AOT9N70/AOTF9N70/AOB9N70
700V, 9A N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 9A
R
DS(ON)
(at V
GS
=10V) < 1.2Ω
100% UIS Tested
100% R
g
Tested
AOTF9N70
TO-220F Pb Free
Tube
1000
800V@150℃
Orderable Part Number Package Type Form Minimum Order Quantity
AOT9N70 TO-220 Pb Free Tube 1000
The AOT9N70 & AOTF9N70 & AOB9N70 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
G
D
S
Top View
GD
S
TO-220
AOT9N70
TO-263
D2PAK
D
S
G
AOB9N70
G
S
TO-220F
AOTF9N70
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
* Drain current limited by maximum junction temperature.
AOTF9N70
TO-220F Pb Free
Tube
1000
236
A
W
W/
o
C
AOB9N70L TO-263 Green Tape & Reel 800
Maximum Junction-to-Case
mJ
°C/W
°C/W
Derate above 25
o
C
Parameter AOT(B)9N70 AOTF9N70
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
A,D
Power Dissipation
B
T
C
=25°C
Thermal Characteristics
4.5
Units
°C/W65
0.5
0.53
--
2.5
-55 to 150
300
Drain-Source Voltage
AOTF9N70L
700
°C
mJ
V/ns
°C
Maximum Case-to-sink
A
AOTF9N70L TO-220F Green Tube 1000
27.8
0.22
50
A
Pulsed Drain Current
C
Continuous Drain
Current
T
C
=25°C 9
I
D
±30 V
5.8
9*
5.8*
33
9*
5.8*
65 65
--
AOTF9N70L
Avalanche Current
C
Single plused avalanche energy
G
Repetitive avalanche energy
C
1.8 0.4
3.2
77
154
5
P
D
Gate-Source Voltage
T
C
=100°C
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOT(B)9N70 AOTF9N70
Rev.3.0: January 2015
www.aosmd.com Page 1 of 6
Symbol Min Typ Max Units
700
800
BV
DSS
/
∆TJ
0.84 V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3 3.9 4.5 V
R
DS(ON)
0.94 1.2 Ω
g
FS
10 S
V
SD
0.74 1 V
I
S
Maximum Body-Diode Continuous Current 9 A
I
SM
33 A
C
iss
1085 1357 1630 pF
C
oss
90 113 147 pF
C
rss
6 7.4 11 pF
R
g
246Ω
Q
g
23 28.5 35 nC
Q
gs
5.5 6.8 8.2 nC
Q
gd
9.3 11.6 18 nC
t
D(on)
35 ns
t
r
61 ns
t
D(off)
76 ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Static Drain-Source On-Resistance V
GS
=10V, I
D
=4.5A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
I
DSS
Zero Gate Voltage Drain Current V
DS
=700V, V
GS
=0V
Diode Forward Voltage
V
DS
=5V
I
D
=250µA
V
DS
=560V, T
J
=125°C
Turn-Off DelayTime
V
GS
=10V, V
DS
=350V, I
D
=9A,
R
G
=25Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=560V, I
D
=9A
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=4.5A
Forward Transconductance
Breakdown Voltage Temperature
Coefficient I
D
=250µA, V
GS
=0V
BV
DSS
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
µA
V
DS
=0V, V
GS
=±30V
V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
D(off)
t
f
48 ns
t
rr
300 375 450 ns
Q
rr
6 7.5 9µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time I
F
=9A,dI/dt=100A/µs,V
DS
=100V
Turn-Off Fall Time
Body Diode Reverse Recovery Charge I
F
=9A,dI/dt=100A/µs,V
DS
=100V
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
Rev.3.0: January 2015 www.aosmd.com Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
18
0 5 10 15 20 25 30
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=5.5V
6V
10V
6.5V
0.1
1
10
100
2 4 6 8 10
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-
55
°
C
VDS=40V
25°C
125
°
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 4 8 12 16 20
RDS(ON) (Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
V
GS
=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
ID=4.5A
40
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Voltage
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.3.0: January 2015 www.aosmd.com Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 5 10 15 20 25 30 35 40
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=560V
ID=9A
1
10
100
1000
10000
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.01
0.1
1
10
100
1 10 100 1000 10000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
0.01
0.1
1
10
100
1 10 100 1000 10000
ID(Amps)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF9N70 (Note F)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
1s
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT(B)9N70 (Note F)
Operating Area for AOTF9N70 (Note F)
0
2
4
6
8
10
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 12: Current De-rating (Note B)
0.01
0.1
1
10
100
1 10 100 1000 10000
ID(Amps)
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOTF9N70L (Note F)
10µs
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
1s
Rev.3.0: January 2015 www.aosmd.com Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT(B)9N70 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.53°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Ton
T
PDM
Single Pulse
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF9N70 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse Ton
T
PDM
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF9N70 (Note F)
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF9N70 L(Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse Ton
T
PDM
Rev.3.0: January 2015 www.aosmd.com Page 5 of 6
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.3.0: January 2015 www.aosmd.com Page 6 of 6