PD - 91746E IRF7805 HEXFET(R) Chip-Set for DC-DC Converters * * * * N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Device Features RDS(on) IRF7805 30V 11m Qg 31nC VDS The IRF7805 offers maximum efficiency for mobile CPU core DC-DC converters. Qsw 11.5nC Qoss 36nC Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage Max. Units 30 V 12 VGS Gate-to-Source Voltage ID @ TA = 25C Continuous Drain Current, VGS @ 10V 13 ID @ TA = 70C Continuous Drain Current, VGS 10 IDM Pulsed Drain Current PD @TA = 25C Power Dissipation c PD @TA = 70C e Power Dissipation e TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range e @ 10V e A 100 2.5 W 1.6 0.02 -55 to + 150 W/C C Thermal Resistance Parameter RJL RJA www.irf.com g Junction-to-Ambient eg Junction-to-Drain Lead Typ. Max. Units --- 20 C/W --- 50 1 2/14/07 IRF7805 Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units RDS(on) VGS(th) h Static Drain-to-Source On-Resistanceh Gate Threshold Voltage h IDSS Drain-to-Source Leakage Current BVDSS Drain-to-Source Breakdown Voltage --- --- V VGS = 0V, ID = 250A --- 1.0 9.2 --- 11 3.0 m V VGS = 4.5V, ID = 7.0A VDS = VGS, ID = 250A --- --- --- --- 70 10 A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V IGSS Gate-to-Source Forward Leakage --- --- --- --- 150 100 Qg Gate-to-Source Reverse Leakage Total Gate Charge --- --- --- 22 -100 31 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge --- --- 3.7 1.4 --- --- --- --- 6.8 8.2 --- 11.5 Qoss Gate-to-Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge --- 3.0 RG td(on) tr Gate Resistance Turn-On Delay Time Rise Time 0.5 --- --- --- 16 20 td(off) tf Turn-Off Delay Time Fall Time --- --- 38 16 --- --- h Qgs1 Qgs2 Qgd Qsw h h Conditions 30 nA VDS = 24V, VGS = 0V, TJ = 100C VGS = 12V VGS = -12V VGS = 5.0V nC VDS = 16V ID = 7.0A 3.6 nC VDS = 16V, VGS = 0V 1.7 --- --- ns d VDD = 16V, VGS = 4.5V ID = 7.0A e RG= 2 Resistive Load Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD Qrr (Body Diode) Diode Forward Voltage Reverse Recovery Charge c h Qrr(s) Reverse Recovery Charge (with Parallel Schottky) f f --- --- A showing the integral reverse p-n junction diode. TJ = 25C, IS = 7.0A, VGS = 0V di/dt = 700A/s --- --- 106 --- --- 88 1.2 V --- ns --- nC --- --- 55 Conditions MOSFET symbol 2.5 VDS = 16V, VGS = 0V, IS = 7.0A di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A Notes: 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss R is measured at TJ of approximately 90C. Devices are 100% tested to these parameters. www.irf.com IRF7805 Typical Characteristics Fig 1. Normalized On-Resistance vs. Temperature Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage ISD , Reverse Drain Current (A) 10 TJ = 150 C 1 TJ = 25 C V GS = 0 V 0.1 0.4 0.5 0.6 0.7 0.8 0.9 VSD ,Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.1 0.001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) www.irf.com Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 3 IRF7805 SO-8 Package Details Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 6X e e1 8X b 0.25 [.010] A1 A MILLIMET ERS MAX A 5 INCHES MIN MAX 1.27 BAS IC .025 BAS IC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 8X 0.72 [.028] 3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS T HE LENGT H OF LEAD FOR S OLDERING TO A SUBS TRAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = ASS EMBLY S IT E CODE LOT CODE PART NUMBER 4 www.irf.com IRF7805 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.2/2007 www.irf.com 5