3SK226 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK226 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications Unit: mm * Superior cross modulation performance. * Low reverse transfer capacitance: Crss = 0.015 pF (typ.) * Low noise figure: NF = 1.1dB (typ.) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDS 13.5 V Gate 1-source voltage VG1S 8 V Gate 2-source voltage VG2S 8 V Drain current ID 30 mA Drain power dissipation PD 150 mW Channel temperature Tch 125 C Storage temperature range Tstg -55~125 C JEDEC JEITA TOSHIBA Weight: 0.013 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics 2-3J1A Symbol Test Condition Min Typ. Max Unit Gate 1 leakage current IG1SS VDS = 0, VG1S = 6 V, VG2S = 0 50 nA Gate 2 leakage current IG2SS VDS = 0, VG1S = 0, VG2S = 6 V 50 nA 13.5 V VDS = 6 V, VG1S = 0, VG2S = 4.5 V 0 0.1 mA 0 1.0 V Drain-source voltage Drain current V (BR) DSX IDSS VG1S = -4 V, VG2S = -4 V, ID = 100 A Gate 1-source cut-off voltage VG1S (OFF) VDS = 6 V, VG2S = 4.5 V, ID = 100 A Gate 2-source cut-off voltage VG2S (OFF) VDS = 6 V, VG1S = 4 V, ID = 100 A 0.5 1.0 1.5 V Forward transfer admittance Yfs VDS = 6 V, VG2S = 4.5 V, ID = 10 mA, f = 1 kHz 13 mS Input capacitance Ciss 2.1 2.7 3.3 pF Reverse transfer capacitance Crss VDS = 6 V, VG2S = 4.5 V, ID = 10 mA, f = 1 MHz 0.015 0.03 pF Power gain Gps 23 27 dB Noise figure NF VDS = 6 V, VG2S = 4.5 V, ID = 10 mA, f = 200 MHz (Figure 1) 1.1 2.2 dB 1 2003-03-27 3SK226 L1: 1 mm Ag plated copper wire, 2 turns, 8 mm ID L2: 1 mm Ag plated copper wire, 2.5 turns, 8 mm ID Figure 1 200 MHz, Gps NF Test Circuit Marking 2 2003-03-27 3SK226 3 2003-03-27 3SK226 4 2003-03-27 3SK226 5 2003-03-27 3SK226 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2003-03-27