TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Low threshold (-2.4V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device TP2502 Package Options TO-243AA (SOT-89) Die* TP2502N8-G TP2502ND BVDSS/BVDGS RDS(ON) VGS(TH) ID(ON) () (max) (V) -20 2.0 -2.4 -2.0 (V) -G indicates package is RoHS compliant (`Green') * MIL visual screening available. (min) (A) Pin Configuration DRAIN Absolute Maximum Ratings GATE TO-243AA (SOT-89) (N8) Parameter Value Drain-to-source voltage BVDSS Product Marking 20V TP5LW Drain-to-gate voltage BVDGS Gate-to-source voltage Operating and storage temperature Soldering temperature* -55C to +150C 300C SOURCE DRAIN W = Code for week sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) (N8) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6 mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TP2502 Thermal Characteristics ID Power Dissipation ID jc Package (continuous) (mA) (pulsed) (A) @ TA = 25OC (W) (OC/W) TO-243AA -630 -3.3 1.6 15 (OC/W) IDR (mA) IDRM 78 -630 -3.3 ja (A) ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25C unless otherwise specified ) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage -20 - - V VGS = 0V, ID = -2.0mA VGS(th) Gate threshold voltage -1.0 - -2.4 V VGS = VDS, ID= -1.0mA Change in VGS(th) with temperature - 3.0 4.5 O mV/ C VGS = VDS, ID= -1.0mA Gate body leakage - - -100 nA VGS = 20V, VDS = 0V - -100 A VGS = 0V, VDS = Max Rating - -10 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125C -0.4 -0.7 - -2.0 -3.3 - 2.0 3.5 1.5 2.0 VGS(th) IGSS IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) RDS(ON) - - 0.75 1.2 %/ C VGS = -10V, ID = -1.0A 300 650 - mmho VDS = -15V, ID = -1.0A Input capacitance - - 125 COSS Common source output capacitance - - 70 CRSS Reverse transfer capacitance - - 25 td(ON) Turn-on delay time - - 10 Rise time - - 11 Turn-off delay time - - 15 Fall time - - 12 Diode forward voltage drop - -1.3 Reverse recovery time - 300 VSD trr VGS = -5.0V, ID = -250mA Change in RDS(ON) with temperature CISS tf VGS = -10V, VDS = -15V - Forward transconductance td(OFF) VGS = -5.0V, VDS = -15V Static drain-to-source on-state resistance GFS tr A Conditions O VGS = -10V, ID = -1.0A pF VGS = 0V, VDS = -20V, f = 1.0 MHz ns VDD = -20V, ID = -1.0A, RGEN = 25 -2.0 V VGS = 0V, ISD = -1.5A - ns VGS = 0V, ISD = -1.5A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) All A.C. parameters sample tested. 2. Switching Waveforms and Test Circuit 0V PULSE GENERATOR 10% INPUT -10V td(ON) RGEN 90% t(OFF) t(ON) td(OFF) tr D.U.T. tF 0V 90% OUTPUT VDD Output INPUT 10% 90% RL 10% VDD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 TP2502 Typical Performance Curves Output Characteristics -5 -4 -4 VGS = -10V -3 ID (amperes) ID (amperes) Saturation Characteristics -5 -9V -8V -2 -7V -6V -1 0 0 -9V -8V -2 -7V -6V -1 -5V -5V -4V -3V -4V -3V -30 -20 -10 VGS = -10V -3 0 -40 0 -2 -4 Transconductance vs. Drain Current 1.0 2.0 VDS = -15V -8 -10 Power Dissipation vs. Ambient Temperature TO-243AA 1.6 TA = -55C PD (watts) GFS (siemens) 0.8 0.6 -6 VDS (volts) VDS (volts) TA = 25C 0.4 1.2 0.8 TA = 150C 0.2 0.4 0 0 0 -0.4 -0.8 -1.2 -1.6 0 -2.0 25 50 ID (amperes) Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) -10 ID (amperes) TO-243AA(pulsed) -1.0 -0.1 -0.01 -0.1 75 100 125 150 TA (C) TO-243AA (DC) TA = 25C Thermal Response Characteristics 0.8 0.6 0.4 TO-243AA TA = 25C PD = 1.6W 0.2 0 -1.0 -10 VDS (volts) -100 0.001 0.01 0.1 1 tp (seconds) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 10 TP2502 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.1 On-Resistance vs. Drain Current 5 RDS(ON) (ohms) BVDSS (normalized) 1.0 VGS = -10V VGS = -5V 4 3 2 1 0.9 -50 0 50 100 0 150 0 -1 -2 -3 -4 -5 ID (amperes) Tj (C) V(th) and RDS Variation with Temperature Transfer Characteristics -5 2.0 1.4 VDS = -15V RDS (ON) @ -10V, -1A TA = -55C -3 -2 25C 150C 1.2 V(th) @ -1mA 1.2 1.0 0.8 0.8 -1 0.4 0.6 0 0 0 -2 -4 -6 -8 -50 -10 0 50 VGS (volts) Gate Drive Dynamic Characteristics -10 f = 1MHz -8 VGS (volts) 150 C (picofarads) 150 Tj (C) Capacitance vs. Drain-to-Source Voltage 200 100 100 CISS COSS 50 VDS = -10V 200 pF -6 -4 VDS = -40V 80 pF -2 CRSS 0 0 0 -10 -20 -30 VDS (volts) -40 0 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) 1.6 VGS(th) (normalized) ID (amperes) -4 TP2502 3-Lead TO-243AA (SOT-89) Package Outline (N8) b Symbol Dimensions (mm) b1 A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.89 - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version D070908. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. (c)2009 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TP2502 A022309 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 5