This is information on a product in full production.
July 2012 Doc ID 023398 Rev 1 1/16
16
STD3N40K3
N-channel 400 V, 2.7 Ω typ., 2 A SuperMESH3™
Zener-protected Power MOSFET in a DPAK package
Datasheet — production data
Features
■100% avalanche tested
■Extremely high dv/dt capability
■Gate charge minimized
■Very low intrinsic capacitance
■Improved diode reverse recovery
characteristics
■Zener-protected
Applications
■Switching applications
Description
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
Figure 1. Internal schematic diagram
Order code VDSS RDS(on) max IDPw
STD3N40K3 400 V < 3.4 Ω 2 A 30 W
DPAK
1
3
TAB
'7$%
*
6
AM01476v1
Table 1. Device summary
Order code Marking Package Packaging
STD3N40K3 3N40K3 DPAK Tape and reel
www.st.com
Contents STD3N40K3
2/16 Doc ID 023398 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STD3N40K3 Electrical ratings
Doc ID 023398 Rev 1 3/16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 400 V
VGS Gate- source voltage ± 30 V
IDDrain current (continuous) at TC = 25 °C 2 A
IDDrain current (continuous) at TC = 100 °C 1.2 A
IDM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 8.0 A
PTOT Total dissipation at TC = 25 °C 30 W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max) 1A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V) 45 mJ
VESD(G-S)
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ) 2500 V
dv/dt (2)
2. ISD < 2 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.
Peak diode recovery voltage slope 12 V/ns
Tstg Storage temperature - 55 to 150 °C
TjMax. operating junction temperature °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 4.17 °C/W
Rthj-pcb Thermal resistance junction-pcb max 50 °C/W
Electrical characteristics STD3N40K3
4/16 Doc ID 023398 Rev 1
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 1 mA, VGS = 0 400 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 400 V
VDS = 400 V, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20 V, VDS=0 ±10 µA
VGS(th) Gate threshold voltage VGS = VDS, ID = 50 µA 3 3.75 4.5 V
RDS(on)
Static drain-source on-
resistance VGS = 10 V, ID = 0.9 A 2.7 3.4 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0 -
165
17
3-
pF
pF
pF
Coss(er)(1)
1. Is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance energy
related VDS=0 to 320 V, VGS=0
-9-pF
Coss(tr)(2)
2. Is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance time
related
-14-pF
Rg
Instrinsic gate
resistance f=1 MHz open drain - 10 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 320 V, ID = 1.8 A,
VGS = 10 V
(see Figure 16)
-
11
2
7
-
nC
nC
nC
STD3N40K3 Electrical characteristics
Doc ID 023398 Rev 1 5/16
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn on delay time
Rise time
Turn off delay time
Fall time
VDD = 200 V, ID = 0.6,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
-
7
8
18
14
-
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
-1.8
7.2
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 1.8 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1.8 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 17)
-
145
490
7
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1.8 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 17)
-
166
580
7
ns
nC
A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BVGSO
Gate-source breakdown
voltage Igs=± 1 mA (open drain) 30 - V
Electrical characteristics STD3N40K3
6/16 Doc ID 023398 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
I
D
1
0.1
0.01
0.001
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
AM12470v1
I
D
1.5
1.0
0.5
0010 V
DS
(V)
20
(A)
515 25
2.0
2.5
5V
6V
7V
V
GS
=10V
3.0
3.5
AM09050v1
I
D
1.5
1
0.5
004V
GS
(V)
8
(A)
26
2
2.5
3
V
DS
=15V
AM12473v1
V
GS
6
4
2
002Q
g
(nC)
(V)
8
8
46
10
V
DD
=320V
I
D
=1.8A
10
12
300
200
100
0
350
V
DS
V
GS
150
250
50
AM08996v1
R
DS(on)
3.2
3.0
2.8
2.6
0.2 0.6 I
D
(A)
(Ω)
0.4 0.8
3.4
3.6
3.8
V
GS
=10V
1.0 1.2 1.4 1.6 1.8
AM08997v1
STD3N40K3 Electrical characteristics
Doc ID 023398 Rev 1 7/16
Figure 8. Capacitance variations Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized on-resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BVDSS vs. temperature
C
100
10
1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
AM08998v1
E
oss
0.3
0.2
0.1
0
0100 V
DS
(V)
(µJ)
400
0.4
200 300
0.5
0.6
0.7
0.8
AM12477v1
V
GS(th)
1.00
0.90
0.80
0.70
-75 T
J
(°C)
(norm)
-25
1.10
75
25 125
I
D
=50µA
AM12478v1
R
DS(on)
2.0
1.5
1.0
0.5
-75 T
J
(°C)
(norm)
-25 75
25 125
2.5
0
V
GS
=10V
I
D
=0.9A
AM12479v1
V
SD
00.8I
SD
(A)
(V)
0.4 1.2 1.6
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
J
=-50°C
T
J
=150°C
T
J
=25°C
AM12480v1
BV
DSS
-75 T
J
(°C)
(norm)
-25 75
25 125
0.90
0.95
1.00
1.05
1.10
I
D
=1mA
AM12481v1
Electrical characteristics STD3N40K3
8/16 Doc ID 023398 Rev 1
Figure 14. Maximum avalanche energy vs.
starting Tj
E
AS
040 T
J
(°C)
(mJ)
20 100
60 80
0
5
10
15
20
120 140
25
30
35
40
45
50
I
D
= 1 A
V
DD
= 50 V
AM12482v1
STD3N40K3 Test circuits
Doc ID 023398 Rev 1 9/16
3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped Inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.31000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STD3N40K3
10/16 Doc ID 023398 Rev 1
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
STD3N40K3 Package mechanical data
Doc ID 023398 Rev 1 11/16
Table 9. DPAK (TO-252) mechanical data
Dim.
mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9.35 10.10
L1 1.50
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0° 8°
Package mechanical data STD3N40K3
12/16 Doc ID 023398 Rev 1
Figure 21. DPAK (TO-252) drawing
Figure 22. DPAK footprint(a)
a. All dimension are in millimeters
0068772_I
6.7
1.6
1.6
2.3
2.3
6.7 1.83
AM08850v1
STD3N40K3 Packaging mechanical data
Doc ID 023398 Rev 1 13/16
5 Packaging mechanical data
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
W 15.7 16.3
Packaging mechanical data STD3N40K3
14/16 Doc ID 023398 Rev 1
Figure 23. Tape for DPAK (TO-252)
Figure 24. Reel for DPAK (TO-252)
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
STD3N40K3 Revision history
Doc ID 023398 Rev 1 15/16
6 Revision history
Table 11. Document revision history
Date Revision Changes
24-Jul-2012 1 First release.
STD3N40K3
16/16 Doc ID 023398 Rev 1
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