DATA SH EET
Product specification
Supersedes data of 2002 Jan 23 2004 Aug 10
DISCRETE SEMICONDUCTORS
1N4148; 1N4448
High-speed diodes
M3D176
2004 Aug 10 2
Philips Semiconductors Product specification
High-speed diodes 1N4148; 1N4448
FEATURES
•Hermetically sealed leaded glass SOD27 (DO-35)
package
•High switching speed: max. 4 ns
•General application
•Continuous reverse voltage: max. 100 V
•Repetitive peak reverse voltage: max. 100 V
•Repetitive peak forward current: max. 450 mA.
APPLICATIONS
•High-speed switching.
DESCRIPTION
The1N4148and1N4448arehigh-speedswitchingdiodes
fabricated in planar technology, and encapsulated in
hermetically sealed leaded glass SOD27 (DO-35)
packages.
MARKING
TYPE NUMBER MARKING CODE
1N4148 1N4148PH or 4148PH
1N4448 1N4448
Fig.1 Simplified outline (SOD27; DO-35) and
symbol.
The diodes are type branded.
handbook, halfpage
MAM246
ka
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
1N4148 −hermetically sealed glass package; axial leaded; 2 leads SOD27
1N4448
2004 Aug 10 3
Philips Semiconductors Product specification
High-speed diodes 1N4148; 1N4448
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −100 V
VRcontinuous reverse voltage −100 V
IFcontinuous forward current see Fig.2; note 1 −200 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−4A
t=1ms −1A
t=1s −0.5 A
Ptot total power dissipation Tamb =25°C; note 1 −500 mW
Tstg storage temperature −65 +200 °C
Tjjunction temperature −200 °C
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
1N4148 IF=10mA −1V
1N4448 IF= 5 mA 0.62 0.72 V
IF= 100 mA −1V
IRreverse current VR= 20 V; see Fig.5 25 nA
VR= 20 V; Tj= 150 °C; see Fig.5 −50 µA
IRreverse current; 1N4448 VR= 20 V; Tj= 100 °C; see Fig.5 −3µA
Cddiode capacitance f = 1 MHz; VR= 0 V; see Fig.6 −4pF
trr reverse recovery time when switched from IF=10mAto
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
−4ns
Vfr forward recovery voltage when switched from IF= 50 mA;
tr=20 ns; see Fig.8 −2.5 V
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board without metallization pad.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-tp) thermal resistance from junction to tie-point lead length 10 mm 240 K/W
Rth(j-a) thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W
2004 Aug 10 4
Philips Semiconductors Product specification
High-speed diodes 1N4148; 1N4448
GRAPHICAL DATA
0 100 200
300
200
0
100
mbg451
Tamb (°C)
IF
(mA)
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG464
VF (V)
IF
(mA)
(1) (2) (3)
(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
2004 Aug 10 5
Philips Semiconductors Product specification
High-speed diodes 1N4148; 1N4448
0 100 Tj (°C) 200
103
102
10−1
10−2
10 (1)
1
IR
(µA)
mgd290
(2)
Fig.5 Reverse current as a function of junction
temperature.
(1) VR= 75 V; typical values.
(2) VR= 20 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
01020
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
2004 Aug 10 6
Philips Semiconductors Product specification
High-speed diodes 1N4148; 1N4448
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR= 1 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
2004 Aug 10 7
Philips Semiconductors Product specification
High-speed diodes 1N4148; 1N4448
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
Note
1. The marking band indicates the cathode.
SOD27 DO-35A24 SC-40 97-06-09
Hermetically sealed glass package; axial leaded; 2 leads SOD27
UNIT b
max.
mm 0.56
D
max. G1
max.
25.44.251.85
L
min.
DIMENSIONS (mm are the original dimensions)
G1
LD L
b
(1)
0 1 2 mm
scale
2004 Aug 10 8
Philips Semiconductors Product specification
High-speed diodes 1N4148; 1N4448
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands R76/05/pp9 Date of release: 2004 Aug 10 Document order number: 9397 750 13541
