MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1414-7-252
TECHNICAL DATA
FEATURES
n
HIGH POWER
n
BROAD BAND INTERNALLY MATCHED FET
P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
n
HERMETICALLY SEALED PACKAGE
n
HIGH GAIN
G1dB=6.0 dB at 13.75 GHz to 14.5 GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P
1dB
dBm 37.0 38.0
Power Gain at 1dB Gain
Compression Point G
1dB
dB 5.0 6.0
Drain Current I
DS1
A
2.25 2.75
Power Added Efficiency
η
add
VDS= 9V
f= 13.75 to 14.5GHz
%
23
Channel Temperature Rise
∆
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°
C
80
Recommended gate resistance(Rg) : Rg= 150
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance
gm
V
DS
=
3V
I
DS
= 2.4 A
mS
1500
Pinch-off Voltage V
GSoff
V
DS
=
3V
I
DS
= 72mA
V -1.5 -3.0 -4.5
Saturated Drain Current I
DSS
V
DS
=
3V
V
GS
= 0V
A
5.0
Gate-Source Breakdown
Voltage V
GSO
I
GS
= -72
µ
A
V -5
Thermal Resistance R
th(c-c)
Channel to Case
°
C/W
3.0 3.7
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006
2
TIM1414-7-252
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage V
DS
V 15
Gate-Source Voltage V
GS
V -5
Drain Current I
DS
A 5.7
Total Power Dissipation (Tc= 25
°
C) P
T
W 40.5
Channel Temperature T
ch
°
C 175
Storage Temperature T
stg
°
C -65 to +175
PACKAGE OUTLINE (2-9D1B)
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
4-R2.4
0.5
±
0.15
13.0
±
0.3
(2)
17.0 MAX
.
9.7
±
0.3
2.5
±
0.3
2.0MIN 2.0MIN.
(1)
(2)
0.2MAX
1.2
±
0.3
1.8
±
0.3
8.5 MAX.
0.1
3.2MAX
-
0.05
+0.1
(3)
(1) Gate
(2) Source
(3) Drain
3
TIM1414-7-252
Output Power (Pout) vs. Frequency
V
DS
=9V
I
DS
≅
2.25A
Pin=32.0 dBm
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=14.5GHz
V
DS
=9V
I
DS
≅
2.25A
Pout
η
add
Pin(dBm)
RF PERFORMANCE
13.75 14.1 14.5
40
39
38
37
36
Pout(dBm)
41
40
39
38
37
36
35
34
33
32
40
30
20
10
0
Pout(dBm)
η
add(%)
25 27 29 31 33 35
4
TIM1414-7-252
Power Dissipation(PT) vs. Case Temperature(Tc)
Tc(
°
C )
0 40 80 120 160 200
PT(W)
40
30
20
10
0
