DATA SH EET
Product specification
Supersedes data of 1996 Jul 30 1999 Aug 11
DISCRETE SEMICONDUCTORS
BF992
Silicon N-channel dual gate
MOS-FET
M3D071
1999 Aug 11 2
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
APPLICATIONS
•VHF applications such as VHF television tuners and FM
tuners with 12 V supply voltage. The device is also
suitable for use in professional communications
equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
micro-miniature SOT143B package with source and
substrate interconnected.
The transistor is protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
PINNING
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PIN SYMBOL DESCRIPTION
1 s, b source
2 d drain
3g
2
gate 2
4g
1
gate 1
Fig.1 Simplified outline (SOT143B) and symbol.
Marking code: M92.
handbook, halfpage
s,b
d
g1
g2
43
21
Top view
MAM039
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VDS drain-source voltage (DC) −20 V
IDdrain current (DC) −40 mA
Ptot total power dissipation Tamb =60°C−200 mW
Yfsforward transfer admittance f = 1 kHz; ID= 15 mA; VDS =10V;
V
G2-S =4V 25 −mS
Cig1-s input capacitance at gate 1 f = 1 MHz; ID= 15 mA; VDS =10V;
V
G2-S =4V 4−pF
Crs reverse transfer capacitance f = 1 MHz; ID= 15 mA; VDS =10V;
V
G2-S =4V 30 −fF
F noise figure GS= 2 mS; ID= 15 mA; VDS =10V;
V
G2-S = 4 V; f = 200 MHz 1.2 −dB
Tjoperating junction temperature −150 °C
1999 Aug 11 3
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a ceramic substrate, 8 mm ×10 mm ×0.7 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −20 V
IDdrain current −40 mA
IG1 gate 1 current −±10 mA
IG2 gate 2 current −±10 mA
Ptot total power dissipation Tamb ≤60 °C; see Fig.2; note 1 −200 mW
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −150 °C
Fig.2 Power derating curves.
handbook, halfpage
0
100
0 200100
200
(mW)
Ptot max
MBL033
Tamb ( C)
o
1999 Aug 11 4
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
THERMAL CHARACTERISTICS
Note
1. Device mounted on a ceramic substrate, 8 mm ×10 mm ×0.7 mm.
STATIC CHARACTERISTICS
Tj=25°C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25°C; VDS =10V; V
G2-S = 4 V; ID= 15 mA; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air note 1 460 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
±V(BR)G1-SS gate 1-source breakdown voltage VG2-S =V
DS = 0; IG1-SS =±10 mA 8 20 V
±V(BR)G2-SS gate 2-source breakdown voltage VG1-S =V
DS = 0; IG2-SS =±10 mA 8 20 V
−V(P)G1-S gate 1-source cut-off voltage VG2-S =4V; V
DS = 10 V; ID=20µA 0.2 1.3 V
−V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS = 10 V; ID=20µA 0.2 1.1 V
±IG1-SS gate 1 cut-off current VG2-S =V
DS = 0; VG1-S =±7V −25 nA
±IG2-SS gate 2 cut-off current VG1-S =V
DS = 0; VG2-S =±7V −25 nA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
yfsforward transfer admittance 20 25 −mS
Cig1-s input capacitance at gate 1 f = 1 MHz −4−pF
Cig2-s input capacitance at gate 2 f = 1 MHz −1.7 −pF
Cos output capacitance f = 1 MHz −2−pF
Crs reverse transfer capacitance f = 1 MHz −30 40 fF
F noise figure f = 200 MHz; GS=2mS −1.2 −dB
1999 Aug 11 5
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
Fig.3 Output characteristics; typical values.
handbook, halfpage
12
MGE797
010
24
0
8
16
4
12
20
2468
V
DS (V)
ID
(mA)
0.1 V
0 V
−0.5 V
−0.6 V
−0.4 V
−0.3 V
−0.2 V
−0.1 V
VG1-S = 0.2 V
VG2-S = 4 V; Tj=25°C.
Fig.4 Transfer characteristics; typical values.
handbook, halfpage
−11
30
0
10
20
MGE799
0
4 V 3 V 2 V
1 V
0 V
VG2-S = 5 V
VG1-S (V)
ID
(mA)
VDS = 10 V; Tj=25°C.
Fig.5 Forward transfer admittance as a function
of drain current; typical values.
handbook, halfpage
020
30
0
10
20
MGE798
10 ID (mA)
1 V
5 V
2 V
3 V
4 V
VG2-S = 0 V
|yfs|
(mS)
VDS = 10 V; Tj=25°C.
Fig.6 Forward transfer admittance as a function
of gate 1-source voltage; typical values.
handbook, halfpage
−11
30
0
10
20
MGE800
0
Yfs
(mS)
4 V
5 V
3 V
2 V
1 V
0 V
VG2-S =
VG1-S (V)
VDS = 10 V; Tj=25°C.
1999 Aug 11 6
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
Fig.7 Inputadmittanceasa functionoffrequency;
typical values.
VDS = 10 V; VG2-S = 4 V; ID= 15 mA; Tamb =25°C.
handbook, halfpage
MGE794
102
10−2
10 102103
10−1
1
10
bis
gis
yis
(mS)
f (MHz)
handbook, halfpage
MGE793
10
1
10−1
10−210 102103
bos
gos
yos
(mS)
f (MHz)
VDS = 10 V; VG2-S = 4 V; ID= 15 mA; Tamb =25°C.
Fig.8 Output admittance as a function of
frequency; typical values.
Fig.9 Forward transfer admittance as a function
of frequency; typical values.
handbook, halfpage
25
0
MGE795
10 102103
5
10
15
20
Yfs
(mS)
f (MHz)
−bfs
gfs
VDS = 10 V; VG2-S = 4 V; ID= 15 mA; Tamb =25°C.
Fig.10 Reverse transfer admittance as a function
of frequency; typical values.
handbook, halfpage
120
0
MGE796
40
80
10 102103
yrs
(µS)
grs
−brs
f (MHz)
VDS = 10 V; VG2-S = 4 V; ID= 15 mA; Tamb =25°C.
1999 Aug 11 7
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HEywvQ
2.5
2.1 0.45
0.15 0.55
0.45
e
1.9
e1
1.7
Lp
0.1 0.10.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B 97-02-28
0 1 2 mm
scale
Plastic surface mounted package; 4 leads SOT143B
D
HE
EA
B
vMA
X
A
A1
Lp
Q
detail X
c
y
wM
e1
e
B
21
34
b1
bp
1999 Aug 11 8
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Aug 11 9
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
NOTES
1999 Aug 11 10
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
NOTES
1999 Aug 11 11
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 67
Philips Semiconductors – a worldwide compan y
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PTPhilipsDevelopmentCorporation,Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
Printed in The Netherlands 125004/03/pp12 Date of release: 1999 Aug 11 Document order number: 9397 750 06013
