page 1 of 3

High Reliability Hermetic Infrared Emitting Diode

OP235, OP236 (TX, TXV)

Description:

Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic

metal TO-46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher

radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches

the spectral response of silicon phototransistors. Devices have lens cans that provide an 18° beam angle

between half power points, which facilitates the easy design of beam interrupt applications with the OP804 and

OP805 series of high reliability phototransistors.

TX and TXV devices are processed to OPTEK’s military screening program patterned after MIL-PRF -19 500. After

100% screening, Group A and B are performed on every lot and a Group C test is performed eve ry six months.

Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.

Contact your local representative or OPTEK for more information.

Features:

• TO-46 hermetically sealed package with lens

• Twice the power output of GaAs at same drive current

• Characterized to define infrared energy along mechanical axis of

device

• Narrow beam angle

• Processed to MIL-PRF-19500.

Applications:

• Non-contact reflective object sensor

• Assembly line automation

• Machine automation

• Machine safety

• End of travel sensor

• Door sensor

• Military and harsh environments

Part

Number

LED

Peak

Wavelength

Output Power

(mW/cm2)

Min / Max

IF (mA)

Typ / Max

Total

Beam

Angle

Lead

Length

OP235TX

890 nm

1.5 / NA

50 / 100 18° 0.50"

OP235TXV

OP236TX 3.5 / NA

OP236TXV

Pin # LED Sensor

1 Anode Collector / Cathode

2 Cathode Emitter / Anode

DIMENSIONS ARE IN:

INCHES

[ MILLIMETERS]

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A 03/09

Page 2 of 3

High Reliability Hermetic Infrared Emitting Diode

OP235, OP236 (TX, TXV)

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Storage Temperature Range -65o C to +150o C

Operating Temperature Range -55o C to +125o C

Reverse Voltage 2.0 V

Forward DC Current 100 mA

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1)

Power Dissipation 200 mW(2)

Notes:

1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

2. Derate linearly 2.00 mW/° C above 25° C.

3. EE(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of

1.429” (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in

diameter forming a 10° cone. EE(APT) is not necessarily uniform within the measured area.

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

EE(APT)

Apertured Radiant Incidence

OP235 (TX, TXV)

OP236 (TX, TXV)

1.5

3.5

mW/cm2 IF = 100 mA

Forward Voltage

1.1

1.3

0.9

2.0

2.2

1.8

IF = 100 mA

IF = 100 mA, TA = -55° C

IF = 100 mA, TA = 100° C

IR Reverse Current - - 100 µA VR= 2.0 V

λP Wavelength at Peak Emission - 890 - nm IF = 100 mA

β Spectral Bandwidth between

Half Power Points - 50 - nm IF = 100 mA

θHP Emission Angle at Half Power Points - 18 - Degree IF = 100 mA

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A 03/09

Page 3 of 3

High Reliability Hermetic Infrared Emitting Diode

OP235, OP236 (TX, TXV)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0 5 10 15 20 25 30 35 40 45 50

Forward Cur r ent ( m A)

Typic al For wa rd Voltage (V)

-60°C

-40°C

-20°C

0°C

20°C

40°C

60°C

80°C

100°C

120°C

Forward Voltage vs Forward Current

vs Temperature

0.0

0.5

1.0

1.5

2.0

2.5

0 102030405060708090100

Forward Current IF (mA)

Relative Output Power

-60°C

-40°C

-20°C

0°C

20°C

40°C

60°C

80°C

100°C

120°C

Normali z ed at 50 mA and 20° C

Optical Power vs Forward Current

vs Temperature

0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1 .4 '' 1.6 '' 1.8 '' 2.0 ''

Distan ce ( in ches )

Normalized Output Power

10 mA

20 mA

30 mA

40 mA

50 mA

60 mA

80 mA

100 mA

120 mA

Norma liz ed at 1.0" and 50 mA

Forward Current

Distance vs Output Power vs Forw ard

Current