Features
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
IR HiRel R7 Logic Level Power MOSFETs provide simple
solution to interfacing CMOS and TTL control circuits to
power devices in space and other radiation environments.
The threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
The device is ideal when used to interface directly with
most logic gates, linear IC’s, micro-controllers, and other
device types that operate from a 3.3-5V source. It may
also be used to increase the output current of a PWM,
voltage comparator or an operational amplifier where the
logic level drive signal is available.
Absolute Maximum Ratings Pre-Irradiation
Symbol Parameter Value Units
ID1 @ VGS = 4.5V, TC = 25°C Continuous Drain Current 6.5
A
ID2 @ VGS = 4.5V, TC = 100°C Continuous Drain Current 4.1
IDM @ TC = 25°C Pulsed Drain Current 26
PD @TC = 25°C Maximum Power Dissipation 23.2 W
Linear Derating Factor 0.18 W/°C
VGS Gate-to-Source Voltage ± 10 V
EAS Single Pulse Avalanche Energy 21 mJ
IAR Avalanche Current 6.5 A
EAR Repetitive Avalanche Energy 2.32 mJ
dv/dt Peak Diode Recovery dv/dt 4.3 V/ns
TJ Operating Junction and
°C
-55 to + 150
TSTG Storage Temperature Range
Package Mounting Surface Temp. 300 (for 5s)
Weight 0.25 (Typical) g
IRHLNM77110
2N7609U8
1 2018-11-14
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLNM77110 100 kRads(Si) 0.29 6.5A
IRHLNM73110 300 kRads(Si) 0.29 6.5A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.2)
PD-97326D
Description
For Footnotes, refer to the page 2.
International Rectifier HiRel Products, Inc.
R
7
100V, N-CHANNEL
TECHNOLOGY
SMD-0.2
(METAL LID)
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International Rectifier HiRel Products, Inc.
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 5.4 °C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.105 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.29 VGS = 4.5V, ID2 = 4.1A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
VGS(th)/TJ Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
Gfs Forward Transconductance 3.5 ––– ––– S VDS = 15V, ID2 = 4.1A
IDSS Zero Gate Voltage Drain Current ––– ––– 1.0 µA VDS = 80V, VGS = 0V
––– ––– 10 VDS = 80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– 100 nA VGS = 10V
Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -10V
QG Total Gate Charge ––– ––– 11
nC
ID1 = 6.5A
QGS Gate-to-Source Charge ––– ––– 4.0 VDS = 50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 6.0 VGS = 4.5V
td(on) Turn-On Delay Time ––– ––– 18
ns
VDD = 50V
tr Rise Time ––– ––– 75 ID1 = 6.5A
td(off) Turn-Off Delay Time ––– ––– 50 RG = 7.5
tf Fall Time ––– ––– 12 VGS = 5.0V
Ls +LD Total Inductance ––– 6.8 ––– nH Measured from the center of
drain pad to center of source pad
Ciss Input Capacitance ––– 572 –––
pF
VGS = 0V
Coss Output Capacitance ––– 124 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 1.6 ––– ƒ = 1.0MHz
RG Gate Resistance ––– 10.5 ––– ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– 6.5
A
ISM Pulsed Source Current (Body Diode) ––– ––– 26
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 6.5A, VGS = 0V
trr Reverse Recovery Time ––– ––– 215 ns TJ = 25°C, IF = 6.5A, VDD ≤ 25V
Qrr Reverse Recovery Charge ––– ––– 1.05 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L =0.98mH, Peak IL = 6.5A, VGS = 10V
ISD 6.5A, di/dt 490A/µs, VDD 100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
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Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation 
Parameter Up to 300 kRads (Si) 1 Units Test Conditions Symbol Min. Max.
BVDSS Drain-to-Source Breakdown Voltage 100 ––– V VGS = 0V, ID = 250µA
VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA
IGSS Gate-to-Source Leakage Forward ––– 100 nA VGS = 10V
IGSS Gate-to-Source Leakage Reverse ––– -100 nA VGS = -10V
IDSS Zero Gate Voltage Drain Current ––– 1.0 µA VDS = 80V, VGS = 0V
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3) ––– 0.26 VGS = 4.5V, ID2 = 4.1A
RDS(on) Static Drain-to-Source
On-State Resistance (SMD-0.2) ––– 0.29 VGS = 4.5V, ID2 = 4.1A
VSD Diode Forward Voltage ––– 1.2 V VGS = 0V, IS = 6.5A
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
1. Part Numbers IRHLNM77110, IRHLNM73110. Additional part numbers IRHLNMC77110, IRHLNMC73110
are listed on page 9.
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For Footnotes, refer to the page 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm2))
Energy
(MeV)
Range
(µm)
VDS (V)
@ VGS =
0V
@ VGS =
-2V
@ VGS =
-4V
@ VGS =
-5V
@ VGS =
-6V
@ VGS =
-7V
38 ± 5% 300 ± 7.5% 38 ± 7.5% 100 100 100 100 100 100
62 ± 5% 355 ± 7.5% 33 ± 7.5% 100 100 100 100 100 –––
85 ± 5% 380 ± 10% 29 ± 7.5% 100 100 100 100 ––– –––
Fig a. Typical Single Event Effect, Safe Operating Area
0
20
40
60
80
100
120
-7-6-5-4-3-2-10
VGS
VDS
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Radiation Characteristics
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Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
60s PULSE WIDTH, Tj = 25°C
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
BOTTOM 2.25V
2.25V
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
60s PULSE WIDTH
Tj = 150°C
2.25V
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
BOTTOM 2.25V
0 1 2 3 4 5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
VDS = 50V
6s PULSE WIDTH
TJ = 150°C
TJ = 25°C
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VGS = 4.5V
ID = 6.5A
0 2 4 6 8 10 12 14 16 18 20
ID, Drain Current (A)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RDS(on), Drain-to -Source On Resistance ()
Vgs = 4.5V
TJ = 25°C
TJ = 150°C
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Fig 12. Maximum Drain Current Vs.Case Temperature
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 11. Typical Source-Drain Diode Forward Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
100
110
120
130
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
ID = 1.0mA
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS(th) Gate threshold Voltage (V)
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
110 100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
1200
C, Capacitance (pF)
VGS = 0V, f = 1 MHz
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 2 4 6 8 10 12 14 16 18 20
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS = 80V
VDS = 50V
VDS = 20V
ID = 6.5A
FOR TEST CIRCUIT
SEE FIGURE 17
Fig 8. Typical Threshold Voltage Vs
Temperature
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD , Source-to-Drain Voltage (V)
0.1
1.0
10
100
ISD, Reverse Drain Current (A)
VGS = 0V
TJ = 150°C
TJ = 25°C
25 50 75 100 125 150
TC , Case Temperature (°C)
0
1
2
3
4
5
6
7
ID, Drain Current (A)
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Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy
Vs. Drain Current
110 100 1000
VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
DC
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
5
10
15
20
25
30
EAS , Single Pulse Avalanche Energy (mJ)
I
D
TOP 2.9A
4.1A
BOTTOM 6.5A
1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0. 01
0. 1
1
0. 00001 0. 0001 0. 001 0. 01 0. 1
Not es:
1. Dut y f act or D =t / t
2. Peak T = P x Z + T
1 2
JDM t hJC C
P
t
t
DM
1
2
t , Re c ta ngul ar Puls e Durati on (s ec )
Thermal Response
(Z )
1
thJC
0. 01
0. 02
0. 05
0. 10
0. 20
D = 0. 50
SI NG LE PULSE
( THERM AL RESPONSE)
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International Rectifier HiRel Products, Inc.
Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Wave-
Fig 17b. Gate Charge Test Circuit
Fig 17a. Gate Charge Waveform
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
tp
V(BR)DSS
IAS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Vgs
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Case Outline and Dimensions - SMD-0.2 ( Metal Lid)
Case Outline and Dimensions - SMD-0.2 ( Ceramic Lid)
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www.infineon.com/irhirel
Additional Product Summary (continued from pages 1 and 3)
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLNMC77110 100 kRads(Si) 0.29 6.5A
IRHLNMC73110 300 kRads(Si) 0.29 6.5A
SMD-0.2
(CERAMIC LID)
10 2018-11-14
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International Rectifier HiRel Products, Inc.
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.