Product Specification PE4150 UltraCMOSTM Low Frequency Passive Mixer with Integrated LO Amplifier Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15dBm LO drive. The PE4150 operates with differential signals at the RF and IF ports and the integrated LO buffer amplifier drives the mixer core. It can be used as an upconverter or a downconverter. Features The PE4150 is manufactured on Peregrine's UltraCMOSTM process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. * High LO Isolation * Ultra-high linearity Quad MOSFET array with integrated LO amplifier * Ideal for mobile radio and Up/down conversion applications * Low conversion loss * Packaged in small 20-lead 4x4 mm QFN Figure 1. Functional Diagram RF VDD LO EN GND Gate Bias (optional) IF Figure 2. Package Type 4x4 mm 20-Lead QFN Document No. 70-0242-05 www.psemi.com (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 10 PE4150 Product Specification Table 1. AC and DC Electrical Specifications (VDD = 2.9 to 3.1 V, Temperature = -40 to +85 C unless specified otherwise) Parameters Min Typ Max Units 8 12 mA 20 uA 136 380 450 764 851 935 174 470 520 776 870 941 MHz MHz MHz MHz MHz MHz LO Frequency VHF Band UHF1 Band UHF2 Band 700 MHz 800 MHz 900 MHz 245.65 270.35 340.35 873.65 741.35 825.35 283.65 360.35 410.35 885.65 760.35 831.35 MHz MHz MHz MHz MHz MHz IF Output Frequency 44.85 109.65 MHz -10 -6 dBm 2 dBm 8 8.7 dB dB Current Drain (a function of frequency) Off state leakage current RF Input Frequency VHF Band UHF1 Band UHF2 Band 700 MHz 800 MHz 900 MHz LO Input Power RF Input Power Conversion Loss VHF, UHF1, UHF2 700, 800, and 900 MHz 6.5 7.5 3rd Order Input Intercept (IIP3)2 20 25 dBm 2nd Order Input Intercept (IIP2) VHF, UHF1, UHF2 700, 800 and 900 MHz 41 35 60 50 dBm dBm RF to IF Isolation1 VHF, UHF1, UHF2 700, 800 and 900 MHz 35 25 50 45 dB dB LO to IF Isolation 20 30 dB LO to RF Isolation 25 30 dB Notes: 1. The RF to IF Isolation is measured with an input frequency equal with IF. 2. IIP3 is measured with two tones at 0dBm, 100kHz spacing (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 10 Document No. 70-0242-05 UltraCMOSTM RFIC Solutions PE4150 Product Specification Figure 3. Pin Configuration (Top View) GND VDD VDD N/C N/C 20 19 18 17 16 Symbol RF_M N/C 4 12 RF_P N/C 5 11 GND 10 INA IF_M GND 13 9 14 3 GND 2 8 INB IF_P MixBias 7 15 6 1 VDD GND EN Table 4. Absolute Maximum Ratings Max Units VDD Supply Voltage 4.0 V VDS Maximum DC plus peak AC across drain-source 3.3 V IDS-DC Maximum DC current across drain-source 6 mA IDS-AC Maximum AC current across drain-source 36 mAp-p Symbol 150 C Storage temperature range Tj Operating Junction Temperature 125 C ESD Voltage (HBM, MIL_STD 883 Method 3015.7) 1000 V VESD Function 1 GND Ground 2 INB Negative LO Input 3 INA Positive LO Input 4 N/C No Connect 5 N/C No Connect 6 EN Enable Pin (active low) 7 VDD VDD 8 IF_P Positive IF port 9 GND Ground 10 IF_M Negative IF port 11 GND Ground 12 RF_P Positive RF Input 13 RF_M Negative LO Input 14 GND Ground 15 MixBias External Mixer Bias 16 N/C No Connect 17 N/C No Connect 18 VDD VDD 19 VDD VDD 20 GND Ground Electrostatic Discharge (ESD) Precautions When handling this UltraCMOSTM device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOSTM devices are immune to latch-up. Device Description Table 3. Operating Ranges VDD VDD Power Supply Voltage 2.9 TOP Operating temperature range -40 Typ 3.0 Max Units 3.1 V 85 C Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE4150 in the 20-lead 4x4 QFN package is MSL1. Document No. 70-0242-05 www.psemi.com -65 Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. The RF and IF pins are differential signals connected directly to the passive mixer. The LO input can be differential or single-ended. Symbol Parameters/Conditions Min Min TST Table 2. Pin Descriptions Pin # Parameters/Conditions The PE4150 passive broadband Quad MOSFET array is designed for use in up-conversion and down-conversion applications for high performance systems such as mobile radios, cellular infrastructure equipment, and STB/CATV systems. The PE4150 is an ideal mixer core for a wide range of mixer products, including module level solutions that incorporate baluns or other single-ended matching structures enabling three-port operation. The performance level of this passive mixer is made possible by the very high linearity afforded by Peregrine's UltraCMOSTM process. (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 10 PE4150 Product Specification Evaluation Kit The Mixer Evaluation Kit board was designed to ease customer evaluation of the PE4150 Quad MOSFET Mixer with intergrated LO amplifier. Figure 4. Evaluation Board Layout Peregrine Specification 101/0201 The RF and IF ports are connected through 50ohm transmission lines and 1:4 transmission line transformers to J5 and J7, respectively. The LO ports are connected through 50ohm transmission lines to J4 and J6, respectively, and can support either a single-ended or differential signal drive. With a single-ended input, no termination is needed on the un-used port. The board is constructed of a two metal layer FR4 with a total thickness of 0.062". The bottom layer provides ground for the RF transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 0.037", trace gaps of 0.008", dielectric thickness of 0.059" and metal thickness of 0.0015". J3 provides an optional external DC bias that can be applied to the LO input, if there is DC component to the applied RF input. To use this option, transformers T2 and T3 must be carefully chosen to allow the use of a non-zero commonmode level. J9 can be used to enable or disable the part. The chip enable /EN is active low. De-coupling capacitors are provided on the VDD traces. These capacitors should be placed as close to the DVDD pin as possible. Applications Support If you have a problem with your evaluation kit or if you have applications questions, please contact applications support: E-Mail: help@psemi.com (fastest response) Phone: (858) 731-9400 (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 4 of 10 Document No. 70-0242-05 UltraCMOSTM RFIC Solutions PE4150 Product Specification Figure 5. Evaluation Board Schematic Peregrine Specification 102/0396 J11 HEADER 2 Z=50 Ohm R1 Place C1,C2,C4,C5 close to DVDD Pin. VDD J1 DNI OUTB (NOT USED - SEE NOTE 5) DNI VDD 1 2 VDD C1 10pF R2 C2 0.01F Z=50 Ohm J2 DNI Z=50 Ohm J3 DNI OUTA (NOT USED - SEE NOTE 5) DNI C3 10F C4 10pF C5 0.01F MIXBIAS (OPTIONAL) 1 GND 2 INB 16 18 19 17 N/C N/C 14 DNI RF_N 13 RF_P 12 GND 11 T3 ETK4-2T 6 R15 51 Ohm 1 6 R9 2 3 Z=50 Ohm DNI 4 IF_N R16 DNI R17 0 OHM J5 SMASM RF R13 DNI 10 N/C GND 51pF 9 C7 5 0 OHM R14 DNI R8 GND N/C EN R12 INA 15 U1 MLPQ4X4 INA IF_P 4 8 3 Z=50 Ohm R5 DNI MIXBIAS 51 Ohm LO J6 SMASM VDD_2 51pF GND C6 R7 VDD_1 R4 0 OHM R6 DNI VDD_2 Z=50 Ohm 7 J4 DNI INB 20 R3 0 OHM R10 DNI R11 DNI VDD R18 J10 DNI 1 2 3 R19 DNI DNI VDD LG2 R20 DNI R21 DNI J8 DNI LG1 R22 J9 CON3 T2 ETK4-2T LG0 6 VDD 4 1 2 3 0 OHM 1 2 VDD 3 1 2 3 R23 DNI Mounting Holes on PCB 1 1 1 1 R24 DNI MTG1 MTG2 MTG3 MTG4 R25 Z=50 Ohm DNI J7 SMASM IF Document No. 70-0242-05 www.psemi.com (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 5 of 10 PE4150 Product Specification Typical Performance Plots Figure 6. Conversion Loss vs Temperature Figure 7. Conversion Loss vs LO Power & VDD (VDD = 3V; LO Pwr = -10 dBm) +25 deg C +85 deg C 9 9 8 8 7 7 6 6 Loss [dB] Loss [dB] -40 deg C (Temp = 25 deg C) 5 4 LO_Pw r LO_Pw r LO_Pw r LO_Pw r LO_Pw r LO_Pw r 5 4 3 3 2 2 1 1 0 0 0 200 400 600 800 0 1000 200 Figure 8. Linearity vs Temperature 80 600 800 1000 Figure 9. Linearity vs LO Power (VDD = 3V; LO Pwr = -10 dBm) IIP2 @ -40 deg C IIP2 @ +85 deg C IIP3 @ +25 deg C 400 RF Frequency [MHz] RF Frequency [MHz] (VDD = 3V; Temp = +25 deg C) IIP2 @ +25 deg C IIP3 @ -40 deg C IIP3 @ +85 deg C 70 70 60 60 50 50 40 30 20 10 IIP2 w / LO_Pw r IIP2 w / LO_Pw r IIP3 w / LO_Pw r IIP3 w / LO_Pw r 80 Loss[dBm] [dB] IIP2/IIP3 Loss[dBm] [dB] IIP2/IIP3 = -11dBm; VDD=3V = -10dBm; VDD=3V = -6dBm;VDD=3V = -5dBm; VDD=3V = -10dBm; VDD = 2.91V = -10dBm; VDD = 3.09 = -11dBm = -6dBm = -11dBm = -6dBm IIP2 w / LO_Pw r IIP2 w / LO_Pw r IIP3 w / LO_Pw r IIP3 w / LO_Pw r = -10dBm = -5dBm = -10dBm = -5dBm 40 30 20 10 0 0 0 200 400 600 800 RF Frequency [MHz] (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 6 of 10 1000 0 200 400 600 800 1000 RF Frequency [MHz] Document No. 70-0242-05 UltraCMOSTM RFIC Solutions PE4150 Product Specification Typical Performance Plots Figure 10. Linearity vs VDD Figure 11. Isolation vs Temperature (Temp = +25 deg C; LO Pwr = -10 dBm) IIP2 w / VDD = 2.91V IIP2 w / VDD = 3.09V IIP3 w / VDD = 3.0V 80 (VDD = 3V; LO Pwr = -10 dBm) IIP2 w / VDD = 3.0V IIP3 w / VDD = 2.91V IIP3 w / VDD = 3.09 70 70 50 Loss [dB] Isolation [dB] 50 40 30 20 40 30 20 10 10 0 0 0 200 400 600 800 0 1000 200 Figure 12. Isolation vs LO Power 50 50 Loss [dB] Isolation [dB] 60 40 30 40 30 20 20 10 10 0 0 400 600 RF Frequency [MHz] Document No. 70-0242-05 www.psemi.com 1000 800 1000 LO-IF Iso w / VDD=2.91V LO-IF Iso w / VDD=3.0V LO-IF Iso w / VDD=3.09V RF-IF Iso w / VDD=2.91V RF-IF Iso w / VDD=3.0V RF-IF Iso w / VDD=3.09V 70 60 200 800 (Temp = +25 deg C; LO Pwr = -10 dBm) LO-IF Iso w / LO_Pw r = -11dBm LO-IF Iso w / LO_Pw r = -10dBm LO-IF Iso w / LO_Pw r = -6dBm LO-IF Iso w / LO_Pw r = -5dBm RF-IF Iso w / LO_Pw r = -11dBm RF-IF Iso w / LO_Pw r = -10dBm RF-IF Iso w / LO_Pw r = -6dBm RF-IF Iso w / LO_Pw r = -5dBm 0 600 Figure 13. Isolation vs VDD (VDD = 3V; Temp = +25 deg C) 70 400 RF Frequency [MHz] RF Frequency [MHz] Loss [dB] Isolation [dB] LO-IF Iso @ +25 deg C RF-IF Iso @ -40 deg C RF-IF Iso @ +85 deg C 60 60 Loss [dB] IIP2/IIP3 [dBm] LO-IF Iso @ -40 degC LO-IF Iso @ +85 deg C RF-IF Iso @ +25 deg C 0 200 400 600 800 1000 RF Frequency [MHz] (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 7 of 10 PE4150 Product Specification Figure 14. Package Drawing 4x4 mm 20-lead QFN, BOM 19/0106 (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 8 of 10 Document No. 70-0242-05 UltraCMOSTM RFIC Solutions PE4150 Product Specification Figure 15. Tape and Reel Drawing Tape Feed Direction Pin 1 A0 = 4.35 B0 = 4.35 K0 = 1.1 Top of Device Device Orientation in Tape Figure 16. Marking Specification 4150 YYWW ZZZZZ YYWW = Date Code (Year, Work Week) ZZZZZ = Last five digits of PSC Lot Number Table 5. Ordering Information Order Code Part Marking Description Package Shipping Method EK-4150-01 PE4150 -EK PE4150 - 20QFN 4x4mm-EK Evaluation Kit 1 / Box PE4150 MLI 4150 PE4150 G - 20QFN 4x4mm-75A Green 20-lead 4x4mm QFN 75 units / Tube PE4150 MLI-Z 4150 PE4150 G -20QFN 4x4mm-3000C Green 20-lead 4x4mm QFN 3000 units / T&R Document No. 70-0242-05 www.psemi.com (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 9 of 10 PE4150 Product Specification Sales Offices The Americas Peregrine Semiconductor Corporation Peregrine Semiconductor, Asia Pacific (APAC) 9380 Carroll Park Drive San Diego, CA 92121 Tel: 858-731-9400 Fax: 858-731-9499 Shanghai, 200040, P.R. China Tel: +86-21-5836-8276 Fax: +86-21-5836-7652 Europe Peregrine Semiconductor Europe Batiment Maine 13-15 rue des Quatre Vents F-92380 Garches, France Tel: +33-1-4741-9173 Fax : +33-1-4741-9173 High-Reliability and Defense Products Peregrine Semiconductor, Korea #B-2607, Kolon Tripolis, 210 Geumgok-dong, Bundang-gu, Seongnam-si Gyeonggi-do, 463-943 South Korea Tel: +82-31-728-3939 Fax: +82-31-728-3940 Peregrine Semiconductor K.K., Japan Teikoku Hotel Tower 10B-6 1-1-1 Uchisaiwai-cho, Chiyoda-ku Tokyo 100-0011 Japan Tel: +81-3-3502-5211 Fax: +81-3-3502-5213 Americas San Diego, CA, USA Phone: 858-731-9475 Fax: 848-731-9499 Europe/Asia-Pacific Aix-En-Provence Cedex 3, France Phone: +33-4-4239-3361 Fax: +33-4-4239-7227 For a list of representatives in your area, please refer to our Web site at: www.psemi.com Data Sheet Identification Advance Information The product is in a formative or design stage. The data sheet contains design target specifications for product development. Specifications and features may change in any manner without notice. Preliminary Specification The data sheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The data sheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer Notification Form). (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 10 of 10 The information in this data sheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user's own risk. No patent rights or licenses to any circuits described in this data sheet are implied or granted to any third party. Peregrine's products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, and UTSi are registered trademarks and UltraCMOS, HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp. Document No. 70-0242-05 UltraCMOSTM RFIC Solutions