PD - 94278A IRF7420 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS RDS(on) max ID -12V 14m@VGS = -4.5V 17.5m@VGS = -2.5V 26m@VGS = -1.8V -11.5A -9.8A -8.1A Description These P-Channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. A D S 1 8 S 2 7 D S 3 6 D G 4 5 D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 -11.5 -9.2 -46 2.5 1.6 20 8 -55 to +150 V A W mW/C V C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Max. Units 50 C/W 1 8/2/06 IRF7420 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 --- --- -0.4 32 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.007 --- --- --- --- --- --- --- --- --- 38 8.1 8.7 8.8 8.8 291 225 3529 1013 656 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 14 VGS = -4.5V, ID = -11.5A 17.5 m VGS = -2.5V, ID = -9.8A 26 VGS = -1.8V, ID = -8.1A -0.9 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -11.5A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 V GS = -8V nA 100 VGS = 8V --- ID = -11.5A --- nC VDS = -6V --- VGS = -4.5V 13 V DD = -6V, VGS = -4.5V ns 13 ID = -1.0A 437 RD = 6 338 RG = 6 --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -2.5 -46 --- --- --- --- 62 61 -1.2 93 92 A V ns C Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board, t 10sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7420 100 VGS TOP -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V 10 1 0.1 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 -1.0V 10 1 -1.0V 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.1 0.01 0.1 1 10 100 0.1 -VDS, Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 150 C TJ = 25 C V DS = -10V 20s PULSE WIDTH 0.1 0.5 1.0 1.5 2.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 100 1 10 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 1 2.5 2.0 ID = -11.5A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7420 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 5000 C, Capacitance(pF) 4500 4000 Ciss 3500 Coss = Cds + Cgd 3000 2500 2000 Coss 1500 Crss 1000 500 6 -VGS , Gate-to-Source Voltage (V) 5500 4 3 2 1 0 10 100 0 10 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 30 40 50 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 20 QG , Total Gate Charge (nC) -VDS, Drain-to-Source Voltage (V) 100 10 TJ = 150 C TJ = 25 C 1 0.1 0.2 4 V DS=-9.6V V DS=-6V 5 0 1 ID = -11.5A V GS = 0 V 0.4 0.6 0.8 1.0 1.2 100us 1ms 10 10ms TC = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 100 www.irf.com IRF7420 12 VDS -ID , Drain Current (A) VGS 9 RD D.U.T. RG - + VDD VGS 6 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 TC , Case Temperature( C) 150 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response(Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.025 ( ) RDS ( on ) , Drain-to-Source On Resistance ( RDS(on), Drain-to -Source On Resistance) IRF7420 0.020 0.015 I D = -11.5A 0.010 0.005 0.0 2.0 4.0 6.0 8.0 0.08 0.06 VGS = -1.8V 0.04 VGS = -2.5V 0.02 VGS = -4.5V 0 0.0 10.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 20.0 30.0 40.0 50.0 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com 1.0 400 0.9 350 0.8 300 0.7 Power (W) -VGS(th) ( V ) IRF7420 ID = -250A 0.6 250 200 0.5 150 0.4 100 0.3 50 0 0.2 -75 -50 -25 0 25 50 75 100 TJ , Temperature ( C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF7420 SO-8 Package Details D DIM B 8 6 7 6 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC e1 A 5 H E 1 6X 2 3 0.25 [.010] 4 A e e1 A1 8X b 0.25 [.010] A MILLIMET ERS MAX 5 A INCHES MIN MAX 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 8X 0.72 [.028] 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS THE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER 8 www.irf.com IRF7420 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/06 www.irf.com 9