• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make this
device ideal for high efficiency DC-DC Converters that
power the latest generation of mobile
microprocessors.
The IRF7805 offers maximum efficiency for mobile
CPU core DC-DC converters.
HEXFET® Chip-Set for DC-DC Converters
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
Device Features
IRF7805
www.irf.com 1
2/14/07
SO-8
IRF7805
VDS 30V
RDS(on) 11mΩ
Qg 31nC
Qsw 11.5nC
Qoss 36nC
Absolute Maximum Ratings
Parameter Units
VDS Drain-to-Source Voltage V
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
e
A
IDM Pulsed Drain Current
c
PD @TA = 25°C Power Dissipation
e
W
PD @TA = 70°C Power Dissipation
e
Linear Derating Factor W/°C
TJ Operating Junction and °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead
g
––– 20 °C/W
RθJA Junction-to-Ambient
eg
––– 50
Max.
13
10
100
± 12
30
-55 to + 150
2.5
0.02
1.6
PD – 91746E
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IRF7805
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Rθ is measured at TJ of approximately 90°C.
Devices are 100% tested to these parameters.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
BVDSS
D
ra
i
n-to-
S
ource
B
rea
kd
own
V
o
l
ta
g
e
h
30 ––– ––– V
RDS(on)
S
tat
i
c
D
ra
i
n-to-
S
ource
O
n-
R
es
i
stance
h
––– 9.2 11 mΩ
VGS(th)
G
ate
Th
res
h
o
ld V
o
l
ta
g
e
h
1.0 ––– 3.0 V
IDSS Drain-to-Source Leakage Current ––– ––– 70
––– ––– 10
––– ––– 150
IGSS Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Qg
T
ota
l G
ate
Ch
ar
g
e
h
––– 22 31
Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.7 –––
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 –––
Qgd Gate-to-Drain Charge ––– 6.8 –––
Qsw Switch Char
g
e (Qgs2 + Qgd)
h
––– 8.2 11.5
Qoss
O
utput
Ch
ar
g
e
h
––– 3.0 3.6 nC
RGGate Resistance 0.5 ––– 1.7 Ω
td(on) Turn-On Delay Time ––– 16 –––
trRise Time ––– 20 –––
td(off) Turn-Off Delay Time ––– 38 –––
tfFall Time ––– 16 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
ISContinuous Source Current 2.5
(Body Diode)
c
ISM Pulsed Source Current
(Body Diode)
VSD
Di
o
d
e
F
orwar
d V
o
l
ta
g
e
h
––– ––– 1.2 V
Qrr
R
everse
R
ecover
y Ch
ar
g
e
f
88
Qrr(s) Reverse Recovery Charge 55
(
w
i
t
h P
ara
ll
e
l S
c
h
ott
ky)
f
–––
106
ns
nC
nA
––– –––
––– –––
–––
––– –––
µA
nC
ns
A
VDS = 16V, VGS = 0V, IS = 7.0A
VDS = 16V, VGS = 0V, IS = 7.0A
ID = 7.0A
VDS = VGS, ID = 250µA
RG= 2Ω
VDS = 24V, VGS = 0V, TJ = 100°C
VDS = 24V, VGS = 0V
di/dt = 700A/µs
di/dt = 700A/µs (with 10BQ040)
TJ = 25°C, IS = 7.0A, VGS = 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VDS = 16V, VGS = 0V
VDD = 16V, VGS = 4.5V
e
ID = 7.0A
Conditions
Resistive Load
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 7.0A
d
VDS = 16V
VGS = 12V
VGS = -12V
VGS = 5.0V
VDS = 30V, VGS = 0V
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IRF7805
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 1. Normalized On-Resistance vs. Temperature
Typical Characteristics
0.1
1
10
0.4 0.5 0.6 0.7 0.8 0.9
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Fig 4. Typical Source-Drain Diode Forward Voltage
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7805
SO-8 Package Details
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 B AS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I NT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
NOT ES :
1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES].
5 DIMENS ION DOE S NOT INCL UDE MOLD PR OT R US IONS .
6 DIMENS ION DOE S NOT INCL UDE MOLD PR OT R US IONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A SUBSTRAT E.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INT ERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOS F ET )
P = DE S I GNAT E S L E AD - F R E E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
Dimensions are shown in milimeters (inches)
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IRF7805
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.2/2007
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
