SAMSUNG SEMICONDUCTOR INC 735. pp 4E O B eseuaye 9007073 2 i KSR1206 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) * Switching Circuit, Inverter, Interface circuit : TO-92S Driver circuit Bullt in bias Resistor (R,=10K2, R,=47KQ) Complement to KSR2206 ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbol Rating Unit Collector-Base Voltage Veso 50 Vv Collector-Emitter Voltage Vero 50 Vv Emitter-Base Voltage Veo 10 v Collector Current Ic 100 mA Collector Dissipation Pe 300 mW Junction Temperature Tj - 150 C Storage Temperature Tstg -5 ~150 c 1. Emilter 2. Collector 3. Rase ELECTRICAL CHARACTERISTICS (T, =25C) Characteristic | Symbol Test Condition Min Typ Max Unit Collector-Base Breakdown Voltage BYceo lc=10pA, Ie=O0 50 Vv . Collector-Emitter Breakdown Voltage | BVceo b=100pA, lp=O0 _ 60 Vv Collector Cutoff Current lepo Veg=40V, le=0 0.1 pA DC Current Gain hee Voe=5V, Ic=5MA 68 Collector-Emitter Saturation Voltage | Vce(sat) | lb=10mA, la=0.5mA 0.3 Vv Output Capacitance Cob Vcp=10V, le=O0 . | 3.7 pF f=1MHz . Current Gain-Bandwidth Product fr Vce=10V, lb=5mA 250 MHz Input Off Voltage Vi(off) Vce= SV, Ic 100nA 0.3 Vv Input On Voltage . Viton) Vce=O.3V, lo=1mA 1.4 Vv Input Resistor Ri 7 10 13 Ka Resistor Ratio R,/Re 0.19 0.21 0.24 Equivalent Circuit . Collector {Outpt} A Base (Input}}___aap~yp_ AS 2 Emitter (Gnd} oH SAMSUNG SEMICONDUCTOR 343 SAMSUNG SEMICONOUCTOR INC T3g4pL4e O ff 7aeuz42 oooz024 9 ff KSR1206 INPUT ON VOLTAGE Vi, (on) (Vv), INPUT VOLTAGE On 0305 1 35 {{ma}, COLLECTOR CURRENT INPUT OFF VOLTAGE ko(uA}, COLLECTOR CURRENT 1 01 03 O05 OF O09 1.1 19 16 17 19 24 VAOFFKY), INPUT OFF VOLTAGE 30 50 400 < NPN EPITAXIAL SILICON TRANSISTOR _ OC CURRENT GAIN 3 50 z 3 5 z 3 8 i 1 0.1 03 0.5 1 365 to 30 50 100 i{mA), COLLECTOR CURRENT POWER DERATING Po(mW)}, POWER DISSIPATION 0 25 so 75 100 125 150 175 TA*C), AMBIENT TEMPERATURE eb SAMSUNG SEMICONDUCTOR 344