3SK226
2003-03-27
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TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type
3SK226
TV Tuner, VHF RF Amplifier Applications
FM Tuner Applications
• Superior cross modulation performance.
• Low reverse transfer capacitance: Crss = 0.015 pF (typ.)
• Low noise figure: NF = 1.1dB (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDS 13.5 V
Gate 1-source voltage VG1S ±8 V
Gate 2-source voltage VG2S ±8 V
Drain current ID 30 mA
Drain power dissipation PD 150 mW
Channel temperature Tch 125 °C
Storage temperature range Tstg −55~125 °C
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate 1 leakage current IG1SS VDS = 0, VG1S = ±6 V, VG2S = 0 ±50 nA
Gate 2 leakage current IG2SS V
DS = 0, VG1S = 0, VG2S = ±6 V ±50 nA
Drain-source voltage V (BR) DSX V
G1S = −4 V, VG2S = −4 V, ID = 100 µA 13.5 V
Drain current IDSS V
DS = 6 V, VG1S = 0, VG2S = 4.5 V 0 0.1 mA
Gate 1-source cut-off voltage VG1S (OFF) V
DS = 6 V, VG2S = 4.5 V, ID = 100 µA 0 1.0 V
Gate 2-source cut-off voltage VG2S (OFF) V
DS = 6 V, VG1S = 4 V, ID = 100 µA 0.5 1.0 1.5 V
Forward transfer admittance Yfs VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,
f = 1 kHz 13 mS
Input capacitance Ciss 2.1 2.7 3.3 pF
Reverse transfer capacitance Crss
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,
f = 1 MHz 0.015 0.03 pF
Power gain Gps 23 27 dB
Noise figure NF
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,
f = 200 MHz (Figure 1) 1.1 2.2 dB
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3J1A
Weight: 0.013 g (typ.)
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2003-03-27
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L1: 1 mmφ Ag plated copper wire, 2 turns, 8 mm ID
L2: 1 mmφ Ag plated copper wire, 2.5 turns, 8 mm ID
Marking
Figure 1 200 MHz, Gps NF Test Circuit
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2003-03-27
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RESTRICTIONS ON PRODUCT USE
