PE4150MLI - Peregrine Semiconductor Corp.

Page 1 of 10

Document No. 70-0242-05 │www. psemi.com

V

DD

GND

LO

RF

IF

Gate

Bias

(optional)

EN

The PE4150 is an ultra-high linearity Quad MOSFET mixer with

an integrated LO amplifier. The LO amplifier allows for LO

drive levels of less than 0dBm to produce IIP3 values similar to

a Quad MO SF ET Arr ay dr iv en with a 15 dBm LO drive. T h e

PE4150 operates with differential signals at the RF and IF ports

and the integrated LO buffer ampliﬁer drives the mixer core. It

can be used as an upconverter or a downconverter.

The PE4150 is manufactured on Peregrine’s UltraCMOS™

pro c ess, a patented variation of silicon -on-insulator (SOI )

technology on a sapphire substrate, offering the performance

of GaAs with the econom y an d i nte gr ation of conventional

CMOS.

Pro duct Specification

UltraCMOS™ Low Frequency Passive

Mixer with Integrated LO Amplifier

Product Description

Figure 1. Functional Diagram

PE4150

Features

• Ultra -high linea rity Quad MOSFET array

wi th int egrated LO am pli fi er

• Ideal for mobile radio and Up/down

conversion applications

• Low conversion loss

• Hi gh LO Isol a t ion

• Packaged in small 20-lead 4x4 mm QFN

Fig ure 2. Package Typ e

4x4 mm 20-Lead QFN

Product Specification

PE4150

Page 2 of 10

Table 1. AC and DC Electrical Specifications (VDD = 2.9 to 3.1 V, Temperature = -40 to +85 °C unless specified otherwise)

Notes : 1. The RF to IF Is olati on is me as ured with an input frequenc y equal with IF.

2. IIP3 is measured with two tones at 0dBm, 100kHz spacing

Parameters Mi n Typ Max Units

Current Drain (a function of frequency) 8 12 mA

Off state leakage current 20 uA

RF Input Fr equen cy

VHF Band

UH F1 Ba nd

UH F2 Ba nd

70 0 MHz

80 0 MHz

90 0 MHz

136

380

450

764

851

935

174

470

520

776

870

941

MHz

LO Frequency

VHF Band

UH F1 Ba nd

UH F2 Ba nd

70 0 MHz

80 0 MHz

90 0 MHz

245.65

270.35

340.35

873.65

741.35

825.35

283.65

360.35

410.35

885.65

760.35

831.35

MHz

IF Output Frequency 44.85 109.65 MHz

LO Input Power -10 -6 dBm

RF Input Power 2 dBm

Conversion Loss

VHF, UHF1, UHF2

700, 80 0, an d 900 MHz

6.5

7.5

8

8.7

dB

3rd Order Input Intercept (IIP3)2 20 25 dBm

2nd Order Input Intercept (IIP2)

VHF, UHF1, UHF2

700, 80 0 an d 900 MH z

41

35

60

50

dBm

RF to IF Isolation1

VHF, UHF1, UHF2

700, 80 0 an d 900 MH z

35

25

50

45

dB

LO to IF Isolation 20 30 dB

LO to RF Isolation 25 30 dB

Product Specification

PE4150

Page 3 of 10

Document No. 70-0242-05 │www. psemi.com

Table 2 . Pin Descriptions

Table 4. Absolute Maximum Ratings

Electrostatic Discharge (ESD) Precautions

When handling this UltraCMOS™ device, observe

the same precautions that you would use with other

ESD-sensitive devices. Although this device

contains circuitry to protect it from damage due to

ESD, precautions should be taken to avoid

exceeding the specified rating.

Latc h-Up Avoidance

Unlike conventional CMOS dev ic es, UltraCMOS™

devices are immune to latch-up.

Figure 3. Pin Configuration (Top View)

Exceeding absolute maximum ratings may cause

permanent damage. Operation should be restricted

to the limits in the Operating Ranges table.

Operation between operating range maximum and

absolute maximum for extended periods may reduce

reliability.

Symbol Parameters/Conditions Min Max Units

VDD Supply Voltage 4.0 V

VDS Maximum DC plus peak AC

across drain-source ±3.3 V

IDS-DC Ma ximum DC current across

drain-source 6 mA

TST Storage temperature range -65 150 °C

VESD ESD Voltage (HBM,

MI L_S T D 883 Met h od

3015.7) 1000 V

IDS-AC Maximu m AC curren t across

drain-source 36 mAp-p

Tj Operating Junction

Temperature 125 °C

Device Description

The PE4150 passive broadband Quad MOSFET

array is designed for use in up-conversion and

down-conversion applications for high performance

systems such as mobile radios, cellula r

infrastructure equipment, and STB/CATV systems.

The PE4150 is an ideal mixer core for a wide range

of mixer products, including module level solutions

that incorporate baluns or other single-ended

matching structures enabling three-port operation.

The performance level of this passive mixer is made

possible by the very high linearity afforded by

Peregrine’s UltraCMOS™ process.

The RF and IF pins are differential signals

connected directly to the passive mixer. The LO

input can be differential or single-ended.

Pin # Symbol Function

1 GND Ground

2 INB Negative LO Input

3 INA Positive LO Input

4 N/C No Connect

5 N/C No Connect

6 EN Enable Pin (active low)

7 VDD V

DD

8 IF_P Positive IF port

9 GND Ground

10 IF_M Negative IF port

11 GND Ground

12 RF_P Positive RF Input

13 RF_M Negative LO Input

14 GND Ground

15 MixBias External Mixer Bias

16 N/C No Connect

17 N/C No Connect

18 VDD V

DD

19 VDD V

DD

20 GND Ground

EN

V

DD

IF_P

GND

IF_M

1

20

19

18

17

16

15

14

13

12

11

6

7

8

9

10

2

3

4

5

GND

INB

INA

N/C

N/C GND

RF_P

RF_M

GND

MixBias

N/C

V

DD

V

DD

GND

Symbol Parameters/Conditions Min Typ Max Units

VDD VDD Power Supply

Voltage 2.9 3.0 3.1 V

TOP Operating temperature

range -40 85 °C

Table 3. Operating Ranges

Moist u re Sen sit i vit y L evel

The Moisture Sensitivity Level rating for the PE4150

in the 20-lead 4x4 QFN package is MSL1.

Product Specification

PE4150

Page 4 of 10

Evaluation Kit Figure 4. Evaluation Board Layout

Peregr ine S pec ification 101/ 0201

The Mixer Evaluation Kit board was designed to

ease customer evalua tion of the PE4150 Quad

MOS FET Mixer with int ergrated L O a mplifier.

The RF and IF ports are connected through

50ohm transmission lines and 1:4 transmission

line transformers to J5 and J7, respectively. The

LO ports ar e conn ec t ed thr ough 50 ohm

transmission lines to J4 and J6, respectively, and

can support either a single-ended or differential

signal drive. With a single-ended input, no

termination is needed on the un-used port.

The board is constructed of a two metal layer FR4

with a total thickness of 0.062". The bottom layer

provides ground for the RF transmission lines.

The transmission lines were designed using a

coplanar waveguide with ground plane model

using a trace wi dt h of 0.037" , trac e ga ps of 0.008",

dielectric thickness of 0.059" and metal thickness

of 0.001 5" .

J3 provides an optional external DC bias that can

be applied to the LO input, if there is DC

compon ent to the applied RF input. To use this

option, transformers T2 and T3 must be carefully

chos en to all ow th e use of a no n- z ero com m o n-

mode level.

J9 can be used to enable or disable the part. The

chip enab le /EN is active low.

De-coupling capacitors are provided on the VDD

traces. These capacitors should be placed as

clos e to th e DVDD pi n as possibl e.

Applications Support

If you have a problem with your evaluation kit or if

you have applications questions, please contact

applications support:

E-Mail: help@psemi.com (fastest re sponse)

Phone: (85 8) 731-9400

Product Specification

PE4150

Page 5 of 10

Document No. 70-0242-05 │www. psemi.com

Figure 5. Evaluation Board Schematic

Peregr ine S pec ification 102/ 0396

IN

B

Z=50 Ohm

INA

IF

MIXBIAS

OUTA

OUTB

Place C1,C2,C4,C5 close to DVDD Pin.

Z=50 Ohm

RF

Mounting Holes on PCB

(NOT USED - SEE NOTE 5)

L

O

(OPTIONAL)

R21

DNI

J6

SMASM

R2

DNI

R1

DNI

1

2

3

J10

DNI

R18

DNI

R22

0 OHM

J1

DNI

R10

DNI

J4

DNI

1

2

J11

HEADER 2

1GND

2INB

3INA

4N/C

5N/C

6EN

7VDD_2

8IF_P

9GND

10 IF_N

11

GND

12

RF_P

13

RF_N

14

GND

15

MIXBIAS

16

N/C

17

N/C

18

VDD_2

19

VDD_1

20

GND

U1

MLPQ4X4

C7 51pF

1

4

6

3

2

T2

ETK4-2T

R15

51 Ohm

R23

DNI

R7

51 Ohm

1

2

3

J8

DNI

R5

DNI

R17

0 OHM

C4

10pF

C6 51pF

R11

DNI

R16

DNI

J2

DNI

J7

SMASM

1MTG4

R25

DNI

1MTG2

R20

DNI

R3

0 OHM

R12

0 OHM

C3

10µF

R6

DNI

R4

0 OHM

1

4

6

3

2

T3

ETK4-2T

C5

0.01µF

R8

DNI

J5

SMASM

1MTG1

R19

DNI

R13

DNI

1MTG3

C1

10pF

J3

DNI

R9

DNI

R24

DNI

R14

DNI

1

2

3

J9

CON3

C2

0.01µF

VDD

LG2

LG1

LG0

Product Specification

PE4150

Page 6 of 10

Typical Performan ce Plots

Figure 7. Conversion Loss vs LO Power & VDD Figure 6. Conversion Loss vs Temperature

Figure 8. Linearity vs Temperature Figure 9. Linearity vs LO Power

(VDD = 3V; LO Pwr = -10 dBm) (Temp = 25 deg C)

(VDD = 3V ; LO Pwr = -10 dBm) (VDD = 3V ; Temp = +25 de g C)

0

1

2

3

4

5

6

7

8

9

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

-40 deg C +25 deg C +85 deg C

RF

0

1

2

3

4

5

6

7

8

9

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

LO_Pw r = -11dBm; VDD=3V

LO_Pw r = -10dBm; VDD=3V

LO_Pw r = -6dBm;VDD=3V

LO_Pw r = -5dBm; VDD=3V

LO_Pw r = -10dBm; VDD = 2.91V

LO_Pw r = -10dBm; VDD = 3.09

RF

0

10

20

30

40

50

60

70

80

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

IIP2 @ -40 deg C IIP2 @ +25 deg C

IIP2 @ +85 deg C IIP3 @ -40 deg C

IIP3 @ +25 deg C IIP3 @ +85 deg C

IIP2/IIP3 [dBm]

RF

0

10

20

30

40

50

60

70

80

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

IIP2 w / LO_Pw r = -11dBm IIP2 w / LO_Pw r = -10dB

m

IIP2 w / LO_Pw r = -6dBm IIP2 w / LO_Pw r = -5dBm

IIP3 w / LO_Pw r = -11dBm IIP3 w / LO_Pw r = -10dB

m

IIP3 w / LO_Pw r = -6dBm IIP3 w / LO_Pw r = -5dBm

IIP2/IIP3 [dBm]

RF

Product Specification

PE4150

Page 7 of 10

Document No. 70-0242-05 │www. psemi.com

Figure 10. Linearity vs VDD Figure 11. Isolation vs Temperature

Figure 12. Isolation vs LO Power Figure 13. Isolation vs VDD

(Temp = +25 de g C; LO Pwr = -10 dBm) (VDD = 3V; LO Pwr = -10 dBm)

(VDD = 3V ; Temp = +25 deg C) (Temp = +25 deg C; LO Pwr = -10 dBm)

Typical Performan ce Plots

0

10

20

30

40

50

60

70

80

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

IIP2 w / VDD = 2.91V IIP2 w / V DD = 3.0V

IIP2 w / VDD = 3.09V IIP3 w / V DD = 2.91V

IIP3 w / VDD = 3.0V IIP3 w / V DD = 3.09

IIP2/IIP3 [dBm]

RF

0

10

20

30

40

50

60

70

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

LO-IF Iso @ -40 degC LO-IF Iso @ +25 deg C

LO-IF Iso @ +85 deg C RF-IF Iso @ -40 deg C

RF-IF Iso @ +25 deg C RF-IF Iso @ +85 deg C

Isolation [dB]

RF

0

10

20

30

40

50

60

70

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

LO-IF Iso w / LO_Pw r = -11dBm

LO-IF Iso w / LO_Pw r = -10dBm

LO-IF Iso w / LO_Pw r = -6dBm

LO-IF Iso w / LO_Pw r = -5dBm

RF-IF Iso w / LO_Pw r = -11dBm

RF-IF Iso w / LO_Pw r = -10dBm

RF-IF Iso w / LO_Pw r = -6dBm

RF-IF Iso w / LO_Pw r = -5dBm

Isolation [dB]

RF

0

10

20

30

40

50

60

70

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

LO-IF Iso w / VDD=2.91V

LO-IF Iso w / VDD=3.0V

LO-IF Iso w / VDD=3.09V

RF-IF Iso w / VDD=2.91V

RF-IF Iso w / VDD=3.0V

RF-IF Iso w / VDD=3.09V

Isolation [dB]

RF

Product Specification

PE4150

Page 8 of 10

Figure 14. Package Drawing

4x4 mm 20-lead QFN, BOM 19/ 0 10 6

Product Specification

PE4150

Page 9 of 10

Document No. 70-0242-05 │www. psemi.com

Table 5. Ordering Information

Figure 16. Marking Specification

4150

YYWW

ZZZZZ

YYWW = Date Code (Year, Work Week)

ZZZZZ = Last five digits of PSC Lot Number

Orde r Code Part Marking Description Package Shi ppi ng Method

EK-4150-01 PE4150 -EK PE4150 – 20QFN 4x4mm-EK Eva l uation Kit 1 / Box

PE4150 MLI 4150 PE4150 G - 20QFN 4x4mm-75A Green 20-lead 4x4mm QFN 75 units / Tube

PE4 150 MLI -Z 4150 PE4 150 G –20QFN 4x 4 m m- 3 00 0C Gr ee n 20-lead 4x 4mm QFN 3000 units / T&R

Figure 15. Tape and Reel Drawing

Device Orientation in Tape

Top of

Device

Pin 1

Tape Feed Dire c t ion

A0 = 4.35

B0 = 4.35

K0 = 1.1

Product Specification

PE4150

Page 10 of 10

Sales Offices

The Americas

Peregrine Semiconductor Corporation

9380 Carroll Park Drive

San Diego, CA 92121

Tel: 858-731-9400

Fax: 858-731-9499

Europe

Peregrine Semiconductor Europe

Bâtiment Maine

13-15 rue des Q uatre Vents

F-92380 Garches , France

Tel: +33-1-4741-9173

Fax : +3 3-1 -4741 -917 3

For a list of representatives in your area, please r efer to our W eb site at: www.psemi.com

Data Sheet Identification

Advance Information

The product is in a formative or design stage. The data

sheet contains design target specifications for product

development. Spec ifications and features may change in

any manner without notice.

Preliminary Specification

The data sheet contains preliminar y data. Additional data

may be added at a later date. Peregrine reserves the right

to change specifications at any time without notice in order

to supply the best possible product.

Product Specification

The data sheet contains final data . In the event Peregrine

dec ide s to cha nge the spe c ific a tions, Peregr in e will notify

customers of the intended changes by issuing a CNF

(Customer Notification Form).

The information in this dat a sheet is believed to be reliable.

Howeve r, Pere grin e assume s no liabilit y for th e use of this

information. Use shall be entir ely at the user’s own risk.

No patent rights or licenses to any circuits described in this

data sheet are implied or granted to any third party.

Peregrine’s pr oducts are not designed or intended f or use in

devices or systems intended for surgical implant, or in other

applications intended to support or sustain life, or in any

application in which t he failure of the Peregrine product could

create a situat ion in which personal injury or death m ight occur.

Peregr ine assumes no liability for damages, including

consequential or incident al damages, arising out of the use of

its products in such applications.

The Peregrine name, logo, and UTSi are registered trademarks

and UltraCMOS, HaRP, MultiSwitch and DuNE are trademarks

of Peregrine Semiconductor Corp.

High-Reliability and Defense Products

Americas

San Diego, CA, USA

Phone: 858-731-9475

Fax: 848-731-9499

Europe/Asia-Pacific

Aix-En-Provence Cedex 3, France

Phone: +33-4-4239-3361

Fax: +33-4-4239-7227

Peregri ne Semiconduc tor, Asia Pacific (AP AC)

Shanghai, 200040, P.R. China

Tel: +86-21-5836-8276

Fax: +86-21-5836-7652

Peregrine Semiconductor, Korea

#B-2607, Kolon Tripolis, 210

Geumgok-dong, Bundang- gu, Seongnam-si

Gyeonggi-do, 463-943 Sout h Korea

Tel: +82-31-728-3939

Fax: +82-31-728-3940

Peregrine Semiconductor K.K., Japan

Teiko k u Hote l Tower 10B-6

1- 1-1 Uchisaiwai-c ho, Chiy o da- k u

Tokyo 100-0011 Japan

Tel: +81-3-3502-5211

Fax: +81-3-3502-5213