MOTORCLA SC XSTRS/R F raze o ff 6367254 00485860 9 i MAXIMUM RATINGS Rating Symbol | BC; BC} BC Unit 486/488/490 Collector-Emitter Voltage VcEO 45 | 60} 80 Vde Collector-Base Voltage VcBo 45 | 60 | 80 Vde Emitter-Base Voltage VEBO 4.0 Vde Collector Current Continuous Ic 0.5 Adc Total Device Dissipation @ Ta = 25C. Pp 625 mw Derate above 25C 5.0 mWw/C Total Device Dissipation @ Tc = 26C Pp 1.5 Watt Derate above 25C 12 mWw/C Operating and Storage Junction Ty. Tstg ]-55 to +150 c Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rasc 83.3 C/W Thermal Resistance, Junction to Ambient Rasa 200 C/W BC486, A, B, L BC488, A, B, L BC490, A, B, L CASE 29-04, STYLE 17 TO-92 (TO-226AA) > 1 Collector Base 2 3 Emitter HIGH CURRENT TRANSISTORS PNP SILICON ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Refer to MPSAS55 for graphs. [ Characteristic [ Symbol [| Min. [| Typ. [| Max. [ Unit | OFF CHARACTERISTICS Coliector-Emitter Breakdown Voltage* V(BR)CEO Vde (Ic = 10 mAdc, Ip = 0} BC486 45 _ _ BCc488 60 _ _ BCc490 80 _ _ Collector-Base Breakdown Voltage V(BR)CBO Vde {I = 100 pAde, IE = 0} BC486 45 _ _ BC488 60 _ _ BC490 80 _ _ Emitter-Base Breakdown Voltage V(BR)EBO Vde (Ig = 10 Ade, Ic = 0) 4.0 -- _ Collector Cutoff Current icBo nAdc Vos = 30 Vde - Ig = 0 BC486 _ _ 100 Ves = 40 Vde ~ 16 = 0 BCc488 _ _ 100 Vcp = 60 Vde ~ Ip = 0 BC480 _ _ 100 ON CHARACTERISTICS* DC Current Gain hfe (Ic = 10 mAdc ~ VCE = 2.0 Vdc) 40 {Ic = 100 mAdec - VcE = 2.0 Vde) BC486/488/490 60 400 BC486L/488L/490L 60 100 150 BC486A/488A/490A 100 140 250 BC4868/488B/490B8 160 260 400 ig = 1 Ade Voge = 5.0 Vdc) 15 Collector Emitter Saturation Voltage VCE(sat) Vde {I = 500 mAde Ig = 50 mAdc) _ 0.25 0.50 {Ic = 1 Ade - Ig = 100 mAdc) _ 0.50 _ Base Emitter Saturation Voltage VBE(sat) Vde {Ic = 500 mAdc, Ip = 50 mAdc} _ 0.90 1.20 (le = 1 Adc Ig = 100 mAdc) 1.00 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fT MHz (Ic = 50 mAdc, VCE = 2.0 Vde, f = 100 MHz) _ 150 _ Output Capacitance Cob pF (Vcp = 10 Vdc, IE = 0, f = 1.0 MHz) = 9 _ Input Capacitance Cib pF (VBE = 0.5 Vdc, ic = 0, f = 1.0 MHz) _ 110 _ * Pulse test - Pulse width = 300 us - Duty Cycle 2%. MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-105 129% Q) Peta amet.