1www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FFPF30UP20ST Rev. A1
FFPF30UP20ST 30 A, 200 V, Ultrafast Diode
FFPF30UP20ST
Features
Applications
• Output Rectifiers
• Switching Mode Power Supply
•Free-Wheeling Diode for Motor Application
•Power Switching Circuits
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 200 V
VRWM Working Peak Reverse Voltage 200 V
VRDC Blocking Voltage 200 V
IF(AV) Average Rectified Forward Current @ TC = 85°C30 A
IFSM Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
300 A
TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C
Symbol Parameter Max Unit
RθJC Maximum Thermal Resistance, Junction to Case 3.0 °C/W
Device Marking Device Package Reel Size Tape Width Quantity
F30UP20ST FFPF30UP20STTU TO-220F -- 50
1. Cathode 2. Anode
1TO-220F 12
1. Cathode 2. Anode
tm
February 2009
30 A, 200 V, Ultrafast Diode
The FFPF30UP20ST is a ultrafast diode with low forward voltage
drop. This device is intended for use as freewheeling and
clamping diodes in a variety of switching power supplies and
other power switching applications. It is specially suited for use
in switching power supplies and industrial application.
•Ultrafast Recovery trr = 50 ns (@ IF = 30 A)
• Max Forward Voltage, VF = 1.15 V (@ TC = 25°C)
• Reverse Voltage, VRRM = 200 V
• Avalanche Energy Rated
• RoHS Compliant
2www.fairchildsemi.com
FFPF30UP20ST 30 A, 200 V, Ultrafast Diode
Electrical Characteristics TC = 25°C unless otherwise noted
*
Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
Test Circuit and Waveforms
Symbol Parameter Min. Typ. Max. Unit
VF *IF = 30 A
IF = 30 A
TC = 25 °C
TC = 100 °C
-
-
-
-
1.15
1.0
V
V
IR * VR = 200 V
VR = 200 V
TC = 25 °C
TC = 100 °C
-
-
-
-
100
500
µA
µA
trr IF = 1 A, di/dt = 100 A/µs, VCC = 30 V
IF = 30 A, di/dt = 200 A/µs, VCC = 130 V
TC = 25 °C
TC = 25 °C
-
-
-
-
40
50
ns
ns
ta
tb
Qrr
IF = 30 A, di/dt = 200 A/µs, VCC = 130 V TC = 25 °C
TC = 25 °C
TC = 25 °C
-
-
-
22
14
67
-
-
-
ns
ns
nC
WAVL Avalanche Energy (L = 40 mH) 20 - - mJ
©2009 Fairchild Semiconductor Corporation
FFPF30UP20ST Rev. A1
3www.fairchildsemi.com
FFPF30UP20ST 30 A, 200 V, Ultrafast Diode
Typical Performance Characteristics
Figure 1. Typical Forwa rd Voltage Drop Figure 2. Typical Reverse Current
Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time
Figure 5. Typical Reverse Recovery Cur rent Figure 6. Forward Current Deration Curve
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1
10
100
TC = 100oC
FORWARD CURRENT, IF [A]
FORWA RD VOLTA G E, VF [V]
TC = 25oC
0 50 100 150 200
1E-3
0.01
0.1
1
10
TC = 125oC
TC = 100oC
TC = 75oC
REVERSE CURRENT, IR [uA]
REVERSE VOLTAGE, VR [V]
TC = 25oC
0.1 1 10 100
0
100
200
300
400
500
600
JUNCTION CAPACITANCE, CJ [pF]
REVERSE VOLTAGE, VR [V]
f = 1MH z
100 200 300 400 500
25
30
35
40
45
50
55
60
65
70
TC = 125oC
TC = 75oC
REVERSE RECOVERY TIME, trr [ns]
di/dt, [A /µs]
TC = 25oC
IF = 30A
100 200 300 400 500
0
2
4
6
8
10
12
14
16
18
20
TC = 125oC
TC = 75oC
REVERSE RECOVERY CURRENT, Irr [A]
di/dt, [A/µs]
TC = 25oC
IF = 30 A
60 70 80 90 100 110 120 130 140 150
0
5
10
15
20
25
30
35
40
AVERAGE FORWARD CURRENT, IF(AV) [A]
CASE TEMPERATURE, TC [oC]
DC
©2009 Fairchild Semiconductor Corporation
FFPF30UP20ST Rev. A1
Mechanical Dimensions
Dimensions in Millimeters
TO-220F 2L Potting Type
4www.fairchildsemi.com
FFPF30UP20ST 30 A, 200 V, Ultrafast Diode
©2009 Fairchild Semiconductor Corporation
FFPF30UP20ST Rev. A1
5www.fairchildsemi.com
FFPF30UP20ST 30 A, 200 V, Ultrafast Diode
©2009 Fairchild Semiconductor Corporation
FFPF30UP20ST Rev. A1
