STD3N40K3 N-channel 400 V, 2.7 typ., 2 A SuperMESH3TM Zener-protected Power MOSFET in a DPAK package Datasheet -- production data Features Order code VDSS RDS(on) max ID Pw STD3N40K3 400 V < 3.4 2A 30 W TAB 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected 3 1 DPAK Figure 1. Applications Internal schematic diagram ' 7$% Switching applications Description This SuperMESH3TM Power MOSFET is the result of improvements applied to STMicroelectronics' SuperMESHTM technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. * 6 AM01476v1 Table 1. Device summary Order code Marking Package Packaging STD3N40K3 3N40K3 DPAK Tape and reel July 2012 This is information on a product in full production. Doc ID 023398 Rev 1 1/16 www.st.com 16 Contents STD3N40K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 Doc ID 023398 Rev 1 STD3N40K3 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage 400 V VGS Gate- source voltage 30 V ID Drain current (continuous) at TC = 25 C 2 A ID Drain current (continuous) at TC = 100 C 1.2 A Drain current (pulsed) 8.0 A Total dissipation at TC = 25 C 30 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 1 A EAS Single pulse avalanche energy (starting Tj = 25C, ID = IAR, VDD = 50 V) 45 mJ IDM (1) PTOT VESD(G-S) Gate source ESD(HBM-C = 100 pF, R = 1.5 k) 2500 V dv/dt (2) Peak diode recovery voltage slope 12 V/ns Tstg Tj Storage temperature C - 55 to 150 Max. operating junction temperature C 1. Pulse width limited by safe operating area. 2. ISD < 2 A, di/dt = 400 A/s, VDD = 80% V(BR)DSS, VDS peak V(BR)DSS. Table 3. Symbol Thermal data Parameter Value Unit Rthj-case Thermal resistance junction-case max 4.17 C/W Rthj-pcb Thermal resistance junction-pcb max 50 C/W Doc ID 023398 Rev 1 3/16 Electrical characteristics 2 STD3N40K3 Electrical characteristics (TC = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. 400 V IDSS Zero gate voltage VDS = 400 V drain current (VGS = 0) VDS = 400 V, TC=125 C 1 50 A A IGSS Gate-body leakage current (VDS = 0) 10 A 3.75 4.5 V 2.7 3.4 Typ. Max. Unit - pF pF pF VGS = 20 V, VDS=0 VGS(th) Gate threshold voltage VGS = VDS, ID = 50 A RDS(on) Static drain-source onVGS = 10 V, ID = 0.9 A resistance Table 5. Symbol Ciss Coss Crss Coss(tr)(2) 3 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 Equivalent output Coss(er)(1) capacitance energy related Min. - 165 17 3 - 9 - pF - 14 - pF - 10 - - 11 2 7 - nC nC nC VDS=0 to 320 V, VGS=0 Equivalent output capacitance time related Rg Instrinsic gate resistance f=1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 320 V, ID = 1.8 A, VGS = 10 V (see Figure 16) 1. Is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS increases from 0 to 80% VDSS 4/16 Unit Doc ID 023398 Rev 1 STD3N40K3 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol Switching times Parameter Turn on delay time Rise time Turn off delay time Fall time Parameter ISDM (1) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM VDD = 200 V, ID = 0.6, RG = 4.7 , VGS = 10 V (see Figure 15) Min. Typ. Max. Unit - 7 8 18 14 - ns ns ns ns Min. Typ. Max. Unit - 1.8 7.2 A A - 1.5 V Source drain diode Source-drain current Source-drain current (pulsed) ISD Test conditions Test conditions ISD = 1.8 A, VGS = 0 Reverse recovery time ISD = 1.8 A, di/dt = 100 A/s Reverse recovery charge VDD = 60 V Reverse recovery current (see Figure 17) - 145 490 7 ns nC A Reverse recovery time ISD = 1.8 A, di/dt = 100 A/s Reverse recovery charge VDD = 60 V, Tj = 150 C Reverse recovery current (see Figure 17) - 166 580 7 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs= 1 mA (open drain) Min. 30 Typ. Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 023398 Rev 1 5/16 Electrical characteristics STD3N40K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM12470v1 ID (A) 1 is 10s D S( on ) O Li per m at ite io d ni by n m this ax a R rea 100s 0.1 1ms 10ms 0.01 Tj=150C Tc=25C Single pulse 0.001 Figure 4. 10 1 0.1 100 VDS(V) Output characteristics AM09050v1 ID (A) VGS=10V 3.5 AM12473v1 ID (A) VDS=15V 3 7V 3.0 2.5 2.5 2 2.0 1.5 6V 1.5 1 1.0 0.5 0.5 5V 0 0 Figure 6. 5 10 15 20 25 VDS(V) 0 0 Gate charge vs gate-source voltage Figure 7. AM08996v1 VGS (V) VGS VDD=320V ID=1.8A 12 VDS 350 300 10 250 8 RDS(on) () 2 4 6 8 VGS(V) Static drain-source on-resistance AM08997v1 VGS=10V 3.8 3.6 3.4 200 6 3.2 150 4 100 2 50 0 0 6/16 2 4 6 8 0 10 Qg(nC) 3.0 2.8 2.6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID(A) Doc ID 023398 Rev 1 STD3N40K3 Figure 8. Electrical characteristics Capacitance variations Figure 9. AM08998v1 C (pF) Output capacitance stored energy AM12477v1 Eoss (J) 0.8 Ciss 100 0.7 0.6 0.5 0.4 10 Coss 0.3 0.2 Crss 1 0.1 1 100 10 AM12478v1 VGS(th) 100 200 300 400 VDS(V) Figure 11. Normalized on-resistance vs. temperature AM12479v1 RDS(on) (norm) ID=50A 1.10 0 0 VDS(V) Figure 10. Normalized gate threshold voltage vs. temperature (norm) 0.1 VGS=10V ID=0.9A 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 -25 25 75 Figure 12. Source-drain diode forward characteristics -25 25 75 125 TJ(C) Figure 13. Normalized BVDSS vs. temperature AM12480v1 VSD (V) 0 -75 TJ(C) 125 AM12481v1 BVDSS (norm) TJ=-50C ID=1mA 1.0 1.10 0.9 1.05 0.8 TJ=25C 0.7 1.00 TJ=150C 0.6 0.95 0.5 0.4 0 0.4 0.8 1.2 1.6 ISD(A) 0.90 -75 Doc ID 023398 Rev 1 -25 25 75 125 TJ(C) 7/16 Electrical characteristics STD3N40K3 Figure 14. Maximum avalanche energy vs. starting Tj AM12482v1 EAS (mJ) 50 ID= 1 A VDD= 50 V 45 40 35 30 25 20 15 10 5 0 0 8/16 20 40 60 80 100 120 140 TJ(C) Doc ID 023398 Rev 1 STD3N40K3 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform AM01471v1 Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 023398 Rev 1 10% AM01473v1 9/16 Package mechanical data 4 STD3N40K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 10/16 Doc ID 023398 Rev 1 STD3N40K3 Package mechanical data Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 R V2 1 0.20 0 8 Doc ID 023398 Rev 1 11/16 Package mechanical data STD3N40K3 Figure 21. DPAK (TO-252) drawing 0068772_I Figure 22. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 a. All dimension are in millimeters 12/16 Doc ID 023398 Rev 1 AM08850v1 STD3N40K3 5 Packaging mechanical data Packaging mechanical data Table 10. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 023398 Rev 1 18.4 22.4 13/16 Packaging mechanical data STD3N40K3 Figure 23. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 24. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 14/16 Doc ID 023398 Rev 1 STD3N40K3 6 Revision history Revision history Table 11. Document revision history Date Revision 24-Jul-2012 1 Changes First release. Doc ID 023398 Rev 1 15/16 STD3N40K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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