rn OB EW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL 14 AMPERE 100 VOLTS @ = REPETITIVE AVALANCHE RATINGS 0.169 @ LOW Roson) " TO-59 e LOW DRIVE REQUIREMENT DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (T,. = 25C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL NES130/59 UNITS Drain-Source Voltage Vos 100 Vv Gate-Source Voltage Ves +20 Vv Continuous Drain Current To = 25C Ip 14 A Power Dissipation To = 25C Pp 35 WwW Operating Junction & Storage Temperature Range Ts Tote -55 to +150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYP. MAX. UNITS Junction-to-Case Runic 3.5 K/W MECHANICAL OUTLINE PIN OUT: PIN 1: ANODE PIN 3: CATHODE bose 0.078" 0.380 99-065" 0.319 rey | =o 7 0.455" 0.400 _ ALL DIMENSIONS IN INCHES NEW ENGLAND SEMICONDUCTOR =f sso azn-a4e Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-916 REV: -- NES130/59 u B FNEW ENGLAND SEMICONDUCTOR NES130/59 ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL MIN. TYP. MAX. | UNITS Drain-Source Breakdown Voltage Ves = OV, Ip = 250HA Vprypss 100 Vv Gate Threshold Voltage Vos = Vos Ip = 250 pA Vosin) 2.0 4.0 Vv Gate-Body Leakage Vos = At Rated Ves lass +100 nA Zero Gate Voltage Drain Current Vps = 0.8 max Rating Vgs = 0V Ipss 250 HA Zero Gate Voltage Drain Current Vps = 80% max Veaarnipss Vos = 0V, Ty = 125C Ips 1000 HA Drain-Source On-State Resistance (1) Vos = 10V, Ip = 60% Rated Ip sion) 0.16 Q Forward Transconductance (1) Vos = 15 V, Ip = 60% A Vpg 2 Ipvony X Rosny Max e 4.6 S(Q) Input Capacitance Vos = OV Ciss 650 Output Capacitance Vos = 25V Coss 240 pF Reverse Transfer Capacitance = | MHz Crs 44 Total Gate Charge Vps = 80 %Veerypss Q, 26 Vos = 10V, Gate-Source Charge (Gate charge is essentially Qus 5.5 nc independent of operating Gate -Drain Charge temperature.) Qua 1 z Turn-On Delay Time Vag = 50% V, Ip = 50%A, d(on) 14 Rise Time Rg = 12 Q t ns r 63 Turn-Off Delay Time (Switching time is a(off) 33 essentially independent of Fall Time operating temperature.) 'f 38 SOURCE-DRAIN DIODE RATINGS & CHARACTERISTICS (T; = 25C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL | MIN. TYP. MAX } UNITS Forward Voltage (1) Ir = Is, Ves = OV Vop 2.5 Vv Reverse Recovery Time Ip = Ig, dI/dt= 100 A/pS tr 250 ns Reverse Recovered Charge Ip = Is, dI/dt = 100 A/uS Qn 13 uc (1)Pulse Test: Pulse width < 300 psec. Duty cycel < 2%. 6 Lake Street Lawrence,MA 01841 NEW ENGLAND SEMICONDUCTOR 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-916 REV: --